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5961-00-843-6883
20 Products
10151
TRANSISTOR
NSN, MFG P/N
5961008436883
NSN
5961-00-843-6883
MFG
ASTRONAUTICS CORPORATION OF AMERICA
Description
CURRENT RATING PER CHARACTERISTIC: 0.500 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN AND 1.000 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, BASE OPEN
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N336
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/37
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/37 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERM
Related Searches:
353-1159-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008435177
NSN
5961-00-843-5177
353-1159-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008435177
NSN
5961-00-843-5177
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N2986B
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/124
OVERALL DIAMETER: 0.437 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MINIMUM AND 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.423 INCHES MINIMUM AND 0.438 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/124 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STU
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7900260-27
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008435177
NSN
5961-00-843-5177
7900260-27
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008435177
NSN
5961-00-843-5177
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N2986B
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/124
OVERALL DIAMETER: 0.437 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MINIMUM AND 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.423 INCHES MINIMUM AND 0.438 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/124 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STU
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008435177
NSN
5961-00-843-5177
MFG
MITCHELL CAMERA CORP
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N2986B
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/124
OVERALL DIAMETER: 0.437 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MINIMUM AND 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.423 INCHES MINIMUM AND 0.438 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/124 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STU
Related Searches:
JAN1N2986B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008435177
NSN
5961-00-843-5177
JAN1N2986B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008435177
NSN
5961-00-843-5177
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N2986B
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/124
OVERALL DIAMETER: 0.437 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MINIMUM AND 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.423 INCHES MINIMUM AND 0.438 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/124 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STU
Related Searches:
JAN1N2986BA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008435177
NSN
5961-00-843-5177
JAN1N2986BA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008435177
NSN
5961-00-843-5177
MFG
ADELCO ELEKTRONIK GMBH
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N2986B
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/124
OVERALL DIAMETER: 0.437 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MINIMUM AND 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.423 INCHES MINIMUM AND 0.438 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/124 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STU
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WW6695-37
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008435177
NSN
5961-00-843-5177
MFG
GTE COMMUNICATION SYSTEMS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N2986B
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/124
OVERALL DIAMETER: 0.437 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MINIMUM AND 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.423 INCHES MINIMUM AND 0.438 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/124 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STU
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1N1738A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008435422
NSN
5961-00-843-5422
MFG
NAVCOM DEFENSE ELECTRONICS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 7.50 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.615 INCHES MINIMUM AND 0.635 INCHES MAXIMUM
OVERALL LENGTH: 0.622 INCHES MINIMUM AND 0.628 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3092 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.125 INCHES MINIMUM AND 1.375 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 24.8 MAXIMUM NOMINAL REGULATOR VOLTAGE
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RELEASE3092
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008435422
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5961-00-843-5422
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008435422
NSN
5961-00-843-5422
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 7.50 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.615 INCHES MINIMUM AND 0.635 INCHES MAXIMUM
OVERALL LENGTH: 0.622 INCHES MINIMUM AND 0.628 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3092 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.125 INCHES MINIMUM AND 1.375 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 24.8 MAXIMUM NOMINAL REGULATOR VOLTAGE
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36978
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008435972
NSN
5961-00-843-5972
MFG
UNISON INDUSTRIES LLC
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.500 INCHES NOMINAL
OVERALL LENGTH: 1.000 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.188 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 TURRET
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4000.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008435972
NSN
5961-00-843-5972
MFG
ELECTRONIC DEVICES INC DBA E D I
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.500 INCHES NOMINAL
OVERALL LENGTH: 1.000 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.188 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 TURRET
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4000.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
PD5972
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008435972
NSN
5961-00-843-5972
MFG
PD & E ELECTRONICS LLC
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.500 INCHES NOMINAL
OVERALL LENGTH: 1.000 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.188 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 TURRET
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4000.0 MAXIMUM REVERSE VOLTAGE, PEAK
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PS1715
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008435972
NSN
5961-00-843-5972
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.500 INCHES NOMINAL
OVERALL LENGTH: 1.000 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.188 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 TURRET
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4000.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
SES491
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008435972
NSN
5961-00-843-5972
MFG
SEMITRONICS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.500 INCHES NOMINAL
OVERALL LENGTH: 1.000 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.188 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 TURRET
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4000.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
SLD4GL
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008435972
NSN
5961-00-843-5972
MFG
MICROSEMI CORP RPM MICRO DIV
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.500 INCHES NOMINAL
OVERALL LENGTH: 1.000 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.188 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 TURRET
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4000.0 MAXIMUM REVERSE VOLTAGE, PEAK
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2088262-0021
TRANSISTOR
NSN, MFG P/N
5961008436883
NSN
5961-00-843-6883
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL
Description
CURRENT RATING PER CHARACTERISTIC: 0.500 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN AND 1.000 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, BASE OPEN
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N336
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/37
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/37 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERM
Related Searches:
2N336
TRANSISTOR
NSN, MFG P/N
5961008436883
NSN
5961-00-843-6883
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
CURRENT RATING PER CHARACTERISTIC: 0.500 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN AND 1.000 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, BASE OPEN
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N336
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/37
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/37 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERM
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4192800-136
TRANSISTOR
NSN, MFG P/N
5961008436883
NSN
5961-00-843-6883
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 0.500 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN AND 1.000 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, BASE OPEN
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N336
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/37
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/37 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERM
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466407-4
TRANSISTOR
NSN, MFG P/N
5961008436883
NSN
5961-00-843-6883
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-MINNEAPOLIS
Description
CURRENT RATING PER CHARACTERISTIC: 0.500 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN AND 1.000 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, BASE OPEN
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N336
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/37
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/37 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERM
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6854K90P005
TRANSISTOR
NSN, MFG P/N
5961008436883
NSN
5961-00-843-6883
MFG
AMETEK INC. D IV AEROSPACE & DEFENSE
Description
CURRENT RATING PER CHARACTERISTIC: 0.500 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN AND 1.000 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, BASE OPEN
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N336
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/37
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/37 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERM
