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5962-01-063-6658

20 Products

11-CD4046AE

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010636658

NSN

5962-01-063-6658

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11-CD4046AE

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010636658

NSN

5962-01-063-6658

MFG

STONER COMMUNICATIONS INC

Description

BODY HEIGHT: 0.165 INCHES MAXIMUM
BODY LENGTH: 0.795 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-001AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 PHASE LOCKED LOOP
FEATURES PROVIDED: LOW POWER AND HERMETICALLY SEALED AND W/ENABLE AND HIGH IMPEDANCE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PE

1086962P6

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010636644

NSN

5962-01-063-6644

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1086962P6

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010636644

NSN

5962-01-063-6644

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 130.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND SCHOTTKY AND BIPOLAR AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 739.0 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.

1089499T2

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010636644

NSN

5962-01-063-6644

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1089499T2

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010636644

NSN

5962-01-063-6644

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 130.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND SCHOTTKY AND BIPOLAR AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 739.0 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.

M38510/20301BEA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010636644

NSN

5962-01-063-6644

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M38510/20301BEA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010636644

NSN

5962-01-063-6644

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 130.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND SCHOTTKY AND BIPOLAR AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 739.0 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.

ROM/PROM FAMILY 021

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010636644

NSN

5962-01-063-6644

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ROM/PROM FAMILY 021

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010636644

NSN

5962-01-063-6644

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 130.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND SCHOTTKY AND BIPOLAR AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 739.0 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.

0310269P001

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010636645

NSN

5962-01-063-6645

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0310269P001

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010636645

NSN

5962-01-063-6645

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 130.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND SCHOTTKY AND BIPOLAR AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 739.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5

1086962P007

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010636645

NSN

5962-01-063-6645

View More Info

1086962P007

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010636645

NSN

5962-01-063-6645

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 130.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND SCHOTTKY AND BIPOLAR AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 739.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5

1086962P7

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010636645

NSN

5962-01-063-6645

View More Info

1086962P7

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010636645

NSN

5962-01-063-6645

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 130.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND SCHOTTKY AND BIPOLAR AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 739.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5

1089499T1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010636645

NSN

5962-01-063-6645

View More Info

1089499T1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010636645

NSN

5962-01-063-6645

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 130.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND SCHOTTKY AND BIPOLAR AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 739.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5

M38510/20301BEA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010636645

NSN

5962-01-063-6645

View More Info

M38510/20301BEA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010636645

NSN

5962-01-063-6645

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 130.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND SCHOTTKY AND BIPOLAR AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 739.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5

ROM/PROM FAMILY 021

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010636645

NSN

5962-01-063-6645

View More Info

ROM/PROM FAMILY 021

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010636645

NSN

5962-01-063-6645

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 130.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND SCHOTTKY AND BIPOLAR AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 739.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5

1086963P005

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010636646

NSN

5962-01-063-6646

View More Info

1086963P005

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010636646

NSN

5962-01-063-6646

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

DESIGN CONTROL REFERENCE: 1086963P5
FEATURES PROVIDED: PROGRAMMED
III END ITEM IDENTIFICATION: A-10
MANUFACTURERS CODE: 94117
THE MANUFACTURERS DATA:

1086963P5

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010636646

NSN

5962-01-063-6646

View More Info

1086963P5

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010636646

NSN

5962-01-063-6646

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

DESIGN CONTROL REFERENCE: 1086963P5
FEATURES PROVIDED: PROGRAMMED
III END ITEM IDENTIFICATION: A-10
MANUFACTURERS CODE: 94117
THE MANUFACTURERS DATA:

1089498T3

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010636646

NSN

5962-01-063-6646

View More Info

1089498T3

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010636646

NSN

5962-01-063-6646

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

DESIGN CONTROL REFERENCE: 1086963P5
FEATURES PROVIDED: PROGRAMMED
III END ITEM IDENTIFICATION: A-10
MANUFACTURERS CODE: 94117
THE MANUFACTURERS DATA:

53S240J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010636646

NSN

5962-01-063-6646

View More Info

53S240J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010636646

NSN

5962-01-063-6646

MFG

MMI/AMD

Description

DESIGN CONTROL REFERENCE: 1086963P5
FEATURES PROVIDED: PROGRAMMED
III END ITEM IDENTIFICATION: A-10
MANUFACTURERS CODE: 94117
THE MANUFACTURERS DATA:

MM6305-1J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010636646

NSN

5962-01-063-6646

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MM6305-1J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010636646

NSN

5962-01-063-6646

MFG

MMI/AMD

Description

DESIGN CONTROL REFERENCE: 1086963P5
FEATURES PROVIDED: PROGRAMMED
III END ITEM IDENTIFICATION: A-10
MANUFACTURERS CODE: 94117
THE MANUFACTURERS DATA:

029-240-02

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010636655

NSN

5962-01-063-6655

View More Info

029-240-02

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010636655

NSN

5962-01-063-6655

MFG

AMPHENOL CORP SPECTRA-STRIP/ITD

Description

BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.735 INCHES MAXIMUM
BODY WIDTH: 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-5 MIL-M-38510
III END ITEM IDENTIFICATION: F-16
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 5 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS

7890814-011

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010636655

NSN

5962-01-063-6655

View More Info

7890814-011

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010636655

NSN

5962-01-063-6655

MFG

L-3 COMMUNICATIONS ELECTRONIC SYSTEMS INC

Description

BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.735 INCHES MAXIMUM
BODY WIDTH: 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-5 MIL-M-38510
III END ITEM IDENTIFICATION: F-16
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 5 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS

7890815-011

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010636656

NSN

5962-01-063-6656

View More Info

7890815-011

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010636656

NSN

5962-01-063-6656

MFG

L-3 COMMUNICATIONS ELECTRONIC SYSTEMS INC

Description

BODY LENGTH: 0.375 INCHES NOMINAL
BODY WIDTH: 0.250 INCHES NOMINAL
CASE OUTLINE SOURCE AND DESIGNATOR: F-5 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 4 SWITCH, SOURCE
III END ITEM IDENTIFICATION: F-16
INCLOSURE CONFIGURATION: FLAT PACK
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS

SNJ55327SB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010636656

NSN

5962-01-063-6656

View More Info

SNJ55327SB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010636656

NSN

5962-01-063-6656

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY LENGTH: 0.375 INCHES NOMINAL
BODY WIDTH: 0.250 INCHES NOMINAL
CASE OUTLINE SOURCE AND DESIGNATOR: F-5 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 4 SWITCH, SOURCE
III END ITEM IDENTIFICATION: F-16
INCLOSURE CONFIGURATION: FLAT PACK
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS