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5961-01-463-6803
20 Products
101-193
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014636803
NSN
5961-01-463-6803
MFG
PRESTOLITE ELECTRIC INCORPORATED
Description
III END ITEM IDENTIFICATION: 6115012747387E/IFSCM36024
Related Searches:
101-235
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014636805
NSN
5961-01-463-6805
MFG
PRESTOLITE ELECTRIC INCORPORATED
Description
III END ITEM IDENTIFICATION: 6115012747387E/IFSCM36024
Related Searches:
1N5711
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014637175
NSN
5961-01-463-7175
MFG
COMPENSATED DEVICES INC
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
Related Searches:
A3255948-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014637175
NSN
5961-01-463-7175
A3255948-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014637175
NSN
5961-01-463-7175
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
Related Searches:
353-8127-070
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014637610
NSN
5961-01-463-7610
353-8127-070
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014637610
NSN
5961-01-463-7610
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
III END ITEM IDENTIFICATION: HFRRE/IFSCM04713
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -65.0 DEG CELSIUS CASE AND 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: COMPRESSION
OVERALL HEIGHT: 0.061 INCHES MAXIMUM
OVERALL LENGTH: 0.098 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 225.0 MILLIWATTS MAXIMUM OFF-STATE POWER DISSIPATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM REGULATOR VOLTAGE, DC
Related Searches:
MMBZ2524BLT1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014637610
NSN
5961-01-463-7610
MMBZ2524BLT1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014637610
NSN
5961-01-463-7610
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
III END ITEM IDENTIFICATION: HFRRE/IFSCM04713
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -65.0 DEG CELSIUS CASE AND 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: COMPRESSION
OVERALL HEIGHT: 0.061 INCHES MAXIMUM
OVERALL LENGTH: 0.098 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 225.0 MILLIWATTS MAXIMUM OFF-STATE POWER DISSIPATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM REGULATOR VOLTAGE, DC
Related Searches:
VC120630D650
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014638082
NSN
5961-01-463-8082
VC120630D650
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014638082
NSN
5961-01-463-8082
MFG
AVX CORPORATION
Description
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.040 INCHES NOMINAL
OVERALL LENGTH: 0.126 INCHES NOMINAL
OVERALL WIDTH: 0.063 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: ZINC SULFIDE
TERMINAL TYPE AND QUANTITY: 1 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 NOMINAL BREAKOVER VOLTAGE, DC
Related Searches:
JANTX2N6849A
TRANSISTOR
NSN, MFG P/N
5961014638395
NSN
5961-01-463-8395
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: -6.50 AMPERES MAXIMUM REGULATOR CURRENT AND -25.00 AMPERES MAXIMUM DRAIN CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N6849A
III END ITEM IDENTIFICATION: 2320011231610E/IFSCM81349
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS CASE AND 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/564
OVERALL DIAMETER: 0.335 INCHES MAXIMUM
OVERALL LENGTH: 0.930 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/564 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.180 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-483-2 SPECIFICATION
VOLTAGE RATIN
Related Searches:
1N4627
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014638441
NSN
5961-01-463-8441
MFG
MICROSEMI CORPORATION
Description
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 2.275 INCHES MINIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NEXT HIGHER ASSY C-17ACFT FSCM88277
TERMINAL TYPE AND QUANTITY: 2 PIN
Related Searches:
13214045-02
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014639073
NSN
5961-01-463-9073
13214045-02
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014639073
NSN
5961-01-463-9073
MFG
NAVAL AIR SYSTEMS COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 3.60 AMPERES MAXIMUM DRAIN CURRENT AND 3.60 AMPERES MAXIMUM DETECTOR SIGNAL CURRENT
III END ITEM IDENTIFICATION: RSIPPPLE/IFSCM27963
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS CASE AND 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 1.195 INCHES MAXIMUM
OVERALL WIDTH: 0.249 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 96.0 WATTS MAXIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.790 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 1 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 900.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 900.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 NOMINAL DRAIN TO SUBSTRATE VOLTAGE
Related Searches:
356A1016P1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014639111
NSN
5961-01-463-9111
356A1016P1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014639111
NSN
5961-01-463-9111
MFG
BAE SYSTEMS CONTROLS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 75.00 AMPERES MAXIMUM DARK CURRENT AND 300.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
III END ITEM IDENTIFICATION: C-17AACFTE/IFSCM89954
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS CASE AND 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 0.855 INCHES MAXIMUM
OVERALL WIDTH: 0.545 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.800 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 1 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 100.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 NOMINAL DRAIN TO SUBSTRATE VOLTAGE
Related Searches:
SEN-2759-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014639111
NSN
5961-01-463-9111
SEN-2759-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014639111
NSN
5961-01-463-9111
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
CURRENT RATING PER CHARACTERISTIC: 75.00 AMPERES MAXIMUM DARK CURRENT AND 300.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
III END ITEM IDENTIFICATION: C-17AACFTE/IFSCM89954
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS CASE AND 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 0.855 INCHES MAXIMUM
OVERALL WIDTH: 0.545 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.800 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 1 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 100.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 NOMINAL DRAIN TO SUBSTRATE VOLTAGE
Related Searches:
SFX1016-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014639111
NSN
5961-01-463-9111
MFG
SOLID STATE DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 75.00 AMPERES MAXIMUM DARK CURRENT AND 300.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
III END ITEM IDENTIFICATION: C-17AACFTE/IFSCM89954
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS CASE AND 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 0.855 INCHES MAXIMUM
OVERALL WIDTH: 0.545 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.800 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 1 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 100.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 NOMINAL DRAIN TO SUBSTRATE VOLTAGE
Related Searches:
849-111-5552
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014639348
NSN
5961-01-463-9348
849-111-5552
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014639348
NSN
5961-01-463-9348
MFG
PARKER-HANNIFIN CORPORATION DBA CUSTOMER SUPPORT MILITARY DIVISION DIV CUSTOMER SUPPORT OPERATIONS
Description
III END ITEM IDENTIFICATION: C-17AACFTE/IFSCM88277
Related Searches:
SM5552
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014639348
NSN
5961-01-463-9348
MFG
MICRO USPD INC
Description
III END ITEM IDENTIFICATION: C-17AACFTE/IFSCM88277
Related Searches:
13217882-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014639702
NSN
5961-01-463-9702
13217882-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014639702
NSN
5961-01-463-9702
MFG
NAVAL AIR SYSTEMS COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 150.00 AMPERES MAXIMUM FORWARD CURRENT, DC AND 25.00 AMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS
III END ITEM IDENTIFICATION: RSIPPPLE/IFSCM30003
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -65.0 DEG CELSIUS CASE AND 200.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.180 INCHES MAXIMUM
OVERALL LENGTH: 2.185 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 30003-MIL-S-19500/420 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.185 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 30003-13217882-01 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 1.2 MAXIMUM ON VOLTAGE, FORWARD VOLTAGE DROP, DC
Related Searches:
SEM-1006-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014639756
NSN
5961-01-463-9756
SEM-1006-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014639756
NSN
5961-01-463-9756
MFG
FRANK L BEIER RADIO INC DBA COASTAL MARINE DISTRS DIV
Description
III END ITEM IDENTIFICATION: HF/SSBRADIOE/IFSCM03950
Related Searches:
SEM-1005-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014639758
NSN
5961-01-463-9758
SEM-1005-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014639758
NSN
5961-01-463-9758
MFG
XYZ MARINE INC.
Description
III END ITEM IDENTIFICATION: HF/SSBRADIOE/IFSCM03950
Related Searches:
SEM-1003-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014639763
NSN
5961-01-463-9763
SEM-1003-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014639763
NSN
5961-01-463-9763
MFG
FRANK L BEIER RADIO INC DBA COASTAL MARINE DISTRS DIV
Description
III END ITEM IDENTIFICATION: HF/SSBRADIOE/IFSCM03950
Related Searches:
SEM-1003-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014639767
NSN
5961-01-463-9767
SEM-1003-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014639767
NSN
5961-01-463-9767
MFG
FRANK L BEIER RADIO INC DBA COASTAL MARINE DISTRS DIV
Description
III END ITEM IDENTIFICATION: HF/SSBRADIOE/IFSCM03950
