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5961-01-367-1966
20 Products
7555289P0601
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013671966
NSN
5961-01-367-1966
7555289P0601
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013671966
NSN
5961-01-367-1966
MFG
LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES NOMINAL REVERSE CURRENT, DC
FEATURES PROVIDED: BURN IN AND GOLD PLATED LEADS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED HOLE
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL HEIGHT: 0.005 INCHES MINIMUM AND 0.010 INCHES MAXIMUM
OVERALL LENGTH: 0.010 INCHES MINIMUM AND 0.020 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS PROCESS; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 1 UNTHREADED HOLE AND 1 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS
Related Searches:
950F811-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013667996
NSN
5961-01-366-7996
950F811-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013667996
NSN
5961-01-366-7996
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
III END ITEM IDENTIFICATION: 6115012465622
SPECIAL FEATURES: ROTATING RECTIFIER ASSY; CONSISTING OF: SPLICE,PLATES,LEAD ASSYS,ADHEASIVE,LEADS,DISC,SLEEVING,SEMICONDUCTOR ASSY (FULL WAVE BRIDGE),RINGS,& INSULATION
Related Searches:
PB125N60SM
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013667997
NSN
5961-01-366-7997
PB125N60SM
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013667997
NSN
5961-01-366-7997
MFG
GENERAL SEMICONDUCTOR INC
Description
MAJOR COMPONENTS: 2 TRANSISTORS
MOUNTING CONFIGURATION: MOUNTED BY 2 UNTHREADED HOLES
Related Searches:
2745-0702-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013668103
NSN
5961-01-366-8103
2745-0702-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013668103
NSN
5961-01-366-8103
MFG
VERIDIAN ENGINEERING INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
0N378529
TRANSISTOR
NSN, MFG P/N
5961013669564
NSN
5961-01-366-9564
MFG
NATIONAL SECURITY AGENCY
Description
TRANSISTOR
Related Searches:
SFNF101AL
TRANSISTOR
NSN, MFG P/N
5961013669564
NSN
5961-01-366-9564
MFG
SOLITRON DEVICES INC.
Description
TRANSISTOR
Related Searches:
200145-3
TRANSISTOR
NSN, MFG P/N
5961013670715
NSN
5961-01-367-0715
MFG
ITT CORPORATION DBA ITT GILFILLAN
Description
TRANSISTOR
Related Searches:
200145-2
TRANSISTOR
NSN, MFG P/N
5961013670716
NSN
5961-01-367-0716
MFG
ITT CORPORATION DBA ITT GILFILLAN
Description
TRANSISTOR
Related Searches:
1N6043A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013670717
NSN
5961-01-367-0717
MFG
SEMICON COMPONENTS INC
Description
CRITICALITY CODE JUSTIFICATION: FEAT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
Related Searches:
5R4818-008-0009
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013670717
NSN
5961-01-367-0717
5R4818-008-0009
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013670717
NSN
5961-01-367-0717
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
CRITICALITY CODE JUSTIFICATION: FEAT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
Related Searches:
NH5R4818-008
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013670717
NSN
5961-01-367-0717
NH5R4818-008
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013670717
NSN
5961-01-367-0717
MFG
DLA LAND AND MARITIME
Description
CRITICALITY CODE JUSTIFICATION: FEAT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
Related Searches:
2N2609
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013671213
NSN
5961-01-367-1213
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
III END ITEM IDENTIFICATION: M1A1 TANK
MANUFACTURERS CODE: 19200
MFR SOURCE CONTROLLING REFERENCE: 9377727
MOUNTING METHOD: TERMINAL
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 PIN
Related Searches:
9377727
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013671213
NSN
5961-01-367-1213
MFG
U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND
Description
III END ITEM IDENTIFICATION: M1A1 TANK
MANUFACTURERS CODE: 19200
MFR SOURCE CONTROLLING REFERENCE: 9377727
MOUNTING METHOD: TERMINAL
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 PIN
Related Searches:
JANX2N2609
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013671213
NSN
5961-01-367-1213
JANX2N2609
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013671213
NSN
5961-01-367-1213
MFG
SOLITRON DEVICES INC.
Description
III END ITEM IDENTIFICATION: M1A1 TANK
MANUFACTURERS CODE: 19200
MFR SOURCE CONTROLLING REFERENCE: 9377727
MOUNTING METHOD: TERMINAL
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 PIN
Related Searches:
12345889
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013671214
NSN
5961-01-367-1214
12345889
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013671214
NSN
5961-01-367-1214
MFG
U S ARMY TANK AUTOMOTIVE COMMAND AMSTA-IM-MM
Description
III END ITEM IDENTIFICATION: M1A1 TANK
MANUFACTURERS CODE: 19207
MFR SOURCE CONTROLLING REFERENCE: 12345889
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES NOMINAL
OVERALL LENGTH: 0.750 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 PIN
Related Searches:
JAN2N2326
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013671214
NSN
5961-01-367-1214
JAN2N2326
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013671214
NSN
5961-01-367-1214
MFG
MICRO USPD INC
Description
III END ITEM IDENTIFICATION: M1A1 TANK
MANUFACTURERS CODE: 19207
MFR SOURCE CONTROLLING REFERENCE: 12345889
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES NOMINAL
OVERALL LENGTH: 0.750 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 PIN
Related Searches:
99162621
TRANSISTOR
NSN, MFG P/N
5961013671963
NSN
5961-01-367-1963
MFG
THALES
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 145.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 90.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.594 INCHES MAXIMUM
OVERALL WIDTH: 0.415 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.550 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
IRFZ34
TRANSISTOR
NSN, MFG P/N
5961013671963
NSN
5961-01-367-1963
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 145.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 90.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.594 INCHES MAXIMUM
OVERALL WIDTH: 0.415 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.550 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
A3005495-1
TRANSISTOR
NSN, MFG P/N
5961013671964
NSN
5961-01-367-1964
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, RMS VALUE OF ALTERNATION COMPONENT AND 200.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, INSTANTANEOUS
FEATURES PROVIDED: BURN IN
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 80063-A3005495 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 NOMINAL COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 40.0 NOMINAL COLLECTOR TO EMITTE
Related Searches:
MM3227HX
TRANSISTOR
NSN, MFG P/N
5961013671964
NSN
5961-01-367-1964
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, RMS VALUE OF ALTERNATION COMPONENT AND 200.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, INSTANTANEOUS
FEATURES PROVIDED: BURN IN
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 80063-A3005495 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 NOMINAL COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 40.0 NOMINAL COLLECTOR TO EMITTE
