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5961-01-366-7996
20 Products
2163
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013667996
NSN
5961-01-366-7996
MFG
CENTROID INC.
Description
III END ITEM IDENTIFICATION: 6115012465622
SPECIAL FEATURES: ROTATING RECTIFIER ASSY; CONSISTING OF: SPLICE,PLATES,LEAD ASSYS,ADHEASIVE,LEADS,DISC,SLEEVING,SEMICONDUCTOR ASSY (FULL WAVE BRIDGE),RINGS,& INSULATION
Related Searches:
Q5 3178 4054
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961013665596
NSN
5961-01-366-5596
Q5 3178 4054
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961013665596
NSN
5961-01-366-5596
MFG
CONTRAVES INC
Description
III END ITEM IDENTIFICATION: SEMICONDUCTOR DEVICE FOR DRIVE CONTROL AMP,EOTSF
Related Searches:
SKKH91/08D
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013665700
NSN
5961-01-366-5700
SKKH91/08D
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013665700
NSN
5961-01-366-5700
MFG
SEMIKRON INTL INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 95.00 AMPERES ON-STATE CURRENT, AVERAGE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 900.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: A1 HALF-WAVE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 30.0 MILLIMETERS NOMINAL
OVERALL LENGTH: 93.0 MILLIMETERS NOMINAL
OVERALL WIDTH: 20.0 MILLIMETERS NOMINAL
TERMINAL TYPE AND QUANTITY: 2 TAB W/SCREW AND 1 TAB, SOLDER LUG
Related Searches:
1000-002
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013665933
NSN
5961-01-366-5933
1000-002
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013665933
NSN
5961-01-366-5933
MFG
THE WHITMOR COMPANY INC
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
1854-0573
TRANSISTOR
NSN, MFG P/N
5961013666119
NSN
5961-01-366-6119
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
SPECIAL FEATURES: NPN SI PD 30W; FT 10 MZ
Related Searches:
1296H77-85
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013666120
NSN
5961-01-366-6120
1296H77-85
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013666120
NSN
5961-01-366-6120
MFG
NAVAL INVENTORY CONTROL POINT MECHANICSBURG
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 3A62038H01
MANUFACTURERS CODE: 04804
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
3A62038H01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013666120
NSN
5961-01-366-6120
3A62038H01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013666120
NSN
5961-01-366-6120
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA ES POWER CONTROL SYSTEMS
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 3A62038H01
MANUFACTURERS CODE: 04804
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
1296H77-86
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013666121
NSN
5961-01-366-6121
1296H77-86
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013666121
NSN
5961-01-366-6121
MFG
NAVAL INVENTORY CONTROL POINT MECHANICSBURG
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 3A62038H02
MANUFACTURERS CODE: 04804
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
3A62038H02
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013666121
NSN
5961-01-366-6121
3A62038H02
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013666121
NSN
5961-01-366-6121
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA ES POWER CONTROL SYSTEMS
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 3A62038H02
MANUFACTURERS CODE: 04804
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
12941492
TRANSISTOR
NSN, MFG P/N
5961013667190
NSN
5961-01-366-7190
MFG
U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND
Description
III END ITEM IDENTIFICATION: USED ON M1A1,M1A2 TANK
MANUFACTURERS CODE: 19200
MFR SOURCE CONTROLLING REFERENCE: 12941492
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED
Related Searches:
2N3965
TRANSISTOR
NSN, MFG P/N
5961013667190
NSN
5961-01-366-7190
MFG
FREESCALE SEMICONDUCTOR INC.
Description
III END ITEM IDENTIFICATION: USED ON M1A1,M1A2 TANK
MANUFACTURERS CODE: 19200
MFR SOURCE CONTROLLING REFERENCE: 12941492
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED
Related Searches:
MCR22-6
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013667426
NSN
5961-01-366-7426
MCR22-6
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013667426
NSN
5961-01-366-7426
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES NOMINAL ON-STATE CURRENT, INSTANTANEOUS
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.1 WATTS NOMINAL AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL LENGTH: 0.030 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
MM4033
TRANSISTOR
NSN, MFG P/N
5961013667804
NSN
5961-01-366-7804
MFG
FREESCALE SEMICONDUCTOR INC.
Description
TRANSISTOR
Related Searches:
RFL1N12L
TRANSISTOR
NSN, MFG P/N
5961013667805
NSN
5961-01-366-7805
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV ADVANCED TECHNOLOGY LABORATORIES
Description
TRANSISTOR
Related Searches:
048905-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013667806
NSN
5961-01-366-7806
048905-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013667806
NSN
5961-01-366-7806
MFG
THALES ATM INC.
Description
DESIGN CONTROL REFERENCE: MFE201
III END ITEM IDENTIFICATION: DISTANCE MEASURING EQUIPMENT
MANUFACTURERS CODE: 04713
THE MANUFACTURERS DATA:
Related Searches:
MFE201
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013667806
NSN
5961-01-366-7806
MFG
FREESCALE SEMICONDUCTOR INC.
Description
DESIGN CONTROL REFERENCE: MFE201
III END ITEM IDENTIFICATION: DISTANCE MEASURING EQUIPMENT
MANUFACTURERS CODE: 04713
THE MANUFACTURERS DATA:
Related Searches:
JAN1N6304R
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013667939
NSN
5961-01-366-7939
JAN1N6304R
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013667939
NSN
5961-01-366-7939
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES NOMINAL AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 50-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N6304R
FEATURES PROVIDED: GOLD PLATED LEADS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-203AB
MANUFACTURERS CODE: 81349
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/550
OVERALL DIAMETER: 0.667 INCHES MAXIMUM
OVERALL LENGTH: 1.172 INCHES MINIMUM AND 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.669 INCHES MINIMUM AND 0.688 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: R INDICATES REVERSE POLARITY; JUNCTION PATTERN ARRANGEMENT: PN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/550 GOVERNMENT SPECIFICATION
Related Searches:
89108794-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013667940
NSN
5961-01-366-7940
89108794-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013667940
NSN
5961-01-366-7940
MFG
DPA LABS INC. DBA DPA COMPONENTS INTERNATIONAL
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: HCI&ESD SELECT FRM JANTX1N647-1
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/240 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 480.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 400.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
0501-0616-10
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013667942
NSN
5961-01-366-7942
0501-0616-10
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013667942
NSN
5961-01-366-7942
MFG
HILL ROSS CONTROLS CORP
Description
(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 1.000 POUNDS
CURRENT RATING PER CHARACTERISTIC: 1000.00 AMPERES NOMINAL ON-STATE CURRENT, AVERAGE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL DIAMETER: 2.850 INCHES MINIMUM AND 2.900 INCHES MAXIMUM
OVERALL LENGTH: 1.030 INCHES MINIMUM AND 1.070 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD W/TERMINAL LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
T9G0201203DE
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013667942
NSN
5961-01-366-7942
T9G0201203DE
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013667942
NSN
5961-01-366-7942
MFG
CALYPSO WATERJET SYSTEMS INC
Description
(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 1.000 POUNDS
CURRENT RATING PER CHARACTERISTIC: 1000.00 AMPERES NOMINAL ON-STATE CURRENT, AVERAGE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL DIAMETER: 2.850 INCHES MINIMUM AND 2.900 INCHES MAXIMUM
OVERALL LENGTH: 1.030 INCHES MINIMUM AND 1.070 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD W/TERMINAL LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE
