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5962-01-117-2559
20 Products
6010340-002
INTEGRATED CIRCUIT
NSN, MFG P/N
5962011172559
NSN
5962-01-117-2559
MFG
BAE SYSTEMS NATIONAL SECURITY SOLUTIONS INC.
Description
INTEGRATED CIRCUIT
Related Searches:
S1307
INTEGRATED CIRCUIT
NSN, MFG P/N
5962011172559
NSN
5962-01-117-2559
MFG
INTRONICS INCORPORATED
Description
INTEGRATED CIRCUIT
Related Searches:
AD536J
MICROCIRCUIT
NSN, MFG P/N
5962011172588
NSN
5962-01-117-2588
MFG
ANALOG DEVICES INC. DIV CORPORATE HEADQUARTERS
Description
MICROCIRCUIT
Related Searches:
717199-7
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011172591
NSN
5962-01-117-2591
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 6 DRIVER, BUS
FEATURES PROVIDED: MONOLITHIC AND 3-STATE OUTPUT AND POSITIVE OUTPUTS
III OVERALL HEIGHT: 0.325 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 8 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 17.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 16.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
717317-2
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011172591
NSN
5962-01-117-2591
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 6 DRIVER, BUS
FEATURES PROVIDED: MONOLITHIC AND 3-STATE OUTPUT AND POSITIVE OUTPUTS
III OVERALL HEIGHT: 0.325 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 8 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 17.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 16.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
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SN89829J
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011172591
NSN
5962-01-117-2591
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 6 DRIVER, BUS
FEATURES PROVIDED: MONOLITHIC AND 3-STATE OUTPUT AND POSITIVE OUTPUTS
III OVERALL HEIGHT: 0.325 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 8 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 17.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 16.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
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347ML902
MICROCIRCUIT
NSN, MFG P/N
5962011172592
NSN
5962-01-117-2592
MFG
TELCOM SEMICONDUCTOR INC
Description
MICROCIRCUIT
Related Searches:
347ML902X
MICROCIRCUIT
NSN, MFG P/N
5962011172592
NSN
5962-01-117-2592
MFG
TELCOM SEMICONDUCTOR INC
Description
MICROCIRCUIT
Related Searches:
347ML902XA
MICROCIRCUIT
NSN, MFG P/N
5962011172592
NSN
5962-01-117-2592
MFG
ADELCO ELEKTRONIK GMBH
Description
MICROCIRCUIT
Related Searches:
301ML-902
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011172593
NSN
5962-01-117-2593
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND POWER
FEATURES PROVIDED: MONOLITHIC AND HIGH NOISE
III OVERALL HEIGHT: 0.325 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
Related Searches:
301ML902
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011172593
NSN
5962-01-117-2593
MFG
TELCOM SEMICONDUCTOR INC
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND POWER
FEATURES PROVIDED: MONOLITHIC AND HIGH NOISE
III OVERALL HEIGHT: 0.325 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
Related Searches:
301ML902X
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011172593
NSN
5962-01-117-2593
MFG
TELCOM SEMICONDUCTOR INC
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND POWER
FEATURES PROVIDED: MONOLITHIC AND HIGH NOISE
III OVERALL HEIGHT: 0.325 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
Related Searches:
301ML902XA
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011172593
NSN
5962-01-117-2593
MFG
ADELCO ELEKTRONIK GMBH
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND POWER
FEATURES PROVIDED: MONOLITHIC AND HIGH NOISE
III OVERALL HEIGHT: 0.325 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
Related Searches:
SM-C-800752-1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011172593
NSN
5962-01-117-2593
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND POWER
FEATURES PROVIDED: MONOLITHIC AND HIGH NOISE
III OVERALL HEIGHT: 0.325 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
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TC301
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011172593
NSN
5962-01-117-2593
MFG
SERTECH LABORATORIES INC
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND POWER
FEATURES PROVIDED: MONOLITHIC AND HIGH NOISE
III OVERALL HEIGHT: 0.325 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
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TSC301ML
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011172593
NSN
5962-01-117-2593
MFG
TELCOM SEMICONDUCTOR INC
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND POWER
FEATURES PROVIDED: MONOLITHIC AND HIGH NOISE
III OVERALL HEIGHT: 0.325 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
Related Searches:
325ML902
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011172594
NSN
5962-01-117-2594
MFG
TELCOM SEMICONDUCTOR INC
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 3-2-2-3 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 300.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
325ML902X
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011172594
NSN
5962-01-117-2594
MFG
ADELCO ELEKTRONIK GMBH
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 3-2-2-3 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 300.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
325ML902XA
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011172594
NSN
5962-01-117-2594
MFG
ADELCO ELEKTRONIK GMBH
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 3-2-2-3 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 300.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
SM-C-800761-1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011172594
NSN
5962-01-117-2594
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 3-2-2-3 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 300.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
