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5961-01-059-5970

20 Products

143126011

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010595970

NSN

5961-01-059-5970

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143126011

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010595970

NSN

5961-01-059-5970

MFG

POWEREX INC

Description

CURRENT RATING PER CHARACTERISTIC: 400.00 AMPERES NOMINAL FORWARD CURRENT, AVERAGE
DESIGN CONTROL REFERENCE: A397N
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 66844
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: COMPRESSION
OVERALL DIAMETER: 1.600 INCHES MINIMUM AND 1.656 INCHES MAXIMUM
OVERALL LENGTH: 0.515 INCHES MINIMUM AND 0.565 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 CASE
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

11019656-1

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010594041

NSN

5961-01-059-4041

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11019656-1

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010594041

NSN

5961-01-059-4041

MFG

NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DIV LASER SYSTEMS

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM PEAK ON-STATE SURGE CURRENT AND 100.00 AMPERES MAXIMUM REPETITIVE PEAK ON-STATE CURRENT
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.355 INCHES MINIMUM AND 0.366 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL CIRCLE DIAMETER: 0.195 INCHES NOMINAL
TERMINAL LENGTH: 0.985 INCHES MINIMUM AND 1.015 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 58260-13079910 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 700.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

13079910

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010594041

NSN

5961-01-059-4041

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13079910

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010594041

NSN

5961-01-059-4041

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM PEAK ON-STATE SURGE CURRENT AND 100.00 AMPERES MAXIMUM REPETITIVE PEAK ON-STATE CURRENT
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.355 INCHES MINIMUM AND 0.366 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL CIRCLE DIAMETER: 0.195 INCHES NOMINAL
TERMINAL LENGTH: 0.985 INCHES MINIMUM AND 1.015 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 58260-13079910 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 700.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

40833

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010594041

NSN

5961-01-059-4041

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40833

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010594041

NSN

5961-01-059-4041

MFG

INTERSIL CORPORATION

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM PEAK ON-STATE SURGE CURRENT AND 100.00 AMPERES MAXIMUM REPETITIVE PEAK ON-STATE CURRENT
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.355 INCHES MINIMUM AND 0.366 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL CIRCLE DIAMETER: 0.195 INCHES NOMINAL
TERMINAL LENGTH: 0.985 INCHES MINIMUM AND 1.015 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 58260-13079910 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 700.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

48P228646-01

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010594041

NSN

5961-01-059-4041

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48P228646-01

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010594041

NSN

5961-01-059-4041

MFG

HERLEY CHICAGO DBA STEWART WARNER ELECTRONICS

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM PEAK ON-STATE SURGE CURRENT AND 100.00 AMPERES MAXIMUM REPETITIVE PEAK ON-STATE CURRENT
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.355 INCHES MINIMUM AND 0.366 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL CIRCLE DIAMETER: 0.195 INCHES NOMINAL
TERMINAL LENGTH: 0.985 INCHES MINIMUM AND 1.015 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 58260-13079910 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 700.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

D29-0001-000

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010594041

NSN

5961-01-059-4041

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D29-0001-000

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010594041

NSN

5961-01-059-4041

MFG

HARRIS CORPORATION DBA HARRIS RF COMMUNICATION

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM PEAK ON-STATE SURGE CURRENT AND 100.00 AMPERES MAXIMUM REPETITIVE PEAK ON-STATE CURRENT
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.355 INCHES MINIMUM AND 0.366 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL CIRCLE DIAMETER: 0.195 INCHES NOMINAL
TERMINAL LENGTH: 0.985 INCHES MINIMUM AND 1.015 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 58260-13079910 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 700.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

FBP-00-056

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010594041

NSN

5961-01-059-4041

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FBP-00-056

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010594041

NSN

5961-01-059-4041

MFG

VEECO INSTRUMENTS INC LAMBDA DIV

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM PEAK ON-STATE SURGE CURRENT AND 100.00 AMPERES MAXIMUM REPETITIVE PEAK ON-STATE CURRENT
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.355 INCHES MINIMUM AND 0.366 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL CIRCLE DIAMETER: 0.195 INCHES NOMINAL
TERMINAL LENGTH: 0.985 INCHES MINIMUM AND 1.015 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 58260-13079910 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 700.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

S2600M

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010594041

NSN

5961-01-059-4041

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S2600M

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010594041

NSN

5961-01-059-4041

MFG

HARRIS CORP SEMICONDUCTOR SECTOR

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM PEAK ON-STATE SURGE CURRENT AND 100.00 AMPERES MAXIMUM REPETITIVE PEAK ON-STATE CURRENT
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.355 INCHES MINIMUM AND 0.366 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL CIRCLE DIAMETER: 0.195 INCHES NOMINAL
TERMINAL LENGTH: 0.985 INCHES MINIMUM AND 1.015 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 58260-13079910 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 700.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

11512971

TRANSISTOR

NSN, MFG P/N

5961010594048

NSN

5961-01-059-4048

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11512971

TRANSISTOR

NSN, MFG P/N

5961010594048

NSN

5961-01-059-4048

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.6 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: 2 PLATE,RETAINERS INCLUDED; JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 INSULATED WIRE LEAD
TEST DATA DOCUMENT: 18876-11512971 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -60.0 MAXIM

677005

SOCKET,PHOTOELECTRI

NSN, MFG P/N

5961010594193

NSN

5961-01-059-4193

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677005

SOCKET,PHOTOELECTRI

NSN, MFG P/N

5961010594193

NSN

5961-01-059-4193

MFG

SKAN-A-MATIC CORP

461650-1

TRANSISTOR

NSN, MFG P/N

5961010594353

NSN

5961-01-059-4353

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461650-1

TRANSISTOR

NSN, MFG P/N

5961010594353

NSN

5961-01-059-4353

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AN/GPN-22
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.017 INCHES MINIMUM AND 0.024 INCHES MAXIMUM
TERMINAL LENGTH: 0.120 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN

SA2451

TRANSISTOR

NSN, MFG P/N

5961010594353

NSN

5961-01-059-4353

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SA2451

TRANSISTOR

NSN, MFG P/N

5961010594353

NSN

5961-01-059-4353

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AN/GPN-22
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.017 INCHES MINIMUM AND 0.024 INCHES MAXIMUM
TERMINAL LENGTH: 0.120 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN

SHQ493H

TRANSISTOR

NSN, MFG P/N

5961010594353

NSN

5961-01-059-4353

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SHQ493H

TRANSISTOR

NSN, MFG P/N

5961010594353

NSN

5961-01-059-4353

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AN/GPN-22
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.017 INCHES MINIMUM AND 0.024 INCHES MAXIMUM
TERMINAL LENGTH: 0.120 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN

SPD546A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010595449

NSN

5961-01-059-5449

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SPD546A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010595449

NSN

5961-01-059-5449

MFG

SOLID STATE DEVICES INC.

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.275 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

85607200-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010595781

NSN

5961-01-059-5781

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85607200-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010595781

NSN

5961-01-059-5781

MFG

GENERAL DYNAMICS INFORMATION SYSTEMS INC. DBA GENERAL DYNAMICS ADVANCED INFORMATION SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 120.00 AMPERES MAXIMUM REPETITIVE PEAK FORWARD CURRENT AND 800.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL DIAMETER: 0.667 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

SRD5120

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010595781

NSN

5961-01-059-5781

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SRD5120

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010595781

NSN

5961-01-059-5781

MFG

TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES

Description

CURRENT RATING PER CHARACTERISTIC: 120.00 AMPERES MAXIMUM REPETITIVE PEAK FORWARD CURRENT AND 800.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL DIAMETER: 0.667 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

401PDL80S20

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010595970

NSN

5961-01-059-5970

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401PDL80S20

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010595970

NSN

5961-01-059-5970

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

CURRENT RATING PER CHARACTERISTIC: 400.00 AMPERES NOMINAL FORWARD CURRENT, AVERAGE
DESIGN CONTROL REFERENCE: A397N
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 66844
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: COMPRESSION
OVERALL DIAMETER: 1.600 INCHES MINIMUM AND 1.656 INCHES MAXIMUM
OVERALL LENGTH: 0.515 INCHES MINIMUM AND 0.565 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 CASE
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

543-126-011

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010595970

NSN

5961-01-059-5970

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543-126-011

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010595970

NSN

5961-01-059-5970

MFG

EATON CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 400.00 AMPERES NOMINAL FORWARD CURRENT, AVERAGE
DESIGN CONTROL REFERENCE: A397N
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 66844
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: COMPRESSION
OVERALL DIAMETER: 1.600 INCHES MINIMUM AND 1.656 INCHES MAXIMUM
OVERALL LENGTH: 0.515 INCHES MINIMUM AND 0.565 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 CASE
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

A397N

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010595970

NSN

5961-01-059-5970

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A397N

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010595970

NSN

5961-01-059-5970

MFG

GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT

Description

CURRENT RATING PER CHARACTERISTIC: 400.00 AMPERES NOMINAL FORWARD CURRENT, AVERAGE
DESIGN CONTROL REFERENCE: A397N
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 66844
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: COMPRESSION
OVERALL DIAMETER: 1.600 INCHES MINIMUM AND 1.656 INCHES MAXIMUM
OVERALL LENGTH: 0.515 INCHES MINIMUM AND 0.565 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 CASE
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

A397NX18

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010595970

NSN

5961-01-059-5970

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A397NX18

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010595970

NSN

5961-01-059-5970

MFG

GENERAL ELECTRIC CO ELECTRIC CAPACITOR PRODUCT SECTION

Description

CURRENT RATING PER CHARACTERISTIC: 400.00 AMPERES NOMINAL FORWARD CURRENT, AVERAGE
DESIGN CONTROL REFERENCE: A397N
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 66844
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: COMPRESSION
OVERALL DIAMETER: 1.600 INCHES MINIMUM AND 1.656 INCHES MAXIMUM
OVERALL LENGTH: 0.515 INCHES MINIMUM AND 0.565 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 CASE
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE