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5961-01-362-7664
20 Products
14006-0033
TRANSISTOR
NSN, MFG P/N
5961013627664
NSN
5961-01-362-7664
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL
Description
TRANSISTOR
Related Searches:
12051239-0001
TRANSISTOR
NSN, MFG P/N
5961013627665
NSN
5961-01-362-7665
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL
Description
TRANSISTOR
Related Searches:
12040-0036
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013627666
NSN
5961-01-362-7666
12040-0036
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013627666
NSN
5961-01-362-7666
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
12040-0038
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013627667
NSN
5961-01-362-7667
12040-0038
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013627667
NSN
5961-01-362-7667
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
12040-0049
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013627668
NSN
5961-01-362-7668
12040-0049
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013627668
NSN
5961-01-362-7668
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
12042-0067
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013627669
NSN
5961-01-362-7669
12042-0067
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013627669
NSN
5961-01-362-7669
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
12042-0074
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013627670
NSN
5961-01-362-7670
12042-0074
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013627670
NSN
5961-01-362-7670
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
12042-0079
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013627671
NSN
5961-01-362-7671
12042-0079
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013627671
NSN
5961-01-362-7671
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
12042-0080
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013627672
NSN
5961-01-362-7672
12042-0080
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013627672
NSN
5961-01-362-7672
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
12042-0081
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013627673
NSN
5961-01-362-7673
12042-0081
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013627673
NSN
5961-01-362-7673
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
12043-0036
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013627674
NSN
5961-01-362-7674
12043-0036
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013627674
NSN
5961-01-362-7674
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
754597
TRANSISTOR
NSN, MFG P/N
5961013628025
NSN
5961-01-362-8025
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
TRANSISTOR
Related Searches:
NH754597
TRANSISTOR
NSN, MFG P/N
5961013628025
NSN
5961-01-362-8025
MFG
DLA LAND AND MARITIME
Description
TRANSISTOR
Related Searches:
754598
TRANSISTOR
NSN, MFG P/N
5961013628027
NSN
5961-01-362-8027
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
TRANSISTOR
Related Searches:
NH754598
TRANSISTOR
NSN, MFG P/N
5961013628027
NSN
5961-01-362-8027
MFG
DLA LAND AND MARITIME
Description
TRANSISTOR
Related Searches:
91708862
TRANSISTOR
NSN, MFG P/N
5961013628028
NSN
5961-01-362-8028
MFG
THALES
Description
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
IRFY440
TRANSISTOR
NSN, MFG P/N
5961013628028
NSN
5961-01-362-8028
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
2PF140
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013628029
NSN
5961-01-362-8029
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
OVERALL DIAMETER: 0.177 INCHES MAXIMUM
OVERALL LENGTH: 0.374 INCHES MAXIMUM
TERMINAL LENGTH: 1.020 INCHES MINIMUM
Related Searches:
MTP2N85
TRANSISTOR
NSN, MFG P/N
5961013628372
NSN
5961-01-362-8372
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 3.56 MILLIMETERS MINIMUM AND 4.82 MILLIMETERS MAXIMUM
OVERALL LENGTH: 14.23 MILLIMETERS MINIMUM AND 16.51 MILLIMETERS MAXIMUM
OVERALL WIDTH: 9.66 MILLIMETERS MINIMUM AND 10.66 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 12.70 MILLIMETERS MINIMUM AND 14.73 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 850.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
STM2N85/220
TRANSISTOR
NSN, MFG P/N
5961013628372
NSN
5961-01-362-8372
MFG
SEMICONDUCTOR TECHNOLOGY INC DBA S T I
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 3.56 MILLIMETERS MINIMUM AND 4.82 MILLIMETERS MAXIMUM
OVERALL LENGTH: 14.23 MILLIMETERS MINIMUM AND 16.51 MILLIMETERS MAXIMUM
OVERALL WIDTH: 9.66 MILLIMETERS MINIMUM AND 10.66 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 12.70 MILLIMETERS MINIMUM AND 14.73 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 850.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
