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5961-01-345-1719
20 Products
1N5323B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013451719
NSN
5961-01-345-1719
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
715
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013451719
NSN
5961-01-345-1719
MFG
FREESCALE SEMICONDUCTOR INC.
Description
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
MBR6035PF
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013451942
NSN
5961-01-345-1942
MFG
FREESCALE SEMICONDUCTOR INC.
Description
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-21
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
JANTX1N4117-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013452585
NSN
5961-01-345-2585
JANTX1N4117-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013452585
NSN
5961-01-345-2585
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4117-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/435
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM AVERAGE ON-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/435 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 IN
Related Searches:
JANTXV2N2329S
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013452586
NSN
5961-01-345-2586
JANTXV2N2329S
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013452586
NSN
5961-01-345-2586
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV2N2329S
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TXV
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNPN
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500-276
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/276 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LE
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135003PC126
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013452756
NSN
5961-01-345-2756
135003PC126
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013452756
NSN
5961-01-345-2756
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MISSILES AND FIRE CONTROL - ARCHBALD
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 135194-1
MANUFACTURERS CODE: 94271
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
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2N3098
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013452756
NSN
5961-01-345-2756
2N3098
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013452756
NSN
5961-01-345-2756
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 135194-1
MANUFACTURERS CODE: 94271
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
135003PC146
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013453268
NSN
5961-01-345-3268
135003PC146
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013453268
NSN
5961-01-345-3268
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MISSILES AND FIRE CONTROL - ARCHBALD
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 135393-1
MANUFACTURERS CODE: 94271
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
135003PC144
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013453269
NSN
5961-01-345-3269
135003PC144
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013453269
NSN
5961-01-345-3269
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MISSILES AND FIRE CONTROL - ARCHBALD
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 135391-1
MANUFACTURERS CODE: 94271
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
135003PC145
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013453270
NSN
5961-01-345-3270
135003PC145
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013453270
NSN
5961-01-345-3270
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MISSILES AND FIRE CONTROL - ARCHBALD
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 135392-1
MANUFACTURERS CODE: 94271
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
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143126015
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013454232
NSN
5961-01-345-4232
MFG
EATON CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: COMMUNICATION RESTORAL SYSTEM AN/TSC-115
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 1.610 INCHES NOMINAL
OVERALL LENGTH: 0.520 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
100JB8L
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013454273
NSN
5961-01-345-4273
100JB8L
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013454273
NSN
5961-01-345-4273
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 130.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 REPETITIVE PEAK REVERSE VOLTAGE AND 900.0 NONREPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OPERATING TEMP RANGE: -40.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.800 INCHES MINIMUM AND 0.850 INCHES MAXIMUM
OVERALL LENGTH: 1.120 INCHES NOMINAL
OVERALL WIDTH: 1.120 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 QUICK DISCONNECT, MALE
Related Searches:
1097C822
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013454939
NSN
5961-01-345-4939
1097C822
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013454939
NSN
5961-01-345-4939
MFG
PEERLESS INSTRUMENT CO. INC.
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 1097C822
MANUFACTURERS CODE: 95210
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: REFERENCE NUMBER DIFFERENTIATING MATERIAL WILL BE IN ACCORDANCE WITH NAVAL INVENTORY CONTROL POINT ACTIVITY HX QUALITY CONTROL. MANUFACTURING AND TESTING SPECIFICATIONS AVAILABLE AT THE DLA ICP.
SPECIAL FEATURES: ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE SUPPLY CENTER COLUMBUS PRODUCTION STANDARD NO. LO4417
THE MANUFACTURERS DATA:
Related Searches:
LO4417
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013454939
NSN
5961-01-345-4939
MFG
DLA LAND AND MARITIME
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 1097C822
MANUFACTURERS CODE: 95210
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: REFERENCE NUMBER DIFFERENTIATING MATERIAL WILL BE IN ACCORDANCE WITH NAVAL INVENTORY CONTROL POINT ACTIVITY HX QUALITY CONTROL. MANUFACTURING AND TESTING SPECIFICATIONS AVAILABLE AT THE DLA ICP.
SPECIAL FEATURES: ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE SUPPLY CENTER COLUMBUS PRODUCTION STANDARD NO. LO4417
THE MANUFACTURERS DATA:
Related Searches:
5905537
TRANSISTOR
NSN, MFG P/N
5961013455032
NSN
5961-01-345-5032
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: -6.50 AMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -100.0 MAXIMUM DRAIN TO GATE VOLTAGE AND -100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
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94-1499
TRANSISTOR
NSN, MFG P/N
5961013455032
NSN
5961-01-345-5032
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: -6.50 AMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -100.0 MAXIMUM DRAIN TO GATE VOLTAGE AND -100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
NH5905537
TRANSISTOR
NSN, MFG P/N
5961013455032
NSN
5961-01-345-5032
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: -6.50 AMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -100.0 MAXIMUM DRAIN TO GATE VOLTAGE AND -100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
7907952-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013455033
NSN
5961-01-345-5033
7907952-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013455033
NSN
5961-01-345-5033
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-41
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.080 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 0.5 MAXIMUM FORWARD VOLTAGE, AVERAGE
Related Searches:
CSB5817
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013455033
NSN
5961-01-345-5033
MFG
COMPENSATED DEVICES INC
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-41
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.080 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 0.5 MAXIMUM FORWARD VOLTAGE, AVERAGE
Related Searches:
SPDX5818
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013455033
NSN
5961-01-345-5033
MFG
SOLID STATE DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-41
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.080 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 0.5 MAXIMUM FORWARD VOLTAGE, AVERAGE
