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5962-00-211-1367

20 Products

351-7646-050

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002111367

NSN

5962-00-211-1367

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351-7646-050

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002111367

NSN

5962-00-211-1367

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.796 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/00801BCC
DESIGN FUNCTION AND QUANTITY: 6 BUFFER, INVERTING AND 6 DRIVER, INVERTING
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH VOLTAGE AND W/OPEN COLLECTOR
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: HEX 1 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 324.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/8
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/8 GOVERNMENT SPECIFICATI

51P01698H001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002111062

NSN

5962-00-211-1062

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51P01698H001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002111062

NSN

5962-00-211-1062

MFG

MOTOROLA INC. DBA INTEGRATED INFORMATION SYSTEMS GROUP

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 80.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

5422DMQB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002111062

NSN

5962-00-211-1062

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5422DMQB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002111062

NSN

5962-00-211-1062

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 80.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

B4012471-2

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002111062

NSN

5962-00-211-1062

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B4012471-2

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002111062

NSN

5962-00-211-1062

MFG

DEPARTMENT OF THE ARMY HQ UNITED STATES ARMY COMMUNICATIONS RESEARCH AND DEVELOPMENT COMMAND

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 80.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

DMS84007

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002111062

NSN

5962-00-211-1062

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DMS84007

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002111062

NSN

5962-00-211-1062

MFG

DLA LAND AND MARITIME

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 80.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

SN5422J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002111062

NSN

5962-00-211-1062

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SN5422J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002111062

NSN

5962-00-211-1062

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 80.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

SNJ5422JA

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002111062

NSN

5962-00-211-1062

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SNJ5422JA

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002111062

NSN

5962-00-211-1062

MFG

ADELCO ELEKTRONIK GMBH

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 80.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

C6657Q

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002111260

NSN

5962-00-211-1260

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C6657Q

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002111260

NSN

5962-00-211-1260

MFG

PHILIPS SEMICONDUCTORS INC

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.330 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-88 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN CONTROL REFERENCE: SM-A-597831-2
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K, CLOCKED
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND W/ENABLE AND RESETTABLE AND HIGH SPEED AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MANUFACTURERS CODE: 80063
MAXIMUM POWER DISSIPATION RATING: 415.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 80063-SM-A-597831 SPECIFICATION
THE MANUFACTURERS DATA:

SL8H20D1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002111260

NSN

5962-00-211-1260

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SL8H20D1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002111260

NSN

5962-00-211-1260

MFG

LANSDALE SEMICONDUCTOR INC .

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.330 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-88 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN CONTROL REFERENCE: SM-A-597831-2
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K, CLOCKED
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND W/ENABLE AND RESETTABLE AND HIGH SPEED AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MANUFACTURERS CODE: 80063
MAXIMUM POWER DISSIPATION RATING: 415.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 80063-SM-A-597831 SPECIFICATION
THE MANUFACTURERS DATA:

SM-A-597831-2

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002111260

NSN

5962-00-211-1260

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SM-A-597831-2

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002111260

NSN

5962-00-211-1260

MFG

US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.330 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-88 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN CONTROL REFERENCE: SM-A-597831-2
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K, CLOCKED
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND W/ENABLE AND RESETTABLE AND HIGH SPEED AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MANUFACTURERS CODE: 80063
MAXIMUM POWER DISSIPATION RATING: 415.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 80063-SM-A-597831 SPECIFICATION
THE MANUFACTURERS DATA:

351-7475-020

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002111266

NSN

5962-00-211-1266

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351-7475-020

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002111266

NSN

5962-00-211-1266

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

BODY HEIGHT: 0.065 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
BODY LENGTH: 0.620 INCHES MAXIMUM
BODY WIDTH: 0.365 INCHES MINIMUM AND 0.395 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND W/ENABLE AND PRESETTABLE AND HIGH SPEED AND SYNCHRONOUS AND POSITIVE OUTPUTS AND W/DECODED OUTPUT
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 350.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS

9306FC

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002111266

NSN

5962-00-211-1266

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9306FC

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002111266

NSN

5962-00-211-1266

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.065 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
BODY LENGTH: 0.620 INCHES MAXIMUM
BODY WIDTH: 0.365 INCHES MINIMUM AND 0.395 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND W/ENABLE AND PRESETTABLE AND HIGH SPEED AND SYNCHRONOUS AND POSITIVE OUTPUTS AND W/DECODED OUTPUT
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 350.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS

MC8306F

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002111266

NSN

5962-00-211-1266

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MC8306F

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002111266

NSN

5962-00-211-1266

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.065 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
BODY LENGTH: 0.620 INCHES MAXIMUM
BODY WIDTH: 0.365 INCHES MINIMUM AND 0.395 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND W/ENABLE AND PRESETTABLE AND HIGH SPEED AND SYNCHRONOUS AND POSITIVE OUTPUTS AND W/DECODED OUTPUT
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 350.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS

U4M930659X

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002111266

NSN

5962-00-211-1266

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U4M930659X

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002111266

NSN

5962-00-211-1266

MFG

ADVANCED MICRO DEVICES INC DBA A M D

Description

BODY HEIGHT: 0.065 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
BODY LENGTH: 0.620 INCHES MAXIMUM
BODY WIDTH: 0.365 INCHES MINIMUM AND 0.395 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND W/ENABLE AND PRESETTABLE AND HIGH SPEED AND SYNCHRONOUS AND POSITIVE OUTPUTS AND W/DECODED OUTPUT
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 350.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS

4037341-0701

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002111367

NSN

5962-00-211-1367

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4037341-0701

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002111367

NSN

5962-00-211-1367

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.796 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/00801BCC
DESIGN FUNCTION AND QUANTITY: 6 BUFFER, INVERTING AND 6 DRIVER, INVERTING
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH VOLTAGE AND W/OPEN COLLECTOR
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: HEX 1 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 324.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/8
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/8 GOVERNMENT SPECIFICATI

538708-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002111367

NSN

5962-00-211-1367

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538708-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002111367

NSN

5962-00-211-1367

MFG

RAYTHEON COMPANY

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.796 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/00801BCC
DESIGN FUNCTION AND QUANTITY: 6 BUFFER, INVERTING AND 6 DRIVER, INVERTING
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH VOLTAGE AND W/OPEN COLLECTOR
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: HEX 1 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 324.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/8
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/8 GOVERNMENT SPECIFICATI

5406DMQB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002111367

NSN

5962-00-211-1367

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5406DMQB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002111367

NSN

5962-00-211-1367

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.796 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/00801BCC
DESIGN FUNCTION AND QUANTITY: 6 BUFFER, INVERTING AND 6 DRIVER, INVERTING
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH VOLTAGE AND W/OPEN COLLECTOR
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: HEX 1 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 324.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/8
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/8 GOVERNMENT SPECIFICATI

581R500H71

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002111367

NSN

5962-00-211-1367

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581R500H71

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002111367

NSN

5962-00-211-1367

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.796 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/00801BCC
DESIGN FUNCTION AND QUANTITY: 6 BUFFER, INVERTING AND 6 DRIVER, INVERTING
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH VOLTAGE AND W/OPEN COLLECTOR
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: HEX 1 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 324.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/8
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/8 GOVERNMENT SPECIFICATI

JM38510/00801BCCA

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002111367

NSN

5962-00-211-1367

View More Info

JM38510/00801BCCA

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002111367

NSN

5962-00-211-1367

MFG

ADELCO ELEKTRONIK GMBH

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.796 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/00801BCC
DESIGN FUNCTION AND QUANTITY: 6 BUFFER, INVERTING AND 6 DRIVER, INVERTING
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH VOLTAGE AND W/OPEN COLLECTOR
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: HEX 1 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 324.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/8
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/8 GOVERNMENT SPECIFICATI

M38510/00801BCC

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002111367

NSN

5962-00-211-1367

View More Info

M38510/00801BCC

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002111367

NSN

5962-00-211-1367

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.796 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/00801BCC
DESIGN FUNCTION AND QUANTITY: 6 BUFFER, INVERTING AND 6 DRIVER, INVERTING
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH VOLTAGE AND W/OPEN COLLECTOR
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: HEX 1 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 324.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/8
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/8 GOVERNMENT SPECIFICATI