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5962-00-991-8511

20 Products

11603854

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009918511

NSN

5962-00-991-8511

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11603854

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009918511

NSN

5962-00-991-8511

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 FLIP-FLOP, D-TYPE
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND LOW POWER AND POSITIVE OUTPUTS AND W/STORAGE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 250.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: RESISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS

221G3032

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009918511

NSN

5962-00-991-8511

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221G3032

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009918511

NSN

5962-00-991-8511

MFG

TARGET CORPORATION DBA TARGET

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 FLIP-FLOP, D-TYPE
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND LOW POWER AND POSITIVE OUTPUTS AND W/STORAGE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 250.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: RESISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS

913HM

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009918511

NSN

5962-00-991-8511

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913HM

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009918511

NSN

5962-00-991-8511

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 FLIP-FLOP, D-TYPE
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND LOW POWER AND POSITIVE OUTPUTS AND W/STORAGE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 250.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: RESISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS

MC913G

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009918511

NSN

5962-00-991-8511

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MC913G

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009918511

NSN

5962-00-991-8511

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 FLIP-FLOP, D-TYPE
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND LOW POWER AND POSITIVE OUTPUTS AND W/STORAGE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 250.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: RESISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS

134077

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009918524

NSN

5962-00-991-8524

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134077

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009918524

NSN

5962-00-991-8524

MFG

NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION

Description

BODY HEIGHT: 0.050 INCHES MINIMUM AND 0.065 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-86 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND-NOR
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND MEDIUM SPEED AND MEDIUM POWER AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 34.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 25.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND

2600-1280

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009918524

NSN

5962-00-991-8524

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2600-1280

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009918524

NSN

5962-00-991-8524

MFG

WHITTAKER CONTROLS INC.

Description

BODY HEIGHT: 0.050 INCHES MINIMUM AND 0.065 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-86 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND-NOR
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND MEDIUM SPEED AND MEDIUM POWER AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 34.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 25.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND

2600-1280FIG2

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009918524

NSN

5962-00-991-8524

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2600-1280FIG2

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009918524

NSN

5962-00-991-8524

MFG

WHITTAKER CONTROLS INC.

Description

BODY HEIGHT: 0.050 INCHES MINIMUM AND 0.065 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-86 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND-NOR
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND MEDIUM SPEED AND MEDIUM POWER AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 34.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 25.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND

702089-00-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009918524

NSN

5962-00-991-8524

View More Info

702089-00-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009918524

NSN

5962-00-991-8524

MFG

WHITTAKER CONTROLS INC.

Description

BODY HEIGHT: 0.050 INCHES MINIMUM AND 0.065 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-86 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND-NOR
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND MEDIUM SPEED AND MEDIUM POWER AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 34.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 25.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND

G000371-930

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009918524

NSN

5962-00-991-8524

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G000371-930

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009918524

NSN

5962-00-991-8524

MFG

L-3 COMMUNICATIONS CORPORATION D IV INTEGRATED SYSTEMS - GREENVILLE

Description

BODY HEIGHT: 0.050 INCHES MINIMUM AND 0.065 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-86 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND-NOR
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND MEDIUM SPEED AND MEDIUM POWER AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 34.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 25.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND

PL930-51

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009918524

NSN

5962-00-991-8524

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PL930-51

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009918524

NSN

5962-00-991-8524

MFG

PHILCO-FORD CORP MICROELECTRONICS DIV

Description

BODY HEIGHT: 0.050 INCHES MINIMUM AND 0.065 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-86 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND-NOR
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND MEDIUM SPEED AND MEDIUM POWER AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 34.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 25.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND

PL9930-51

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009918524

NSN

5962-00-991-8524

View More Info

PL9930-51

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009918524

NSN

5962-00-991-8524

MFG

PHILCO-FORD CORP MICROELECTRONICS DIV

Description

BODY HEIGHT: 0.050 INCHES MINIMUM AND 0.065 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-86 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND-NOR
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND MEDIUM SPEED AND MEDIUM POWER AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 34.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 25.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND

SC4200F

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009918524

NSN

5962-00-991-8524

View More Info

SC4200F

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009918524

NSN

5962-00-991-8524

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.050 INCHES MINIMUM AND 0.065 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-86 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND-NOR
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND MEDIUM SPEED AND MEDIUM POWER AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 34.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 25.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND

SN15930R06

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009918524

NSN

5962-00-991-8524

View More Info

SN15930R06

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009918524

NSN

5962-00-991-8524

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.050 INCHES MINIMUM AND 0.065 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-86 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND-NOR
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND MEDIUM SPEED AND MEDIUM POWER AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 34.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 25.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND

SW930-1F

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009918524

NSN

5962-00-991-8524

View More Info

SW930-1F

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009918524

NSN

5962-00-991-8524

MFG

HERLEY CHICAGO DBA STEWART WARNER ELECTRONICS

Description

BODY HEIGHT: 0.050 INCHES MINIMUM AND 0.065 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-86 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND-NOR
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND MEDIUM SPEED AND MEDIUM POWER AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 34.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 25.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND

U3I993050X

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009918524

NSN

5962-00-991-8524

View More Info

U3I993050X

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009918524

NSN

5962-00-991-8524

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.050 INCHES MINIMUM AND 0.065 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-86 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND-NOR
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND MEDIUM SPEED AND MEDIUM POWER AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 34.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 25.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND

U3I993051X

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009918524

NSN

5962-00-991-8524

View More Info

U3I993051X

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009918524

NSN

5962-00-991-8524

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.050 INCHES MINIMUM AND 0.065 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-86 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND-NOR
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND MEDIUM SPEED AND MEDIUM POWER AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 34.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 25.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND

2600-1300

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009918559

NSN

5962-00-991-8559

View More Info

2600-1300

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009918559

NSN

5962-00-991-8559

MFG

WHITTAKER CONTROLS INC.

Description

BODY HEIGHT: 0.050 INCHES MINIMUM AND 0.065 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-86 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 FLIP-FLOP, J-K/R-S, CLOCKED
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND W/ENABLE AND POSITIVE OUTPUTS AND EDGE TRIGGERED
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 7 INPUT
MAXIMUM POWER DISSIPATION RATING: 55.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OU

2600-1300FIG2

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009918559

NSN

5962-00-991-8559

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2600-1300FIG2

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009918559

NSN

5962-00-991-8559

MFG

WHITTAKER CONTROLS INC.

Description

BODY HEIGHT: 0.050 INCHES MINIMUM AND 0.065 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-86 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 FLIP-FLOP, J-K/R-S, CLOCKED
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND W/ENABLE AND POSITIVE OUTPUTS AND EDGE TRIGGERED
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 7 INPUT
MAXIMUM POWER DISSIPATION RATING: 55.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OU

931FMQB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009918559

NSN

5962-00-991-8559

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931FMQB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009918559

NSN

5962-00-991-8559

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.050 INCHES MINIMUM AND 0.065 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-86 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 FLIP-FLOP, J-K/R-S, CLOCKED
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND W/ENABLE AND POSITIVE OUTPUTS AND EDGE TRIGGERED
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 7 INPUT
MAXIMUM POWER DISSIPATION RATING: 55.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OU

MC831F

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009918559

NSN

5962-00-991-8559

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MC831F

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009918559

NSN

5962-00-991-8559

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.050 INCHES MINIMUM AND 0.065 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-86 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 FLIP-FLOP, J-K/R-S, CLOCKED
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND W/ENABLE AND POSITIVE OUTPUTS AND EDGE TRIGGERED
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 7 INPUT
MAXIMUM POWER DISSIPATION RATING: 55.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OU