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5962-00-460-5744
20 Products
1820-0134
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004605744
NSN
5962-00-460-5744
MFG
AGILENT TECHNOLOGIES INC. DIV AGILENT TECHNOLOGIES HEADQUARTERS
Description
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.291 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 SHIFT REGISTER, UNIVERSAL
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND ASYNCHRONOUS AND RESETTABLE AND COMPLEMENTARY OUTPUTS AND HIGH SPEED AND POSITIVE OUTPUTS AND SYNCHRONOUS AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 9 INPUT
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 26.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOL
Related Searches:
U5B991029X
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004602147
NSN
5962-00-460-2147
MFG
THERMAL CIRCUITS INC .
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NOR
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND MEDIUM SPEED AND LOW POWER
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: DUAL 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 8.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: RESISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 4.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
US0910D
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004602147
NSN
5962-00-460-2147
MFG
SPRAGUE ELECTRIC CO WORLD HQS
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NOR
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND MEDIUM SPEED AND LOW POWER
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: DUAL 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 8.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: RESISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 4.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
NE156A
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004602621
NSN
5962-00-460-2621
MFG
PHILIPS SEMICONDUCTORS INC
Description
BODY HEIGHT: 0.115 INCHES MINIMUM AND 0.125 INCHES MAXIMUM
BODY LENGTH: 0.745 INCHES MINIMUM AND 0.755 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
DESIGN CONTROL REFERENCE: NE156A
DESIGN FUNCTION AND QUANTITY: 1 DRIVER, LINE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MANUFACTURERS CODE: 18324
SPECIAL FEATURES: SOLID MOLDED PKG,/1/ OUTPUT VOLTAGE 3.9 MIN AT 0 DEG C,3.9V AT 25 DEG C,1.8V AT 70 DEG C,/0/ OUTPUT VOLTAGE 0.45V MAX,/0/ INPUT CURRENT M0.5 MA MIN,M2.4 MA MAX,/1/ INPUT CURRENT 250NANOA AT 25 DEG C,10 MICRO AT 70 DEG C,EXPANDER NODE CURRENT M0.5 MA
~1: MIN,M2.4 MA MAX,INPUT VOLTAGE 6V MIN,OUTPUT VOLTAGE 6V MIN,OUTPUT FALL TIME 50NSEC,POWER RATING PER GATE 34MW MAX,TURN-OFF DELAY 80NSEC MAX,D FAN-OUT 19 MIN,AC FAN-OUT 20 MIN
Related Searches:
NE180A
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004602802
NSN
5962-00-460-2802
MFG
PHILIPS SEMICONDUCTORS INC
Description
DESIGN CONTROL REFERENCE: NE180A
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MANUFACTURERS CODE: 18324
SPECIAL FEATURES: SOLID MOLDED PKG,/1/ OUTPUT VOLTAGE 3.9V MIN AT 0 DEG C,3.9V MIN AT 25 DEG C,1.8V MIN AT 70 DEG C,0/0 OUTPUT VOLTAGE 0.45V MAX,/0/ INPUT CURRENT MO.5MA MIN,M1.9MA MAX,/1/ INPUT CURRENT 20NANOA AT 250 DEG C,10 MICROA AT 70 DEG C,EXPANDER NODE CURRENT
~1: M0.5MA MIN,2.4 MA MAX,INPUT VOLTAGE 6V MIN,OUTPUT VOLTAGE 6V MIN,POWER RATING PER GATE 15MW,INPUT CAPACITANCE 2.5 PF NORM,TURN-ON DELAY 54NSEC MAX,TURN-OFF DELAY 65NSEC MAX
Related Searches:
170A0944C2
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004602871
NSN
5962-00-460-2871
MFG
SIERRA NETWORKS INC SIERRACOM DIV
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND-NOR
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND EXPANDABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 100.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RAT
Related Searches:
MIC9441D
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004602871
NSN
5962-00-460-2871
MFG
ITT INDUSTRIES INC
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND-NOR
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND EXPANDABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 100.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RAT
Related Searches:
170A0930C2
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004602876
NSN
5962-00-460-2876
MFG
SIERRA NETWORKS INC SIERRACOM DIV
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND-NOR
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 65.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
Related Searches:
930DMQB
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004602876
NSN
5962-00-460-2876
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND-NOR
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 65.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
Related Searches:
MIC930-1D
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004602876
NSN
5962-00-460-2876
MFG
ITT SEMICONDUCTORS DIV
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND-NOR
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 65.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
Related Searches:
810003-093
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004605741
NSN
5962-00-460-5741
MFG
BAE SYSTEMS NATIONAL SECURITY SOLUTIONS INC.
Description
MICROCIRCUIT,DIGITAL
Related Searches:
T00007-2
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004605741
NSN
5962-00-460-5741
MFG
BAE SYSTEMS NATIONAL SECURITY SOLUTIONS INC.
Description
MICROCIRCUIT,DIGITAL
Related Searches:
349-113-052
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004605744
NSN
5962-00-460-5744
MFG
INTERSTATE ELECTRONICS CORPORATION
Description
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.291 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 SHIFT REGISTER, UNIVERSAL
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND ASYNCHRONOUS AND RESETTABLE AND COMPLEMENTARY OUTPUTS AND HIGH SPEED AND POSITIVE OUTPUTS AND SYNCHRONOUS AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 9 INPUT
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 26.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOL
Related Searches:
46B930059X
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004605744
NSN
5962-00-460-5744
MFG
SENSOR SYSTEMS LLC
Description
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.291 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 SHIFT REGISTER, UNIVERSAL
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND ASYNCHRONOUS AND RESETTABLE AND COMPLEMENTARY OUTPUTS AND HIGH SPEED AND POSITIVE OUTPUTS AND SYNCHRONOUS AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 9 INPUT
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 26.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOL
Related Searches:
75802-0026
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004605744
NSN
5962-00-460-5744
MFG
SATAIR A/S
Description
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.291 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 SHIFT REGISTER, UNIVERSAL
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND ASYNCHRONOUS AND RESETTABLE AND COMPLEMENTARY OUTPUTS AND HIGH SPEED AND POSITIVE OUTPUTS AND SYNCHRONOUS AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 9 INPUT
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 26.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOL
Related Searches:
75802-0027
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004605744
NSN
5962-00-460-5744
MFG
SATAIR A/S
Description
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.291 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 SHIFT REGISTER, UNIVERSAL
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND ASYNCHRONOUS AND RESETTABLE AND COMPLEMENTARY OUTPUTS AND HIGH SPEED AND POSITIVE OUTPUTS AND SYNCHRONOUS AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 9 INPUT
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 26.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOL
Related Searches:
75802-0028
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004605744
NSN
5962-00-460-5744
MFG
SATAIR A/S
Description
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.291 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 SHIFT REGISTER, UNIVERSAL
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND ASYNCHRONOUS AND RESETTABLE AND COMPLEMENTARY OUTPUTS AND HIGH SPEED AND POSITIVE OUTPUTS AND SYNCHRONOUS AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 9 INPUT
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 26.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOL
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804833
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004605744
NSN
5962-00-460-5744
MFG
NAI TECHNOLOGIES INC
Description
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.291 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 SHIFT REGISTER, UNIVERSAL
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND ASYNCHRONOUS AND RESETTABLE AND COMPLEMENTARY OUTPUTS AND HIGH SPEED AND POSITIVE OUTPUTS AND SYNCHRONOUS AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 9 INPUT
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 26.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOL
Related Searches:
9300DC
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004605744
NSN
5962-00-460-5744
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.291 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 SHIFT REGISTER, UNIVERSAL
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND ASYNCHRONOUS AND RESETTABLE AND COMPLEMENTARY OUTPUTS AND HIGH SPEED AND POSITIVE OUTPUTS AND SYNCHRONOUS AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 9 INPUT
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 26.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOL
Related Searches:
9300PC
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004605744
NSN
5962-00-460-5744
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.291 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 SHIFT REGISTER, UNIVERSAL
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND ASYNCHRONOUS AND RESETTABLE AND COMPLEMENTARY OUTPUTS AND HIGH SPEED AND POSITIVE OUTPUTS AND SYNCHRONOUS AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 9 INPUT
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 26.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOL
