My Quote Request
No products added yet
5961-01-122-7176
20 Products
5328570
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011227176
NSN
5961-01-122-7176
5328570
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011227176
NSN
5961-01-122-7176
MFG
NAVAL SEA SYSTEMS COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 110.00 AMPERES MAXIMUM FORWARD CURRENT, TOTAL RMS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 2.577 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.063 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPNP
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD AND 1 UNINSULATED WIRE LEAD W/TERMINAL LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 700.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 700.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
28383-998P
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011226517
NSN
5961-01-122-6517
28383-998P
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011226517
NSN
5961-01-122-6517
MFG
MARCONI ELECTRONICS INC MARCONI INSTRUMENTS DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
28383/998
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011226517
NSN
5961-01-122-6517
MFG
AEROFLEX WICHITA INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
HP5082-180
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011226517
NSN
5961-01-122-6517
HP5082-180
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011226517
NSN
5961-01-122-6517
MFG
MASON MASTER LTD
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
28371-553P
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011226518
NSN
5961-01-122-6518
28371-553P
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011226518
NSN
5961-01-122-6518
MFG
AEROFLEX WICHITA INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
Z5B6-8
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011226518
NSN
5961-01-122-6518
MFG
SEMITRON INDUSTRIES LTD
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
566009020
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011226519
NSN
5961-01-122-6519
MFG
NORTHERN TELECOM INC NORTHEAST ELECTRONICS DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
28323-287
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011226522
NSN
5961-01-122-6522
MFG
AEROFLEX WICHITA INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
28372-587
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011226523
NSN
5961-01-122-6523
MFG
AEROFLEX WICHITA INC.
Description
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
III END ITEM IDENTIFICATION: HULL OBRP 03950
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
Z0B18
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011226523
NSN
5961-01-122-6523
MFG
SEMITRON INDUSTRIES LTD
Description
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
III END ITEM IDENTIFICATION: HULL OBRP 03950
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
4801-02-0003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011226524
NSN
5961-01-122-6524
4801-02-0003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011226524
NSN
5961-01-122-6524
MFG
WAVETEK RF PRODUCTS INC
Description
CURRENT RATING PER CHARACTERISTIC: 21.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: HULL OBRP E/I FSCM 03950
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.072 INCHES NOMINAL
OVERALL LENGTH: 0.090 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.800 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.6 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
HW12B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011226524
NSN
5961-01-122-6524
MFG
MICROSEMI CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 21.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: HULL OBRP E/I FSCM 03950
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.072 INCHES NOMINAL
OVERALL LENGTH: 0.090 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.800 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.6 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
IRF153
TRANSISTOR
NSN, MFG P/N
5961011226714
NSN
5961-01-122-6714
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 24.00 AMPERES MAXIMUM DRAIN CURRENT AND 60.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: 5865-01-096-4994
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-204
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.830 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
402791
TRANSISTOR
NSN, MFG P/N
5961011227170
NSN
5961-01-122-7170
MFG
TARGET CORPORATION DBA TARGET
Description
(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 0.5 GRAMS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: HULL OBRP 03950
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 12909-402791 DRAWING
Related Searches:
MA42612
TRANSISTOR
NSN, MFG P/N
5961011227170
NSN
5961-01-122-7170
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 0.5 GRAMS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: HULL OBRP 03950
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 12909-402791 DRAWING
Related Searches:
130-634-00
TRANSISTOR
NSN, MFG P/N
5961011227171
NSN
5961-01-122-7171
MFG
GENERAL INSTRUMENT CORPORATION DBA MOTOROLA DIV CONNECTED HOME SOLUTION
Description
CURRENT RATING PER CHARACTERISTIC: 35.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: HULL OBRP 03950
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 12.0 MAXIM
Related Searches:
A401
TRANSISTOR
NSN, MFG P/N
5961011227171
NSN
5961-01-122-7171
MFG
PHILIPS CIRCUIT ASSEMBLIES
Description
CURRENT RATING PER CHARACTERISTIC: 35.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: HULL OBRP 03950
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 12.0 MAXIM
Related Searches:
0122-0043
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011227172
NSN
5961-01-122-7172
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
SMV315-043
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011227172
NSN
5961-01-122-7172
SMV315-043
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011227172
NSN
5961-01-122-7172
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
XN4454GE
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011227175
NSN
5961-01-122-7175
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
SEMICONDUCTOR DEVICE,DIODE
