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5961-01-392-0851
20 Products
6200221-1
TRANSISTOR
NSN, MFG P/N
5961013920851
NSN
5961-01-392-0851
MFG
RAYTHEON COMPANY
Description
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.160 INCHES MAXIMUM
OVERALL LENGTH: 0.370 INCHES MINIMUM AND 0.380 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 900.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION
TERMINAL CIRCLE DIAMETER: 0.013 INCHES MINIMUM AND 0.017 INCHES MAXIMUM
TERMINAL LENGTH: 0.052 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 17.0 MAXIMUM SOURCE SUPPLY VOLTAGE
Related Searches:
SSP88-7712
TRANSISTOR
NSN, MFG P/N
5961013920851
NSN
5961-01-392-0851
MFG
AGILENT TECHNOLOGIES INC. DIV SEMICONDUCTOR PRODUCTS GROUP BUSINESS CENTER
Description
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.160 INCHES MAXIMUM
OVERALL LENGTH: 0.370 INCHES MINIMUM AND 0.380 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 900.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION
TERMINAL CIRCLE DIAMETER: 0.013 INCHES MINIMUM AND 0.017 INCHES MAXIMUM
TERMINAL LENGTH: 0.052 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 17.0 MAXIMUM SOURCE SUPPLY VOLTAGE
Related Searches:
6100779-1
TRANSISTOR
NSN, MFG P/N
5961013920852
NSN
5961-01-392-0852
MFG
RAYTHEON COMPANY
Description
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.050 INCHES MAXIMUM
OVERALL LENGTH: 0.065 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 275.0 MILLIWATTS MAXIMUM OFF-STATE POWER DISSIPATION
TERMINAL TYPE AND QUANTITY: 4 PIN
Related Searches:
SMA89-10402
TRANSISTOR
NSN, MFG P/N
5961013920852
NSN
5961-01-392-0852
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.050 INCHES MAXIMUM
OVERALL LENGTH: 0.065 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 275.0 MILLIWATTS MAXIMUM OFF-STATE POWER DISSIPATION
TERMINAL TYPE AND QUANTITY: 4 PIN
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6100671-11
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013920853
NSN
5961-01-392-0853
6100671-11
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013920853
NSN
5961-01-392-0853
MFG
RAYTHEON COMPANY
Description
SEMICONDUCTOR DEVICE,DIODE
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CDLL5224B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013920853
NSN
5961-01-392-0853
MFG
COMPENSATED DEVICES INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
6200219-1
TRANSISTOR
NSN, MFG P/N
5961013920854
NSN
5961-01-392-0854
MFG
RAYTHEON COMPANY
Description
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.160 INCHES MAXIMUM
OVERALL LENGTH: 0.370 INCHES MINIMUM AND 0.380 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
TERMINAL CIRCLE DIAMETER: 0.013 INCHES MINIMUM AND 0.017 INCHES MAXIMUM
TERMINAL LENGTH: 0.052 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 17.0 MAXIMUM SOURCE SUPPLY VOLTAGE
Related Searches:
SPP88-7711
TRANSISTOR
NSN, MFG P/N
5961013920854
NSN
5961-01-392-0854
MFG
AGILENT TECHNOLOGIES INC. DIV SEMICONDUCTOR PRODUCTS GROUP BUSINESS CENTER
Description
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.160 INCHES MAXIMUM
OVERALL LENGTH: 0.370 INCHES MINIMUM AND 0.380 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
TERMINAL CIRCLE DIAMETER: 0.013 INCHES MINIMUM AND 0.017 INCHES MAXIMUM
TERMINAL LENGTH: 0.052 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 17.0 MAXIMUM SOURCE SUPPLY VOLTAGE
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785HFL60S02
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013920879
NSN
5961-01-392-0879
785HFL60S02
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013920879
NSN
5961-01-392-0879
MFG
VR ELECTRONICS CO LTD /LTEE
Description
SEMICONDUCTOR DEVICE,DIODE
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PL803-217-003 ITEM 12
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013920879
NSN
5961-01-392-0879
PL803-217-003 ITEM 12
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013920879
NSN
5961-01-392-0879
MFG
PIVOTAL POWER INC
Description
SEMICONDUCTOR DEVICE,DIODE
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T85HFL60S02
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013920879
NSN
5961-01-392-0879
T85HFL60S02
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013920879
NSN
5961-01-392-0879
MFG
SEMICON COMPONENTS INC
Description
SEMICONDUCTOR DEVICE,DIODE
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1N4696
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013921093
NSN
5961-01-392-1093
MFG
MICRO-METRICS INC. DBA AEROFLEX / METELICS - EAST
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
2664390-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013922035
NSN
5961-01-392-2035
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
SEMICONDUCTOR DEVICE,DIODE
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1906-0313
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013922869
NSN
5961-01-392-2869
1906-0313
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013922869
NSN
5961-01-392-2869
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 3.50 AMPERES FORWARD CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 REVERSE VOLTAGE, INSTANTANEOUS
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.295 INCHES NOMINAL
OVERALL LENGTH: 0.985 INCHES NOMINAL
OVERALL WIDTH: 0.985 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
Related Searches:
1901-1217
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013922870
NSN
5961-01-392-2870
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.189 INCHES NOMINAL
OVERALL LENGTH: 0.650 INCHES NOMINAL
OVERALL WIDTH: 0.531 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.6 WATTS NOMINAL TOTAL DEVICE DISSIPATION
TERMINAL LENGTH: 1.182 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
1854-1080
TRANSISTOR
NSN, MFG P/N
5961013922871
NSN
5961-01-392-2871
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 0.157 INCHES NOMINAL
OVERALL LENGTH: 0.603 INCHES NOMINAL
OVERALL WIDTH: 0.453 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 40.0 WATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 PIN
Related Searches:
1855-0616
TRANSISTOR
NSN, MFG P/N
5961013922874
NSN
5961-01-392-2874
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.447 INCHES NOMINAL
OVERALL LENGTH: 1.574 INCHES NOMINAL
OVERALL WIDTH: 1.038 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.457 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
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1901-1175
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013922875
NSN
5961-01-392-2875
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 1.80 AMPERES NOMINAL FORWARD CURRENT, DC
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.189 INCHES NOMINAL
OVERALL LENGTH: 0.296 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.945 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS
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A343A553-101
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013923243
NSN
5961-01-392-3243
A343A553-101
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013923243
NSN
5961-01-392-3243
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
RETAINER,SEMICONDUCTOR DEVICE
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A531A208-101
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013923254
NSN
5961-01-392-3254
A531A208-101
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013923254
NSN
5961-01-392-3254
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
SEMICONDUCTOR DEVICE ASSEMBLY
