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5962-01-093-8373

20 Products

5L5441-016-55

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010938373

NSN

5962-01-093-8373

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5L5441-016-55

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010938373

NSN

5962-01-093-8373

MFG

EADS DEUTSCHLAND GMBH -VERTEIDIGUNG UND ZIVILE SYSTEME-

N74LS375B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010938373

NSN

5962-01-093-8373

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N74LS375B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010938373

NSN

5962-01-093-8373

MFG

PHILIPS SEMICONDUCTORS INC

586-152

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010938374

NSN

5962-01-093-8374

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586-152

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010938374

NSN

5962-01-093-8374

MFG

AMPEX SYSTEMS CORP

586-155

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010938375

NSN

5962-01-093-8375

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586-155

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010938375

NSN

5962-01-093-8375

MFG

AMPEX SYSTEMS CORP

Description

FEATURES PROVIDED: PROGRAMMABLE AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC

586-153

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010938376

NSN

5962-01-093-8376

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586-153

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010938376

NSN

5962-01-093-8376

MFG

AMPEX SYSTEMS CORP

586-184

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010938377

NSN

5962-01-093-8377

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586-184

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010938377

NSN

5962-01-093-8377

MFG

AMPEX SYSTEMS CORP

587-302

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010938378

NSN

5962-01-093-8378

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587-302

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010938378

NSN

5962-01-093-8378

MFG

AMPEX SYSTEMS CORP

586-870

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010938379

NSN

5962-01-093-8379

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586-870

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010938379

NSN

5962-01-093-8379

MFG

AMPEX SYSTEMS CORP

9412

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010938805

NSN

5962-01-093-8805

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9412

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010938805

NSN

5962-01-093-8805

MFG

OPTICAL ELECTRONICS INC DBA O E I

Description

BODY HEIGHT: 0.310 INCHES NOMINAL
BODY LENGTH: 1.000 INCHES NOMINAL
BODY WIDTH: 1.000 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HYBRID AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 1050.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 70.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 100.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 15 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS NOMINAL POWER SOURCE

DMS 90159B

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010938806

NSN

5962-01-093-8806

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DMS 90159B

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010938806

NSN

5962-01-093-8806

MFG

DLA LAND AND MARITIME

Description

BODY HEIGHT: 0.135 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
BODY LENGTH: 0.370 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: MONOLITHIC AND LOW POWER AND INTERNALLY COMPENSATED AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: DUAL 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 170.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 8 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 250.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.0 VOLTS MAXIMUM POWER SOURCE

MC1458SP1

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010938806

NSN

5962-01-093-8806

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MC1458SP1

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010938806

NSN

5962-01-093-8806

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.135 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
BODY LENGTH: 0.370 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: MONOLITHIC AND LOW POWER AND INTERNALLY COMPENSATED AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: DUAL 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 170.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 8 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 250.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.0 VOLTS MAXIMUM POWER SOURCE

1950152-100

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010938807

NSN

5962-01-093-8807

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1950152-100

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010938807

NSN

5962-01-093-8807

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.350 INCHES NOMINAL
BODY LENGTH: 1.575 INCHES NOMINAL
BODY WIDTH: 1.075 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 BUFFER
FEATURES PROVIDED: HYBRID AND W/SWITCH AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 0.7 WATTS
OPERATING TEMP RANGE: -54.0 TO 85.0 DEG CELSIUS
STORAGE TEMP RANGE: -62.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 15 PRINTED CIRCUIT
TEST DATA DOCUMENT: 80063-SM-C-800814 DRAWING
TIME RATING PER CHACTERISTIC: 100.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 100.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 16.5 VOLTS MAXIMUM POWER SOURCE

1950152-101

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010938807

NSN

5962-01-093-8807

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1950152-101

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010938807

NSN

5962-01-093-8807

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.350 INCHES NOMINAL
BODY LENGTH: 1.575 INCHES NOMINAL
BODY WIDTH: 1.075 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 BUFFER
FEATURES PROVIDED: HYBRID AND W/SWITCH AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 0.7 WATTS
OPERATING TEMP RANGE: -54.0 TO 85.0 DEG CELSIUS
STORAGE TEMP RANGE: -62.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 15 PRINTED CIRCUIT
TEST DATA DOCUMENT: 80063-SM-C-800814 DRAWING
TIME RATING PER CHACTERISTIC: 100.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 100.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 16.5 VOLTS MAXIMUM POWER SOURCE

1951483

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010938807

NSN

5962-01-093-8807

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1951483

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010938807

NSN

5962-01-093-8807

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.350 INCHES NOMINAL
BODY LENGTH: 1.575 INCHES NOMINAL
BODY WIDTH: 1.075 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 BUFFER
FEATURES PROVIDED: HYBRID AND W/SWITCH AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 0.7 WATTS
OPERATING TEMP RANGE: -54.0 TO 85.0 DEG CELSIUS
STORAGE TEMP RANGE: -62.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 15 PRINTED CIRCUIT
TEST DATA DOCUMENT: 80063-SM-C-800814 DRAWING
TIME RATING PER CHACTERISTIC: 100.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 100.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 16.5 VOLTS MAXIMUM POWER SOURCE

1951483-100

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010938807

NSN

5962-01-093-8807

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1951483-100

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010938807

NSN

5962-01-093-8807

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.350 INCHES NOMINAL
BODY LENGTH: 1.575 INCHES NOMINAL
BODY WIDTH: 1.075 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 BUFFER
FEATURES PROVIDED: HYBRID AND W/SWITCH AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 0.7 WATTS
OPERATING TEMP RANGE: -54.0 TO 85.0 DEG CELSIUS
STORAGE TEMP RANGE: -62.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 15 PRINTED CIRCUIT
TEST DATA DOCUMENT: 80063-SM-C-800814 DRAWING
TIME RATING PER CHACTERISTIC: 100.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 100.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 16.5 VOLTS MAXIMUM POWER SOURCE

SM-C-800814-1

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010938807

NSN

5962-01-093-8807

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SM-C-800814-1

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010938807

NSN

5962-01-093-8807

MFG

US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR

Description

BODY HEIGHT: 0.350 INCHES NOMINAL
BODY LENGTH: 1.575 INCHES NOMINAL
BODY WIDTH: 1.075 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 BUFFER
FEATURES PROVIDED: HYBRID AND W/SWITCH AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 0.7 WATTS
OPERATING TEMP RANGE: -54.0 TO 85.0 DEG CELSIUS
STORAGE TEMP RANGE: -62.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 15 PRINTED CIRCUIT
TEST DATA DOCUMENT: 80063-SM-C-800814 DRAWING
TIME RATING PER CHACTERISTIC: 100.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 100.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 16.5 VOLTS MAXIMUM POWER SOURCE

1950146-100

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010938810

NSN

5962-01-093-8810

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1950146-100

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010938810

NSN

5962-01-093-8810

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.350 INCHES NOMINAL
BODY LENGTH: 1.065 INCHES NOMINAL
BODY WIDTH: 1.065 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 OSCILLATOR
FEATURES PROVIDED: HERMETICALLY SEALED AND HYBRID AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 0.7 WATTS
OPERATING TEMP RANGE: -54.0 TO 85.0 DEG CELSIUS
STORAGE TEMP RANGE: -62.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 11 PRINTED CIRCUIT
TEST DATA DOCUMENT: 80063-SM-C-800811 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 16.5 VOLTS MAXIMUM POWER SOURCE

710297-66

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010938810

NSN

5962-01-093-8810

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710297-66

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010938810

NSN

5962-01-093-8810

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.350 INCHES NOMINAL
BODY LENGTH: 1.065 INCHES NOMINAL
BODY WIDTH: 1.065 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 OSCILLATOR
FEATURES PROVIDED: HERMETICALLY SEALED AND HYBRID AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 0.7 WATTS
OPERATING TEMP RANGE: -54.0 TO 85.0 DEG CELSIUS
STORAGE TEMP RANGE: -62.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 11 PRINTED CIRCUIT
TEST DATA DOCUMENT: 80063-SM-C-800811 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 16.5 VOLTS MAXIMUM POWER SOURCE

SM-C-800811-1

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010938810

NSN

5962-01-093-8810

View More Info

SM-C-800811-1

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010938810

NSN

5962-01-093-8810

MFG

US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR

Description

BODY HEIGHT: 0.350 INCHES NOMINAL
BODY LENGTH: 1.065 INCHES NOMINAL
BODY WIDTH: 1.065 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 OSCILLATOR
FEATURES PROVIDED: HERMETICALLY SEALED AND HYBRID AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 0.7 WATTS
OPERATING TEMP RANGE: -54.0 TO 85.0 DEG CELSIUS
STORAGE TEMP RANGE: -62.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 11 PRINTED CIRCUIT
TEST DATA DOCUMENT: 80063-SM-C-800811 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 16.5 VOLTS MAXIMUM POWER SOURCE

1820-0232

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010938814

NSN

5962-01-093-8814

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1820-0232

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010938814

NSN

5962-01-093-8814

MFG

AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER

Description

INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
MEMORY DEVICE TYPE: RAM
OUTPUT LOGIC FORM: P-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
TERMINAL SURFACE TREATMENT: SOLDER