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5961-01-260-1715
20 Products
586378-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012601715
NSN
5961-01-260-1715
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1033519-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012601716
NSN
5961-01-260-1716
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1036896-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012601717
NSN
5961-01-260-1717
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
ICTE-5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012601717
NSN
5961-01-260-1717
MFG
GENERAL SEMICONDUCTOR INDUSTRIES INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
NTE4900
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012601717
NSN
5961-01-260-1717
MFG
NTE ELECTRONICS INC SUB OF SOLID STATE INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
SICTE-5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012601717
NSN
5961-01-260-1717
MFG
SEMICON COMPONENTS INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
587306-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012601718
NSN
5961-01-260-1718
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.109 INCHES MINIMUM AND 0.125 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
SEN-R-111
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012601718
NSN
5961-01-260-1718
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.109 INCHES MINIMUM AND 0.125 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
SS2994
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012601718
NSN
5961-01-260-1718
MFG
SEMTECH CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.109 INCHES MINIMUM AND 0.125 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
704AS9985
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012601877
NSN
5961-01-260-1877
MFG
NAVAL AIR SYSTEMS COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.042 INCHES MAXIMUM
OVERALL LENGTH: 0.204 INCHES MAXIMUM
OVERALL WIDTH: 0.204 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.160 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.5 MAXIMUM FORWARD VOLTAGE, DC
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0
Related Searches:
899985-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012601877
NSN
5961-01-260-1877
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.042 INCHES MAXIMUM
OVERALL LENGTH: 0.204 INCHES MAXIMUM
OVERALL WIDTH: 0.204 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.160 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.5 MAXIMUM FORWARD VOLTAGE, DC
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0
Related Searches:
MA4E034
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012601877
NSN
5961-01-260-1877
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.042 INCHES MAXIMUM
OVERALL LENGTH: 0.204 INCHES MAXIMUM
OVERALL WIDTH: 0.204 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.160 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.5 MAXIMUM FORWARD VOLTAGE, DC
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0
Related Searches:
M14970-A
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012602232
NSN
5961-01-260-2232
M14970-A
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012602232
NSN
5961-01-260-2232
MFG
LINCOLN ELECTRIC HOLDINGS INC.
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
5-4906-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012602327
NSN
5961-01-260-2327
5-4906-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012602327
NSN
5961-01-260-2327
MFG
ATEC INC .
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
2N6965
TRANSISTOR
NSN, MFG P/N
5961012602443
NSN
5961-01-260-2443
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
III END ITEM IDENTIFICATION: F-15 ACFT
Related Searches:
H980039-002B
TRANSISTOR
NSN, MFG P/N
5961012602443
NSN
5961-01-260-2443
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
III END ITEM IDENTIFICATION: F-15 ACFT
Related Searches:
IXTS1034
TRANSISTOR
NSN, MFG P/N
5961012602443
NSN
5961-01-260-2443
MFG
IXYS CORPORATION
Description
III END ITEM IDENTIFICATION: F-15 ACFT
Related Searches:
V-12079
TRANSISTOR
NSN, MFG P/N
5961012602443
NSN
5961-01-260-2443
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
III END ITEM IDENTIFICATION: F-15 ACFT
Related Searches:
LM394H
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012602454
NSN
5961-01-260-2454
LM394H
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012602454
NSN
5961-01-260-2454
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC ALL TRANSISTOR
Related Searches:
7916441-03
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012602495
NSN
5961-01-260-2495
7916441-03
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012602495
NSN
5961-01-260-2495
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 1.144 INCHES MAXIMUM
OVERALL LENGTH: 1.144 INCHES MAXIMUM
OVERALL WIDTH: 0.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 TURRET
