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5961-00-519-3485
20 Products
2N3558
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961005193485
NSN
5961-00-519-3485
2N3558
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961005193485
NSN
5961-00-519-3485
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL HEIGHT: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
1N4571
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005193489
NSN
5961-00-519-3489
MFG
FREESCALE SEMICONDUCTOR INC.
Description
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.104 INCHES MAXIMUM
OVERALL HEIGHT: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
SCS204571
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005193489
NSN
5961-00-519-3489
MFG
MORS TECHNOLOGIES
Description
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.104 INCHES MAXIMUM
OVERALL HEIGHT: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
1N5289
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005193586
NSN
5961-00-519-3586
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
3180007-7
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005193586
NSN
5961-00-519-3586
MFG
ALLIED-SIGNAL INC DBA ALLIED-SIGNAL AEROSPACE CO ELECTRODYNAMICS DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
843-528-9X
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005193586
NSN
5961-00-519-3586
843-528-9X
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005193586
NSN
5961-00-519-3586
MFG
AMETEK PROGRAMMABLE POWER INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1U3190
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961005193595
NSN
5961-00-519-3595
1U3190
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961005193595
NSN
5961-00-519-3595
MFG
FREESCALE SEMICONDUCTOR INC.
Description
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.104 INCHES MAXIMUM
OVERALL HEIGHT: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
1N458
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005196178
NSN
5961-00-519-6178
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N458 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
2133296
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005196178
NSN
5961-00-519-6178
MFG
ITT CORPORATION DBA ITT COMMUNICATIONS SYSTEMS
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N458 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
248C10812
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005196178
NSN
5961-00-519-6178
MFG
GENERAL DYNAMICS C4 SYSTEMS INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N458 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
025-3-01-065
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005196524
NSN
5961-00-519-6524
025-3-01-065
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005196524
NSN
5961-00-519-6524
MFG
L-3 COMMUNICATIONS CORPORATION DBA L3 COMMUNICATION AVIATION RECORDERS DIVISION DIV L3 COMMUNICATIONS CORPORATION AVIATION RECORDERS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.2 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
81-183
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005196524
NSN
5961-00-519-6524
MFG
EATON CORP ELECTRONIC INSTRUMENTATION DIV LOS ANGELES PLANT
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.2 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
843-500-XX
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005196524
NSN
5961-00-519-6524
843-500-XX
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005196524
NSN
5961-00-519-6524
MFG
AMETEK PROGRAMMABLE POWER INC.
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.2 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
MZ500-11
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005196524
NSN
5961-00-519-6524
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.2 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
054-3-08-008
TRANSISTOR
NSN, MFG P/N
5961005196573
NSN
5961-00-519-6573
MFG
L-3 COMMUNICATIONS CORPORATION DBA L3 COMMUNICATION AVIATION RECORDERS DIVISION DIV L3 COMMUNICATIONS CORPORATION AVIATION RECORDERS DIVISION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
SFB4832
TRANSISTOR
NSN, MFG P/N
5961005196573
NSN
5961-00-519-6573
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
00614-0086-0
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005196977
NSN
5961-00-519-6977
00614-0086-0
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005196977
NSN
5961-00-519-6977
MFG
ELECTRONIC ASSOCIATES INC
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM SOURCE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.375 INCHES NOMINAL
OVERALL LENGTH: 0.725 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE1619 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.620 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
10516335
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005196977
NSN
5961-00-519-6977
MFG
U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM SOURCE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.375 INCHES NOMINAL
OVERALL LENGTH: 0.725 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE1619 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.620 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1N538
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005196977
NSN
5961-00-519-6977
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM SOURCE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.375 INCHES NOMINAL
OVERALL LENGTH: 0.725 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE1619 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.620 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
2156251
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005196977
NSN
5961-00-519-6977
MFG
ITT INDUSTRIES INC
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM SOURCE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.375 INCHES NOMINAL
OVERALL LENGTH: 0.725 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE1619 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.620 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
