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5961-01-576-1133
20 Products
STTH200HCFP
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015761133
NSN
5961-01-576-1133
STTH200HCFP
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015761133
NSN
5961-01-576-1133
MFG
ST MICROELECTRONICS
Description
III END ITEM IDENTIFICATION: MRAP - UNIQUE NSN - MRAP NO PERMANENT WSDC IDENTIFIED
Related Searches:
MP1204
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015757711
NSN
5961-01-575-7711
MFG
MPULSE MICROWAVE INC
Description
CAPACITANCE RATING IN PICOFARADS: 0.5 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 80.00 MICROAMPERES MAXIMUM VALLEY POINT CURRENT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: MICRWAVE TUNNEL DIODE
OVERALL LENGTH: 0.092 INCHES MINIMUM AND 0.104 INCHES MAXIMUM
SPECIAL FEATURES: PLANAR CONSTRUCTION; 100-200 MICROAMPERES AT IP; 80 MICROAMPERES MAX. AT IV
Related Searches:
91826328
TRANSISTOR
NSN, MFG P/N
5961015757790
NSN
5961-01-575-7790
MFG
THALES
Description
CURRENT RATING PER CHARACTERISTIC: 38.00 AMPERES MAXIMUM DRAIN CURRENT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: POWER MOS 7
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.819 INCHES MINIMUM AND 0.845 INCHES MAXIMUM
OVERALL LENGTH: 0.610 INCHES MINIMUM AND 0.640 INCHES MAXIMUM
OVERALL WIDTH: 0.185 INCHES MINIMUM AND 0.209 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 694.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
APT8020B2FLL
TRANSISTOR
NSN, MFG P/N
5961015757790
NSN
5961-01-575-7790
MFG
MICROSEMI CORP. - POWER PRODUCTS GROUP DBA ADVANCED POWER TECHNOLOGY INC DIV MICROSEMI CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 38.00 AMPERES MAXIMUM DRAIN CURRENT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: POWER MOS 7
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.819 INCHES MINIMUM AND 0.845 INCHES MAXIMUM
OVERALL LENGTH: 0.610 INCHES MINIMUM AND 0.640 INCHES MAXIMUM
OVERALL WIDTH: 0.185 INCHES MINIMUM AND 0.209 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 694.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
91777089
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015758231
NSN
5961-01-575-8231
MFG
THALES
Description
CAPACITANCE RATING IN PICOFARADS: 0.25 NOMINAL
INCLOSURE MATERIAL: PLASTIC
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 NOMINAL BREAKDOWN VOLTAGE, DC
Related Searches:
SMPN7316-SOT23-0S
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015758231
NSN
5961-01-575-8231
SMPN7316-SOT23-0S
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015758231
NSN
5961-01-575-8231
MFG
AEROFLEX / METELICS INC.
Description
CAPACITANCE RATING IN PICOFARADS: 0.25 NOMINAL
INCLOSURE MATERIAL: PLASTIC
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 NOMINAL BREAKDOWN VOLTAGE, DC
Related Searches:
91797694
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015758233
NSN
5961-01-575-8233
91797694
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015758233
NSN
5961-01-575-8233
MFG
THALES
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2000.0 WORKING PEAK REVERSE VOLTAGE
OVERALL DIAMETER: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.350 INCHES MAXIMUM
Related Searches:
Z20FF3LL
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015758233
NSN
5961-01-575-8233
Z20FF3LL
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015758233
NSN
5961-01-575-8233
MFG
VOLTAGE MULTIPLIERS INC. DBA V M I
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2000.0 WORKING PEAK REVERSE VOLTAGE
OVERALL DIAMETER: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.350 INCHES MAXIMUM
Related Searches:
91835255
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015759449
NSN
5961-01-575-9449
MFG
THALES
Description
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: LEADFREE; DIODES PACKAGED ON 7 FOOT REEL, 3000 COUNT; GROUNDED CENTER LEADS PROVIDE UP TO 10 DB HIGHER ISOLATION; IDEAL FOR RF/ID AND RF TAG APPLICATIONS
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 250.0 MINIMUM FORWARD VOLTAGE, AVERAGE AND 350.0 MAXIMUM FORWARD VOLTAGE, AVERAGE
Related Searches:
HSMS-286K-TR1G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015759449
NSN
5961-01-575-9449
HSMS-286K-TR1G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015759449
NSN
5961-01-575-9449
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: LEADFREE; DIODES PACKAGED ON 7 FOOT REEL, 3000 COUNT; GROUNDED CENTER LEADS PROVIDE UP TO 10 DB HIGHER ISOLATION; IDEAL FOR RF/ID AND RF TAG APPLICATIONS
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 250.0 MINIMUM FORWARD VOLTAGE, AVERAGE AND 350.0 MAXIMUM FORWARD VOLTAGE, AVERAGE
Related Searches:
91803710
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015759521
NSN
5961-01-575-9521
MFG
THALES
Description
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: TUNNEL DIODE
Related Searches:
M1X1454
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015759521
NSN
5961-01-575-9521
MFG
AEROFLEX / METELICS INC.
Description
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: TUNNEL DIODE
Related Searches:
91791108
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015759523
NSN
5961-01-575-9523
MFG
THALES
Description
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: PIN DIODE
Related Searches:
M5X3786
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015759523
NSN
5961-01-575-9523
MFG
AEROFLEX / METELICS INC.
Description
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: PIN DIODE
Related Searches:
5D0013-1C4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015759624
NSN
5961-01-575-9624
5D0013-1C4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015759624
NSN
5961-01-575-9624
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - GLOBAL MOBILITY SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
R-614
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015759624
NSN
5961-01-575-9624
MFG
RUSSTECH ENGINEERING CO INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
91835253
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015759834
NSN
5961-01-575-9834
MFG
THALES
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SURFACE MOUNT RF SCHOTTKY BARRIER DIODES
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: SINGLE CONFIGURATION; LEADFREE; DIODES PACKAGED ON 7 FOOT REEL, 3000 COUNT; IDEAL FOR MIXING, DETECTING, SWITCHING, SAMPLING, CLAMPING, AND WAVE SHAPING
Related Searches:
HSMS-282B-TR1G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015759834
NSN
5961-01-575-9834
HSMS-282B-TR1G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015759834
NSN
5961-01-575-9834
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SURFACE MOUNT RF SCHOTTKY BARRIER DIODES
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: SINGLE CONFIGURATION; LEADFREE; DIODES PACKAGED ON 7 FOOT REEL, 3000 COUNT; IDEAL FOR MIXING, DETECTING, SWITCHING, SAMPLING, CLAMPING, AND WAVE SHAPING
Related Searches:
91568793
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015759865
NSN
5961-01-575-9865
MFG
THALES
Description
CAPACITANCE RATING IN PICOFARADS: 0.1 MAXIMUM
III PART NAME ASSIGNED BY CONTROLLING AGENCY: BEAM LEAD SCHOTTKY DC TESTED DIODE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: LEADS GOLD
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
SPECIAL FEATURES: PLATINUM TRI-METAL SYSTEM; SILICON NITRIDE PASSIVATED; LOW BARRIER; PACKAGED 20 UNITS; 20 OHM MAX DYNAMIC REISTANCE; SUITED FOR STRIPLINE OR MICROLINE CIRCUITS; DC TESTED; 4 VOLT MIN BREAKDOWN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 375.0 MINIMUM FORWARD VOLTAGE, AVERAGE AND 400.0 MAXIMUM FORWARD VOLTAGE, AVERAGE
Related Searches:
HSCH-5331
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015759865
NSN
5961-01-575-9865
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CAPACITANCE RATING IN PICOFARADS: 0.1 MAXIMUM
III PART NAME ASSIGNED BY CONTROLLING AGENCY: BEAM LEAD SCHOTTKY DC TESTED DIODE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: LEADS GOLD
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
SPECIAL FEATURES: PLATINUM TRI-METAL SYSTEM; SILICON NITRIDE PASSIVATED; LOW BARRIER; PACKAGED 20 UNITS; 20 OHM MAX DYNAMIC REISTANCE; SUITED FOR STRIPLINE OR MICROLINE CIRCUITS; DC TESTED; 4 VOLT MIN BREAKDOWN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 375.0 MINIMUM FORWARD VOLTAGE, AVERAGE AND 400.0 MAXIMUM FORWARD VOLTAGE, AVERAGE
