My Quote Request
No products added yet
5961-00-501-0772
20 Products
C11312-0002
TRANSISTOR
NSN, MFG P/N
5961005010772
NSN
5961-00-501-0772
MFG
ROSEMOUNT AEROSPACE LTD
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV2N3868
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/350
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/350 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM AND 1.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTER
Related Searches:
1289931PC14
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961005000303
NSN
5961-00-500-0303
1289931PC14
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961005000303
NSN
5961-00-500-0303
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.000 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 420.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: GERMANIUM
MOUNTING METHOD: BRACKET
OPERATING TEMP RANGE: 0.0 TO 55.0 DEG CELSIUS
OVERALL HEIGHT: 2.062 INCHES NOMINAL
OVERALL LENGTH: 5.130 INCHES NOMINAL
OVERALL WIDTH: 1.562 INCHES NOMINAL
SPECIAL FEATURES: TWO 0.147 IN.W BY 0.400 IN.LG SLOTS SPACED 4.730 IN.C TO C;LEAD TYPE:RESISTIVE AND INDUCTIVE;DC OUTPUT MAX VOLTAGE RATING:376.0 VOLTS
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
Related Searches:
4JA211CB2AD1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961005000303
NSN
5961-00-500-0303
4JA211CB2AD1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961005000303
NSN
5961-00-500-0303
MFG
GENERAL ELECTRIC CO
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.000 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 420.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: GERMANIUM
MOUNTING METHOD: BRACKET
OPERATING TEMP RANGE: 0.0 TO 55.0 DEG CELSIUS
OVERALL HEIGHT: 2.062 INCHES NOMINAL
OVERALL LENGTH: 5.130 INCHES NOMINAL
OVERALL WIDTH: 1.562 INCHES NOMINAL
SPECIAL FEATURES: TWO 0.147 IN.W BY 0.400 IN.LG SLOTS SPACED 4.730 IN.C TO C;LEAD TYPE:RESISTIVE AND INDUCTIVE;DC OUTPUT MAX VOLTAGE RATING:376.0 VOLTS
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
Related Searches:
9975995
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961005000303
NSN
5961-00-500-0303
9975995
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961005000303
NSN
5961-00-500-0303
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.000 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 420.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: GERMANIUM
MOUNTING METHOD: BRACKET
OPERATING TEMP RANGE: 0.0 TO 55.0 DEG CELSIUS
OVERALL HEIGHT: 2.062 INCHES NOMINAL
OVERALL LENGTH: 5.130 INCHES NOMINAL
OVERALL WIDTH: 1.562 INCHES NOMINAL
SPECIAL FEATURES: TWO 0.147 IN.W BY 0.400 IN.LG SLOTS SPACED 4.730 IN.C TO C;LEAD TYPE:RESISTIVE AND INDUCTIVE;DC OUTPUT MAX VOLTAGE RATING:376.0 VOLTS
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
Related Searches:
4JA211CD1AB5
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961005004105
NSN
5961-00-500-4105
4JA211CD1AB5
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961005004105
NSN
5961-00-500-4105
MFG
GENERAL ELECTRIC CO
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.75 AMPERES FORWARD CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 105.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 3 DOUBLER 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: BRACKET
OVERALL HEIGHT: 1.562 INCHES NOMINAL
OVERALL LENGTH: 4.730 INCHES NOMINAL
OVERALL WIDTH: 1.562 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
Related Searches:
1N3021A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005008675
NSN
5961-00-500-8675
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 23.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.225 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE2986 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.350 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 11.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
3371129
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005008675
NSN
5961-00-500-8675
MFG
ITT TELECOM PRODUCTS CORP NETWORK SYSTEMS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 23.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.225 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE2986 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.350 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 11.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
232106
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005009976
NSN
5961-00-500-9976
MFG
WOODWARD GOVERNOR COMPANY DBA INDUSTRIAL PRODUCTS GROUP DIV INDUSTRIAL PRODUCTS GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 3.30 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.125 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.430 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1800.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
151-1026-00
TRANSISTOR
NSN, MFG P/N
5961005010374
NSN
5961-00-501-0374
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
F2395
TRANSISTOR
NSN, MFG P/N
5961005010374
NSN
5961-00-501-0374
MFG
FEDERAL SIGNAL INTERNATIONAL FSC LTD DIV ELECTRICAL PRODUCTS
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
FN1230
TRANSISTOR
NSN, MFG P/N
5961005010374
NSN
5961-00-501-0374
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
U1863E
TRANSISTOR
NSN, MFG P/N
5961005010374
NSN
5961-00-501-0374
MFG
TELEDYNE TECHNOLOGIES INCORPORATED DBA TELEDYNE MICROELECTRONIC TECHNOLOGIES DIV MARINA DEL REY
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
353-3724-042
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005010508
NSN
5961-00-501-0508
353-3724-042
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005010508
NSN
5961-00-501-0508
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
S337
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005010508
NSN
5961-00-501-0508
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
S337GE
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005010508
NSN
5961-00-501-0508
MFG
GENERAL ELECTRIC CO LAMP REFRACTORY METALS PRODUCTS DEPT PRODUCTS OPNS
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
2N2978
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961005010656
NSN
5961-00-501-0656
2N2978
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961005010656
NSN
5961-00-501-0656
MFG
SOLID STATE DEVICES INC.
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FUNCTION FOR WHICH DESIGNED: AMPLIFIER
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-71
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: CLIP AND TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.095 INCHES MINIMUM AND 0.105 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECT
Related Searches:
SA2072
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961005010656
NSN
5961-00-501-0656
SA2072
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961005010656
NSN
5961-00-501-0656
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FUNCTION FOR WHICH DESIGNED: AMPLIFIER
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-71
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: CLIP AND TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.095 INCHES MINIMUM AND 0.105 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECT
Related Searches:
T067-501-0001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961005010656
NSN
5961-00-501-0656
T067-501-0001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961005010656
NSN
5961-00-501-0656
MFG
INTERSTATE ELECTRONICS CORPORATION
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FUNCTION FOR WHICH DESIGNED: AMPLIFIER
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-71
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: CLIP AND TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.095 INCHES MINIMUM AND 0.105 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECT
Related Searches:
352-7501-082
TRANSISTOR
NSN, MFG P/N
5961005010688
NSN
5961-00-501-0688
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 300.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
JANTXV2N3868
TRANSISTOR
NSN, MFG P/N
5961005010772
NSN
5961-00-501-0772
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV2N3868
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/350
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/350 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM AND 1.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTER
