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5961-01-422-2875

20 Products

131024

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014222875

NSN

5961-01-422-2875

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131024

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014222875

NSN

5961-01-422-2875

MFG

FLUKE CORPORATION

BZX84-B47

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014222601

NSN

5961-01-422-2601

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BZX84-B47

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014222601

NSN

5961-01-422-2601

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

INCLOSURE MATERIAL: PLASTIC
OVERALL LENGTH: 3.0 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: SILICON

917463

TRANSISTOR

NSN, MFG P/N

5961014222602

NSN

5961-01-422-2602

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917463

TRANSISTOR

NSN, MFG P/N

5961014222602

NSN

5961-01-422-2602

MFG

FLUKE CORPORATION

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
OVERALL LENGTH: 3.0 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: SILICON

BSS83

TRANSISTOR

NSN, MFG P/N

5961014222602

NSN

5961-01-422-2602

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BSS83

TRANSISTOR

NSN, MFG P/N

5961014222602

NSN

5961-01-422-2602

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
OVERALL LENGTH: 3.0 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: SILICON

135801

TRANSISTOR

NSN, MFG P/N

5961014222605

NSN

5961-01-422-2605

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135801

TRANSISTOR

NSN, MFG P/N

5961014222605

NSN

5961-01-422-2605

MFG

FLUKE CORPORATION

Description

INCLOSURE MATERIAL: PLASTIC
OVERALL LENGTH: 3.0 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN

BFS20

TRANSISTOR

NSN, MFG P/N

5961014222605

NSN

5961-01-422-2605

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BFS20

TRANSISTOR

NSN, MFG P/N

5961014222605

NSN

5961-01-422-2605

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

INCLOSURE MATERIAL: PLASTIC
OVERALL LENGTH: 3.0 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN

150893

TRANSISTOR

NSN, MFG P/N

5961014222809

NSN

5961-01-422-2809

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150893

TRANSISTOR

NSN, MFG P/N

5961014222809

NSN

5961-01-422-2809

MFG

FLUKE CORPORATION

Description

INCLOSURE MATERIAL: PLASTIC
OVERALL LENGTH: 10.0 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

2SK1119

TRANSISTOR

NSN, MFG P/N

5961014222812

NSN

5961-01-422-2812

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2SK1119

TRANSISTOR

NSN, MFG P/N

5961014222812

NSN

5961-01-422-2812

MFG

HITACHI DENSHI LTD

Description

INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
OVERALL LENGTH: 10.0 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: SILICON

938951

TRANSISTOR

NSN, MFG P/N

5961014222812

NSN

5961-01-422-2812

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938951

TRANSISTOR

NSN, MFG P/N

5961014222812

NSN

5961-01-422-2812

MFG

FLUKE CORPORATION

Description

INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
OVERALL LENGTH: 10.0 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: SILICON

917484

TRANSISTOR

NSN, MFG P/N

5961014222834

NSN

5961-01-422-2834

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917484

TRANSISTOR

NSN, MFG P/N

5961014222834

NSN

5961-01-422-2834

MFG

FLUKE CORPORATION

Description

INCLOSURE MATERIAL: PLASTIC
OVERALL LENGTH: 3.0 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP

BRY62

TRANSISTOR

NSN, MFG P/N

5961014222834

NSN

5961-01-422-2834

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BRY62

TRANSISTOR

NSN, MFG P/N

5961014222834

NSN

5961-01-422-2834

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

INCLOSURE MATERIAL: PLASTIC
OVERALL LENGTH: 3.0 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP

922349

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014222869

NSN

5961-01-422-2869

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922349

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014222869

NSN

5961-01-422-2869

MFG

FLUKE CORPORATION

Description

INCLOSURE MATERIAL: PLASTIC
OVERALL LENGTH: 3.0 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: SILICON

BBY62

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014222869

NSN

5961-01-422-2869

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BBY62

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014222869

NSN

5961-01-422-2869

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

INCLOSURE MATERIAL: PLASTIC
OVERALL LENGTH: 3.0 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: SILICON

150885

TRANSISTOR

NSN, MFG P/N

5961014222870

NSN

5961-01-422-2870

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150885

TRANSISTOR

NSN, MFG P/N

5961014222870

NSN

5961-01-422-2870

MFG

FLUKE CORPORATION

BF579

TRANSISTOR

NSN, MFG P/N

5961014222870

NSN

5961-01-422-2870

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BF579

TRANSISTOR

NSN, MFG P/N

5961014222870

NSN

5961-01-422-2870

MFG

NATIONAL SEMICONDUCTOR CORPORATION

922351

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014222871

NSN

5961-01-422-2871

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922351

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014222871

NSN

5961-01-422-2871

MFG

FLUKE CORPORATION

BY709

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014222871

NSN

5961-01-422-2871

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BY709

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014222871

NSN

5961-01-422-2871

MFG

NATIONAL SEMICONDUCTOR CORPORATION

211024

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014222873

NSN

5961-01-422-2873

View More Info

211024

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014222873

NSN

5961-01-422-2873

MFG

FLUKE CORPORATION

BZX79-C3V0

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014222873

NSN

5961-01-422-2873

View More Info

BZX79-C3V0

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014222873

NSN

5961-01-422-2873

MFG

NATIONAL SEMICONDUCTOR CORPORATION

BZX79C3V0

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014222873

NSN

5961-01-422-2873

View More Info

BZX79C3V0

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014222873

NSN

5961-01-422-2873

MFG

BRITISH SAROZAL LTD