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5962-01-161-7528
20 Products
559SD/BIN
MICROCIRCUIT,DIGITAL-LINEAR
NSN, MFG P/N
5962011617528
NSN
5962-01-161-7528
559SD/BIN
MICROCIRCUIT,DIGITAL-LINEAR
NSN, MFG P/N
5962011617528
NSN
5962-01-161-7528
MFG
ANALOG DEVICES INC. DIV CORPORATE HEADQUARTERS
Description
(NON-CORE DATA) BIT QUANTITY: 8
BODY HEIGHT: 0.205 INCHES NOMINAL
BODY LENGTH: 0.825 INCHES MAXIMUM
BODY WIDTH: 0.325 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, DIGITAL TO ANALOG
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND HIGH SPEED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND METAL
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 330.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 57057-8855400256 DRAWING
TIME RATING PER CHACTERISTIC: 150.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 150.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
DESC8405601CX
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011617520
NSN
5962-01-161-7520
MFG
DLA LAND AND MARITIME
Description
BODY HEIGHT: 0.160 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, D-TYPE
FEATURES PROVIDED: HERMETICALLY SEALED AND LOW POWER AND MEDIUM SPEED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.3 VOLTS MAXIMUM POWER SOURCE
Related Searches:
DR221-1052-001/1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011617520
NSN
5962-01-161-7520
DR221-1052-001/1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011617520
NSN
5962-01-161-7520
MFG
SELEX GALILEO LTD
Description
BODY HEIGHT: 0.160 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, D-TYPE
FEATURES PROVIDED: HERMETICALLY SEALED AND LOW POWER AND MEDIUM SPEED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.3 VOLTS MAXIMUM POWER SOURCE
Related Searches:
DR221-1052-001H
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011617520
NSN
5962-01-161-7520
MFG
SELEX GALILEO LTD
Description
BODY HEIGHT: 0.160 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, D-TYPE
FEATURES PROVIDED: HERMETICALLY SEALED AND LOW POWER AND MEDIUM SPEED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.3 VOLTS MAXIMUM POWER SOURCE
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MC74HC74N
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011617520
NSN
5962-01-161-7520
MFG
FREESCALE SEMICONDUCTOR INC.
Description
BODY HEIGHT: 0.160 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, D-TYPE
FEATURES PROVIDED: HERMETICALLY SEALED AND LOW POWER AND MEDIUM SPEED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.3 VOLTS MAXIMUM POWER SOURCE
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MM54HC74J
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011617520
NSN
5962-01-161-7520
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.160 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, D-TYPE
FEATURES PROVIDED: HERMETICALLY SEALED AND LOW POWER AND MEDIUM SPEED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.3 VOLTS MAXIMUM POWER SOURCE
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3332926
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011617521
NSN
5962-01-161-7521
MFG
HONEYWELL INTERNATIONAL INC . DBA HONEYWELL DIV AEROSPACE - TEMPE WEST WARNER ROAD
Description
BODY HEIGHT: 0.140 INCHES NOMINAL
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.320 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 SWITCH, BILATERAL
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND DYNAMIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 77068-3332926 DRAWING
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.5 VOLTS MAXIMUM POWER SOURCE
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BCL4066BC
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011617521
NSN
5962-01-161-7521
MFG
ALLEGRO MICROSYSTEMS INC
Description
BODY HEIGHT: 0.140 INCHES NOMINAL
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.320 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 SWITCH, BILATERAL
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND DYNAMIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 77068-3332926 DRAWING
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.5 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011617521
NSN
5962-01-161-7521
MFG
INTERSIL CORPORATION
Description
BODY HEIGHT: 0.140 INCHES NOMINAL
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.320 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 SWITCH, BILATERAL
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND DYNAMIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 77068-3332926 DRAWING
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
CD4066BMJ/883
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011617521
NSN
5962-01-161-7521
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.140 INCHES NOMINAL
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.320 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 SWITCH, BILATERAL
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND DYNAMIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 77068-3332926 DRAWING
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.5 VOLTS MAXIMUM POWER SOURCE
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5341-1D
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011617524
NSN
5962-01-161-7524
MFG
MMI/AMD
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.115 INCHES NOMINAL
BODY LENGTH: 1.180 INCHES MINIMUM AND 1.220 INCHES MAXIMUM
BODY WIDTH: 0.495 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND PROGRAMMABLE AND STATIC OPERATION AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 853.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 57057-8855400351 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
8855400351-8
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011617524
NSN
5962-01-161-7524
MFG
NAVCOM DEFENSE ELECTRONICS INC.
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.115 INCHES NOMINAL
BODY LENGTH: 1.180 INCHES MINIMUM AND 1.220 INCHES MAXIMUM
BODY WIDTH: 0.495 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND PROGRAMMABLE AND STATIC OPERATION AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 853.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 57057-8855400351 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
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8866300002-8
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011617524
NSN
5962-01-161-7524
MFG
NAVCOM DEFENSE ELECTRONICS INC.
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.115 INCHES NOMINAL
BODY LENGTH: 1.180 INCHES MINIMUM AND 1.220 INCHES MAXIMUM
BODY WIDTH: 0.495 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND PROGRAMMABLE AND STATIC OPERATION AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 853.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 57057-8855400351 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
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NSN, MFG P/N
5962011617524
NSN
5962-01-161-7524
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011617524
NSN
5962-01-161-7524
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.115 INCHES NOMINAL
BODY LENGTH: 1.180 INCHES MINIMUM AND 1.220 INCHES MAXIMUM
BODY WIDTH: 0.495 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND PROGRAMMABLE AND STATIC OPERATION AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 853.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 57057-8855400351 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
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5341-1D
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011617525
NSN
5962-01-161-7525
MFG
MMI/AMD
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.115 INCHES NOMINAL
BODY LENGTH: 1.180 INCHES MINIMUM AND 1.220 INCHES MAXIMUM
BODY WIDTH: 0.495 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND PROGRAMMABLE AND STATIC OPERATION AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 853.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 57057-8855400351 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
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8855400351-7
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011617525
NSN
5962-01-161-7525
MFG
NAVCOM DEFENSE ELECTRONICS INC.
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.115 INCHES NOMINAL
BODY LENGTH: 1.180 INCHES MINIMUM AND 1.220 INCHES MAXIMUM
BODY WIDTH: 0.495 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND PROGRAMMABLE AND STATIC OPERATION AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 853.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 57057-8855400351 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
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8866300002-7
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011617525
NSN
5962-01-161-7525
MFG
NAVCOM DEFENSE ELECTRONICS INC.
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.115 INCHES NOMINAL
BODY LENGTH: 1.180 INCHES MINIMUM AND 1.220 INCHES MAXIMUM
BODY WIDTH: 0.495 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND PROGRAMMABLE AND STATIC OPERATION AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 853.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 57057-8855400351 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
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ROM/PROM FAMILY 026
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011617525
NSN
5962-01-161-7525
ROM/PROM FAMILY 026
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011617525
NSN
5962-01-161-7525
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.115 INCHES NOMINAL
BODY LENGTH: 1.180 INCHES MINIMUM AND 1.220 INCHES MAXIMUM
BODY WIDTH: 0.495 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND PROGRAMMABLE AND STATIC OPERATION AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 853.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 57057-8855400351 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
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MM2114N-25
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011617526
NSN
5962-01-161-7526
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.130 INCHES NOMINAL
BODY LENGTH: 0.870 INCHES MAXIMUM
BODY WIDTH: 0.250 INCHES NOMINAL
FEATURES PROVIDED: 3-STATE OUTPUT AND STATIC OPERATION AND HIGH SPEED AND LOW POWER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 16 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SN54LS348J
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011617527
NSN
5962-01-161-7527
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 ENCODER, PRIORITY, EIGHT TO THREE LINE
FEATURES PROVIDED: HERMETICALLY SEALED AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 9 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
