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5961-01-302-4142
20 Products
647916-901
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013024142
NSN
5961-01-302-4142
647916-901
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013024142
NSN
5961-01-302-4142
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
III END ITEM IDENTIFICATION: RADIO SET,AN/ARC-18
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 37695-647916 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, AVERAGE
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FBN-L-217
TRANSISTOR
NSN, MFG P/N
5961013023928
NSN
5961-01-302-3928
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
TRANSISTOR
Related Searches:
FBN-L-218
TRANSISTOR
NSN, MFG P/N
5961013023929
NSN
5961-01-302-3929
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
TRANSISTOR
Related Searches:
MT6006
TRANSISTOR
NSN, MFG P/N
5961013023930
NSN
5961-01-302-3930
MFG
POWER TECH INC
Description
TRANSISTOR
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DDA6248-98
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013023931
NSN
5961-01-302-3931
DDA6248-98
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013023931
NSN
5961-01-302-3931
MFG
SKYWORKS SOLUTIONS INC.
Description
SEMICONDUCTOR DEVICE,DIODE
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F1N5418
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013023932
NSN
5961-01-302-3932
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
SEMICONDUCTOR DEVICE,DIODE
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FBL-00-203
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013023933
NSN
5961-01-302-3933
FBL-00-203
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013023933
NSN
5961-01-302-3933
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
FBM-26-165
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013023934
NSN
5961-01-302-3934
FBM-26-165
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013023934
NSN
5961-01-302-3934
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
143 201 119
TRANSISTOR
NSN, MFG P/N
5961013024130
NSN
5961-01-302-4130
MFG
EATON CORPORATION
Description
TRANSISTOR
Related Searches:
91617417
TRANSISTOR
NSN, MFG P/N
5961013024130
NSN
5961-01-302-4130
MFG
THALES
Description
TRANSISTOR
Related Searches:
MJE5852
TRANSISTOR
NSN, MFG P/N
5961013024130
NSN
5961-01-302-4130
MFG
STMICROELECTRONICS SA
Description
TRANSISTOR
Related Searches:
MSC82005
TRANSISTOR
NSN, MFG P/N
5961013024131
NSN
5961-01-302-4131
MFG
STMICROELECTRONICS INC
Description
CURRENT RATING PER CHARACTERISTIC: 2.50 AMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.740 INCHES MINIMUM
OVERALL LENGTH: 0.810 INCHES MAXIMUM
OVERALL WIDTH: 0.187 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MINIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN
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11DQ06
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013024132
NSN
5961-01-302-4132
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES NOMINAL PEAK POINT CURRENT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-204AL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 128.0 DEG CELSIUS AMBIENT AIR
OVERALL DIAMETER: 0.094 INCHES NOMINAL
OVERALL LENGTH: 0.182 INCHES NOMINAL
TERMINAL LENGTH: 1.100 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
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254-0702
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013024132
NSN
5961-01-302-4132
MFG
RADIOSPARES SAS
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES NOMINAL PEAK POINT CURRENT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-204AL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 128.0 DEG CELSIUS AMBIENT AIR
OVERALL DIAMETER: 0.094 INCHES NOMINAL
OVERALL LENGTH: 0.182 INCHES NOMINAL
TERMINAL LENGTH: 1.100 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
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BZX55C3V3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013024134
NSN
5961-01-302-4134
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 115.00 MICROAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.075 INCHES NOMINAL
OVERALL LENGTH: 0.160 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.1 MINIMUM NOMINAL REGULATOR VOLTAGE AND 3.5 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
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BZX85-C5V1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013024135
NSN
5961-01-302-4135
BZX85-C5V1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013024135
NSN
5961-01-302-4135
MFG
ITT SEMICONDUCTORS A DIVISION OF INTERNATIONAL TELEPHONE AND TELEGRAPH CORP
Description
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-41
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 25.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 2.5 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.9 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.3 WATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.8 MILLIMETERS NOMINAL
TERMINAL LENGTH: 28.0 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.8 MINIMUM NOMINAL REGULATOR VOLTAGE AND 5.4 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
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BZX85-C18
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013024137
NSN
5961-01-302-4137
MFG
ITT SEMICONDUCTORS A DIVISION OF INTERNATIONAL TELEPHONE AND TELEGRAPH CORP
Description
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-41
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 25.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 2.5 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.9 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.3 WATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.8 MILLIMETERS NOMINAL
TERMINAL LENGTH: 28.0 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 16.8 MINIMUM NOMINAL REGULATOR VOLTAGE AND 19.1 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
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BZX85-C-30
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013024138
NSN
5961-01-302-4138
BZX85-C-30
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013024138
NSN
5961-01-302-4138
MFG
ITT SEMICONDUCTORS A DIVISION OF INTERNATIONAL TELEPHONE AND TELEGRAPH CORP
Description
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-41
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 25.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 2.5 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.9 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.3 WATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.8 MILLIMETERS NOMINAL
TERMINAL LENGTH: 28.0 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 28.0 MINIMUM NOMINAL REGULATOR VOLTAGE AND 32.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
BZX55-C6V8
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013024140
NSN
5961-01-302-4140
BZX55-C6V8
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013024140
NSN
5961-01-302-4140
MFG
ITT SEMICONDUCTORS A DIVISION OF INTERNATIONAL TELEPHONE AND TELEGRAPH CORP
Description
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 25.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 1.58 MILLIMETERS MAXIMUM
OVERALL LENGTH: 4.05 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.5 MILLIMETERS NOMINAL
TERMINAL LENGTH: 26.0 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.4 MINIMUM NOMINAL REGULATOR VOLTAGE AND 7.2 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
BZX55C6V8
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013024140
NSN
5961-01-302-4140
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 25.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 1.58 MILLIMETERS MAXIMUM
OVERALL LENGTH: 4.05 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.5 MILLIMETERS NOMINAL
TERMINAL LENGTH: 26.0 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.4 MINIMUM NOMINAL REGULATOR VOLTAGE AND 7.2 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
