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5961-01-308-3322
20 Products
20-01134-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013083322
NSN
5961-01-308-3322
20-01134-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013083322
NSN
5961-01-308-3322
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
20-01214-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013083323
NSN
5961-01-308-3323
20-01214-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013083323
NSN
5961-01-308-3323
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
20-01213-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013083324
NSN
5961-01-308-3324
20-01213-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013083324
NSN
5961-01-308-3324
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
20-01181-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013083325
NSN
5961-01-308-3325
20-01181-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013083325
NSN
5961-01-308-3325
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
20-01155-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013083326
NSN
5961-01-308-3326
20-01155-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013083326
NSN
5961-01-308-3326
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
42-13348
TRANSISTOR
NSN, MFG P/N
5961013084002
NSN
5961-01-308-4002
MFG
HYDRO-AIRE INC.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: AIRCRAFT, GALAXY C-5
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
Related Searches:
619102-902
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013084115
NSN
5961-01-308-4115
619102-902
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013084115
NSN
5961-01-308-4115
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
DESIGN CONTROL REFERENCE: 619102-902
MANUFACTURERS CODE: 37695
OVERALL LENGTH: 1.112 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:
Related Searches:
08F-130
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013084116
NSN
5961-01-308-4116
MFG
RAPID POWER TECHNOLOGIES INC
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 300.00 AMPERES NOMINAL FORWARD CURRENT, AVERAGE
III END ITEM IDENTIFICATION: TRIDENT HULL STRUCTURE; SUBMARINE AUXILLARY AND MISCELLANEOPUS SYSTEMS; SHIP, OHIO CLASS SSN (TSRIDENT)
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-9
MANUFACTURERS CODE: 52151
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 170-0091
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL LENGTH: 2.906 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 1.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 INSULATED WIRE LEAD W/TERMINAL LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1600.0 NOMINAL REPETITIVE
Related Searches:
170-0091
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013084116
NSN
5961-01-308-4116
MFG
CONTINENTAL ELECTRONICS CORPORATION
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 300.00 AMPERES NOMINAL FORWARD CURRENT, AVERAGE
III END ITEM IDENTIFICATION: TRIDENT HULL STRUCTURE; SUBMARINE AUXILLARY AND MISCELLANEOPUS SYSTEMS; SHIP, OHIO CLASS SSN (TSRIDENT)
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-9
MANUFACTURERS CODE: 52151
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 170-0091
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL LENGTH: 2.906 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 1.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 INSULATED WIRE LEAD W/TERMINAL LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1600.0 NOMINAL REPETITIVE
Related Searches:
301U160
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013084116
NSN
5961-01-308-4116
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 300.00 AMPERES NOMINAL FORWARD CURRENT, AVERAGE
III END ITEM IDENTIFICATION: TRIDENT HULL STRUCTURE; SUBMARINE AUXILLARY AND MISCELLANEOPUS SYSTEMS; SHIP, OHIO CLASS SSN (TSRIDENT)
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-9
MANUFACTURERS CODE: 52151
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 170-0091
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL LENGTH: 2.906 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 1.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 INSULATED WIRE LEAD W/TERMINAL LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1600.0 NOMINAL REPETITIVE
Related Searches:
JANTXV2N3421S
TRANSISTOR
NSN, MFG P/N
5961013084895
NSN
5961-01-308-4895
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES NOMINAL COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV2N3421S
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/393
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 125.0 NOMINAL COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 NOMINAL COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 8.0 NOMINAL EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
400-9427-344
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013086113
NSN
5961-01-308-6113
400-9427-344
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013086113
NSN
5961-01-308-6113
MFG
GENISCO TECHNOLOGY CORPORATION
Description
DESIGN CONTROL REFERENCE: 400-9427-344
III END ITEM IDENTIFICATION: FIRE CONTROL SYS
MANUFACTURERS CODE: 96682
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SPECIAL TEST FEATURES: NAVORD OD36190
THE MANUFACTURERS DATA:
Related Searches:
400-9427-343
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013086114
NSN
5961-01-308-6114
400-9427-343
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013086114
NSN
5961-01-308-6114
MFG
GENISCO TECHNOLOGY CORPORATION
Description
DESIGN CONTROL REFERENCE: 400-9427-343
III END ITEM IDENTIFICATION: FIRE CONTROL SYS
MANUFACTURERS CODE: 96682
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SPECIAL TEST FEATURES: NAVORD OD36190
THE MANUFACTURERS DATA:
Related Searches:
400-9427-341
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013086115
NSN
5961-01-308-6115
400-9427-341
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013086115
NSN
5961-01-308-6115
MFG
GENISCO TECHNOLOGY CORPORATION
Description
DESIGN CONTROL REFERENCE: 400-9427-341
III END ITEM IDENTIFICATION: FIRE CONTROL SYS
MANUFACTURERS CODE: 96682
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SPECIAL TEST FEATURES: NAVORD OD36190
THE MANUFACTURERS DATA:
Related Searches:
45XV246
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013086274
NSN
5961-01-308-6274
45XV246
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013086274
NSN
5961-01-308-6274
MFG
CONDITIONING SEMICONDUCTOR DEVICES CORP /CSDC/
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.20 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 50.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15000.0 REVERSE VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: A3 DOUBLER 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: SLOT
OPERATING TEMP RANGE: -30.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 1.320 INCHES MAXIMUM
OVERALL LENGTH: 6.100 INCHES NOMINAL
OVERALL WIDTH: 0.630 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
Related Searches:
EG-200
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013086336
NSN
5961-01-308-6336
MFG
ELECTRONIC DEVICES INC DBA E D I
Description
CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.160 INCHES MAXIMUM
OVERALL LENGTH: 0.380 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2000.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
1902-0970
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013086337
NSN
5961-01-308-6337
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM COLLECTOR CURRENT, INSTANTANEOUS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 33.0 MAXIMUM BREAKDOWN VOLTAGE, DC
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
DZ790424B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013086337
NSN
5961-01-308-6337
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM COLLECTOR CURRENT, INSTANTANEOUS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 33.0 MAXIMUM BREAKDOWN VOLTAGE, DC
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
SZ30035-028
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013086337
NSN
5961-01-308-6337
SZ30035-028
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013086337
NSN
5961-01-308-6337
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM COLLECTOR CURRENT, INSTANTANEOUS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 33.0 MAXIMUM BREAKDOWN VOLTAGE, DC
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
JAN1N5772
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013086670
NSN
5961-01-308-6670
JAN1N5772
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013086670
NSN
5961-01-308-6670
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
COMPONENT NAME AND QUANTITY: 8 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 50-HZ CYCLE ALL SEMICONDUCTOR DEVICE DIODE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5772
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/474
OVERALL HEIGHT: 0.030 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.290 INCHES MAXIMUM
OVERALL WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/474 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.010 INCHES MINIMUM AND 0.019 INCHES MAXIMUM
TERMINAL LENGTH: 0.240 INCHES MINIMUM AND 0.370 INCHES MAXIMUM_!
