Featured Products

My Quote Request

No products added yet

5961-01-267-3992

20 Products

1N1197AR

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012673992

NSN

5961-01-267-3992

View More Info

1N1197AR

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012673992

NSN

5961-01-267-3992

MFG

SEMICON COMPONENTS INC

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES NOMINAL FORWARD CURRENT, DC
FEATURES PROVIDED: REVERSE POLARITY
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 NOMINAL REVERSE VOLTAGE, DC

276-1151

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012673566

NSN

5961-01-267-3566

View More Info

276-1151

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012673566

NSN

5961-01-267-3566

MFG

TANDY LEATHER CORP RADIO SHACK CORP DIV

12043-0098

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012673567

NSN

5961-01-267-3567

View More Info

12043-0098

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012673567

NSN

5961-01-267-3567

MFG

RAYTHEON COMPANY DBA RAYTHEON

12043-0102

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012673568

NSN

5961-01-267-3568

View More Info

12043-0102

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012673568

NSN

5961-01-267-3568

MFG

RAYTHEON COMPANY DBA RAYTHEON

202227-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012673675

NSN

5961-01-267-3675

View More Info

202227-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012673675

NSN

5961-01-267-3675

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

OVERALL DIAMETER: 0.014 INCHES MAXIMUM
OVERALL LENGTH: 0.155 INCHES MAXIMUM

MA4E057ODS-186

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012673675

NSN

5961-01-267-3675

View More Info

MA4E057ODS-186

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012673675

NSN

5961-01-267-3675

MFG

M/A-COM MAC INC SUB OF M/A-COM INC

Description

OVERALL DIAMETER: 0.014 INCHES MAXIMUM
OVERALL LENGTH: 0.155 INCHES MAXIMUM

MA4E776

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012673675

NSN

5961-01-267-3675

View More Info

MA4E776

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012673675

NSN

5961-01-267-3675

MFG

M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM

Description

OVERALL DIAMETER: 0.014 INCHES MAXIMUM
OVERALL LENGTH: 0.155 INCHES MAXIMUM

324412

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012673676

NSN

5961-01-267-3676

View More Info

324412

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012673676

NSN

5961-01-267-3676

MFG

QES LTD QUALITY ELECTRONIC SERVICES

Description

CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL DIAMETER: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
OVERALL LENGTH: 1.438 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

75HQ045

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012673676

NSN

5961-01-267-3676

View More Info

75HQ045

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012673676

NSN

5961-01-267-3676

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL DIAMETER: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
OVERALL LENGTH: 1.438 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

MBR7535

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012673676

NSN

5961-01-267-3676

View More Info

MBR7535

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012673676

NSN

5961-01-267-3676

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL DIAMETER: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
OVERALL LENGTH: 1.438 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

SD-75

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012673676

NSN

5961-01-267-3676

View More Info

SD-75

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012673676

NSN

5961-01-267-3676

MFG

TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES

Description

CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL DIAMETER: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
OVERALL LENGTH: 1.438 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

USD545HR2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012673676

NSN

5961-01-267-3676

View More Info

USD545HR2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012673676

NSN

5961-01-267-3676

MFG

MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI

Description

CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL DIAMETER: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
OVERALL LENGTH: 1.438 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

JANTXV2N4856A

TRANSISTOR

NSN, MFG P/N

5961012673810

NSN

5961-01-267-3810

View More Info

JANTXV2N4856A

TRANSISTOR

NSN, MFG P/N

5961012673810

NSN

5961-01-267-3810

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

(NON-CORE DATA) DEPARTURE FROM CITED DOCUMENT: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
CRITICALITY CODE JUSTIFICATION: ZZZW
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV2N4856A
MANUFACTURERS CODE: 81349
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:

JANTXV2N5794A

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961012673811

NSN

5961-01-267-3811

View More Info

JANTXV2N5794A

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961012673811

NSN

5961-01-267-3811

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CRITICALITY CODE JUSTIFICATION: FEAT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV2N5794A
MANUFACTURERS CODE: 81349
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS

655-721

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961012673862

NSN

5961-01-267-3862

View More Info

655-721

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961012673862

NSN

5961-01-267-3862

MFG

MICRO USPD INC

804353-1

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961012673862

NSN

5961-01-267-3862

View More Info

804353-1

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961012673862

NSN

5961-01-267-3862

MFG

RAYTHEON COMPANY

SEN-B-474-1

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961012673862

NSN

5961-01-267-3862

View More Info

SEN-B-474-1

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961012673862

NSN

5961-01-267-3862

MFG

RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR

805933-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012673863

NSN

5961-01-267-3863

View More Info

805933-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012673863

NSN

5961-01-267-3863

MFG

RAYTHEON COMPANY

S5187

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012673863

NSN

5961-01-267-3863

View More Info

S5187

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012673863

NSN

5961-01-267-3863

MFG

SEMICON COMPONENTS INC

UTG5164

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012673863

NSN

5961-01-267-3863

View More Info

UTG5164

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012673863

NSN

5961-01-267-3863

MFG

MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI