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5962-01-006-0182

20 Products

403560-30

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010060182

NSN

5962-01-006-0182

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403560-30

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010060182

NSN

5962-01-006-0182

MFG

TARGET CORPORATION DBA TARGET

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND W/TOTEM POLE OUTPUT AND EDGE TRIGGERED AND NEGATIVE EDGE TRIGGERED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 40.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD

538706-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010060182

NSN

5962-01-006-0182

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538706-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010060182

NSN

5962-01-006-0182

MFG

RAYTHEON COMPANY

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND W/TOTEM POLE OUTPUT AND EDGE TRIGGERED AND NEGATIVE EDGE TRIGGERED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 40.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD

DM54132J883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010060182

NSN

5962-01-006-0182

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DM54132J883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010060182

NSN

5962-01-006-0182

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND W/TOTEM POLE OUTPUT AND EDGE TRIGGERED AND NEGATIVE EDGE TRIGGERED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 40.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD

SN74132J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010060182

NSN

5962-01-006-0182

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SN74132J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010060182

NSN

5962-01-006-0182

MFG

JOINT ELECTRON DEVICE ENGINEERING COUNCIL

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND W/TOTEM POLE OUTPUT AND EDGE TRIGGERED AND NEGATIVE EDGE TRIGGERED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 40.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD

SNC54132J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010060182

NSN

5962-01-006-0182

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SNC54132J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010060182

NSN

5962-01-006-0182

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND W/TOTEM POLE OUTPUT AND EDGE TRIGGERED AND NEGATIVE EDGE TRIGGERED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 40.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD

5339-096054-510

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010060183

NSN

5962-01-006-0183

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5339-096054-510

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010060183

NSN

5962-01-006-0183

MFG

AAI CORPORATION

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 3 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND HIGH SPEED AND SCHOTTKY AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 30.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 DRAWING
TIME RATING PER CHACTERISTIC: 4.50 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 5.

537809-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010060183

NSN

5962-01-006-0183

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537809-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010060183

NSN

5962-01-006-0183

MFG

RAYTHEON COMPANY

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 3 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND HIGH SPEED AND SCHOTTKY AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 30.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 DRAWING
TIME RATING PER CHACTERISTIC: 4.50 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 5.

725000-89

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010060183

NSN

5962-01-006-0183

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725000-89

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010060183

NSN

5962-01-006-0183

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 3 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND HIGH SPEED AND SCHOTTKY AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 30.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 DRAWING
TIME RATING PER CHACTERISTIC: 4.50 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 5.

985193-010

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010060183

NSN

5962-01-006-0183

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985193-010

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010060183

NSN

5962-01-006-0183

MFG

TITAN CORP THE

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 3 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND HIGH SPEED AND SCHOTTKY AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 30.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 DRAWING
TIME RATING PER CHACTERISTIC: 4.50 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 5.

9S10DMQB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010060183

NSN

5962-01-006-0183

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9S10DMQB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010060183

NSN

5962-01-006-0183

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 3 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND HIGH SPEED AND SCHOTTKY AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 30.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 DRAWING
TIME RATING PER CHACTERISTIC: 4.50 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 5.

RB54S10F

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010060183

NSN

5962-01-006-0183

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RB54S10F

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010060183

NSN

5962-01-006-0183

MFG

PHILIPS SEMICONDUCTORS INC

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 3 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND HIGH SPEED AND SCHOTTKY AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 30.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 DRAWING
TIME RATING PER CHACTERISTIC: 4.50 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 5.

SN74S10J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010060183

NSN

5962-01-006-0183

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SN74S10J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010060183

NSN

5962-01-006-0183

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 3 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND HIGH SPEED AND SCHOTTKY AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 30.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 DRAWING
TIME RATING PER CHACTERISTIC: 4.50 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 5.

SNC54S10J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010060183

NSN

5962-01-006-0183

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SNC54S10J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010060183

NSN

5962-01-006-0183

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 3 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND HIGH SPEED AND SCHOTTKY AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 30.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 DRAWING
TIME RATING PER CHACTERISTIC: 4.50 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 5.

SNC54S10J00

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010060183

NSN

5962-01-006-0183

View More Info

SNC54S10J00

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010060183

NSN

5962-01-006-0183

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 3 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND HIGH SPEED AND SCHOTTKY AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 30.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 DRAWING
TIME RATING PER CHACTERISTIC: 4.50 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 5.

537810-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010060597

NSN

5962-01-006-0597

View More Info

537810-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010060597

NSN

5962-01-006-0597

MFG

RAYTHEON COMPANY

Description

BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 INVERTER
FEATURES PROVIDED: HERMETICALLY SEALED AND SCHOTTKY
III OVERALL HEIGHT: 0.325 INCHES NOMINAL
INCLOSURE CONFIGURATION: DUAL-IN-LINE
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS

SNC54JS04J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010060597

NSN

5962-01-006-0597

View More Info

SNC54JS04J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010060597

NSN

5962-01-006-0597

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 INVERTER
FEATURES PROVIDED: HERMETICALLY SEALED AND SCHOTTKY
III OVERALL HEIGHT: 0.325 INCHES NOMINAL
INCLOSURE CONFIGURATION: DUAL-IN-LINE
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS

131023-001

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010060986

NSN

5962-01-006-0986

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131023-001

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010060986

NSN

5962-01-006-0986

MFG

HARRIS CORPORATION DBA GOVERNMENT COMMUNICATIONS SYSTEMS DIVISION DIV GOVERNMENT COMMUNICATIONS SYSTEMS DIVISION

Description

BODY HEIGHT: 0.140 INCHES NOMINAL
BODY LENGTH: 0.725 INCHES NOMINAL
BODY WIDTH: 0.280 INCHES NOMINAL
DESIGN CONTROL REFERENCE: LM308J
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 2 INPUT
MANUFACTURERS CODE: 27014
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
THE MANUFACTURERS DATA:

143503045

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010060986

NSN

5962-01-006-0986

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143503045

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010060986

NSN

5962-01-006-0986

MFG

EATON CORPORATION

Description

BODY HEIGHT: 0.140 INCHES NOMINAL
BODY LENGTH: 0.725 INCHES NOMINAL
BODY WIDTH: 0.280 INCHES NOMINAL
DESIGN CONTROL REFERENCE: LM308J
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 2 INPUT
MANUFACTURERS CODE: 27014
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
THE MANUFACTURERS DATA:

LM308D

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010060986

NSN

5962-01-006-0986

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LM308D

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010060986

NSN

5962-01-006-0986

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

BODY HEIGHT: 0.140 INCHES NOMINAL
BODY LENGTH: 0.725 INCHES NOMINAL
BODY WIDTH: 0.280 INCHES NOMINAL
DESIGN CONTROL REFERENCE: LM308J
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 2 INPUT
MANUFACTURERS CODE: 27014
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
THE MANUFACTURERS DATA:

LM308J

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010060986

NSN

5962-01-006-0986

View More Info

LM308J

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010060986

NSN

5962-01-006-0986

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

BODY HEIGHT: 0.140 INCHES NOMINAL
BODY LENGTH: 0.725 INCHES NOMINAL
BODY WIDTH: 0.280 INCHES NOMINAL
DESIGN CONTROL REFERENCE: LM308J
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 2 INPUT
MANUFACTURERS CODE: 27014
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
THE MANUFACTURERS DATA: