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5961-01-455-2399

20 Products

7579631-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014552399

NSN

5961-01-455-2399

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7579631-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014552399

NSN

5961-01-455-2399

MFG

GENERAL DYNAMICS LAND SYSTEMS INC . DBA WOODBRIDGE TECHNICAL CENTER DIV GENERAL DYNAMICS LAND SYSTEMS INC-WOODBRIDGE TECHNICAL CENTE

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 37.0 NOMINAL NOMINAL REGULATOR VOLTAGE

SD10964

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014549829

NSN

5961-01-454-9829

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SD10964

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014549829

NSN

5961-01-454-9829

MFG

SOLITRON DEVICES INC.

SEN-2746C

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014549829

NSN

5961-01-454-9829

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SEN-2746C

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014549829

NSN

5961-01-454-9829

MFG

RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR

SEN2746C

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014549829

NSN

5961-01-454-9829

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SEN2746C

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014549829

NSN

5961-01-454-9829

MFG

MICROSEMI CORP. - MASSACHUSETTS DBA MICROSEMI-LAWRENCE DIV MICROSEMI CORPORATION

A3188158-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014549850

NSN

5961-01-454-9850

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A3188158-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014549850

NSN

5961-01-454-9850

MFG

US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR

Description

III END ITEM IDENTIFICATION: NSN 5895-01-381-1056 E/I CAGE 80058
INCLOSURE MATERIAL: METAL
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN

A3188150-001

TRANSISTOR

NSN, MFG P/N

5961014549921

NSN

5961-01-454-9921

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A3188150-001

TRANSISTOR

NSN, MFG P/N

5961014549921

NSN

5961-01-454-9921

MFG

US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR

Description

III END ITEM IDENTIFICATION: NSN 5895-01-381-1056 E/I CAGE 80058

SL2364C

TRANSISTOR

NSN, MFG P/N

5961014549921

NSN

5961-01-454-9921

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SL2364C

TRANSISTOR

NSN, MFG P/N

5961014549921

NSN

5961-01-454-9921

MFG

MITEL SEMICONDUCTOR AMERICANS INC

Description

III END ITEM IDENTIFICATION: NSN 5895-01-381-1056 E/I CAGE 80058

A3188160-001

TRANSISTOR

NSN, MFG P/N

5961014549996

NSN

5961-01-454-9996

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A3188160-001

TRANSISTOR

NSN, MFG P/N

5961014549996

NSN

5961-01-454-9996

MFG

US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR

Description

III END ITEM IDENTIFICATION: NSN 5895-01-381-1056 E/I CAGE 80058

NE243187

TRANSISTOR

NSN, MFG P/N

5961014549996

NSN

5961-01-454-9996

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NE243187

TRANSISTOR

NSN, MFG P/N

5961014549996

NSN

5961-01-454-9996

MFG

CALIFORNIA EASTERN LABS

Description

III END ITEM IDENTIFICATION: NSN 5895-01-381-1056 E/I CAGE 80058

A3188156-001

TRANSISTOR

NSN, MFG P/N

5961014550000

NSN

5961-01-455-0000

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A3188156-001

TRANSISTOR

NSN, MFG P/N

5961014550000

NSN

5961-01-455-0000

MFG

US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR

Description

III END ITEM IDENTIFICATION: NSN 5895-01-381-1056 E/I CAGE 80058
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.1102 INCHES MINIMUM AND 0.1191 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 SOLDER STUD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED AND 75.0 MAXIMUM COLLECTOR-TO-BASE VOLTAGE, INSTANTANEOUS AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

SKB33-12

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014550153

NSN

5961-01-455-0153

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SKB33-12

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014550153

NSN

5961-01-455-0153

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

CURRENT RATING PER CHARACTERISTIC: 33.00 AMPERES MAXIMUM ON-STATE CURRENT, DC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.2 MAXIMUM OFF-STATE VOLTAGE, PEAK

JANTX1N3042

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014550554

NSN

5961-01-455-0554

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JANTX1N3042

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014550554

NSN

5961-01-455-0554

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 11.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N3042B-1
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/115
OVERALL DIAMETER: 0.080 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/115 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 82.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VO

936A918

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014550633

NSN

5961-01-455-0633

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936A918

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014550633

NSN

5961-01-455-0633

MFG

SUNDSTRAND CORP

936A921

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014550633

NSN

5961-01-455-0633

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936A921

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014550633

NSN

5961-01-455-0633

MFG

HAMILTON SUNDSTRAND CORPORATION

NH936A921

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014550633

NSN

5961-01-455-0633

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NH936A921

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014550633

NSN

5961-01-455-0633

MFG

DLA LAND AND MARITIME

OM11685SCX

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014550633

NSN

5961-01-455-0633

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OM11685SCX

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014550633

NSN

5961-01-455-0633

MFG

INTERNATIONAL RECTIFIER CORPORATION DIV HI-REL

SD10963

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014550633

NSN

5961-01-455-0633

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SD10963

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014550633

NSN

5961-01-455-0633

MFG

SOLITRON DEVICES INC.

SEN-2747C

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014550633

NSN

5961-01-455-0633

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SEN-2747C

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014550633

NSN

5961-01-455-0633

MFG

RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR

SEN2747C

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014550633

NSN

5961-01-455-0633

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SEN2747C

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014550633

NSN

5961-01-455-0633

MFG

MICROSEMI CORP. - MASSACHUSETTS DBA MICROSEMI-LAWRENCE DIV MICROSEMI CORPORATION

1N23WE

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014552397

NSN

5961-01-455-2397

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1N23WE

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014552397

NSN

5961-01-455-2397

MFG

SPACE POWER ELECTRONICS INC

Description

SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: FREQUENCY BAND -X: NOISE FIGURE MAX (DB) - 7.5
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.3 MAXIMUM REGULATOR VOLTAGE