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5961-01-411-0262
20 Products
9141-7513-003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014110262
NSN
5961-01-411-0262
9141-7513-003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014110262
NSN
5961-01-411-0262
MFG
BAE SYSTEMS INTEGRATED DEFENSE SOLUTIONS INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
CS48N4448
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014102910
NSN
5961-01-410-2910
MFG
AMETEK PROGRAMMABLE POWER INC.
Description
CAPACITANCE RATING IN PICOFARADS: 4.0 NOMINAL
FUNCTION FOR WHICH DESIGNED: SWITCHING
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 30003-2037AS755 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 NOMINAL REVERSE VOLTAGE, PEAK
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2052AS128-01
TRANSISTOR
NSN, MFG P/N
5961014102917
NSN
5961-01-410-2917
MFG
NAVAL AIR SYSTEMS COMMAND
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 6.20 AMPERES MAXIMUM DRAIN CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.365 INCHES MAXIMUM
OVERALL LENGTH: 1.563 INCHES NOMINAL
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.312 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
TEST DATA DOCUMENT: 30003-2052AS128 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 900.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 900.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
CS42900-06
TRANSISTOR
NSN, MFG P/N
5961014102917
NSN
5961-01-410-2917
MFG
AMETEK PROGRAMMABLE POWER INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 6.20 AMPERES MAXIMUM DRAIN CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.365 INCHES MAXIMUM
OVERALL LENGTH: 1.563 INCHES NOMINAL
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.312 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
TEST DATA DOCUMENT: 30003-2052AS128 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 900.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 900.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
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IRFAF50
TRANSISTOR
NSN, MFG P/N
5961014102917
NSN
5961-01-410-2917
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 6.20 AMPERES MAXIMUM DRAIN CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.365 INCHES MAXIMUM
OVERALL LENGTH: 1.563 INCHES NOMINAL
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.312 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
TEST DATA DOCUMENT: 30003-2052AS128 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 900.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 900.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
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1569AS2064
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014106732
NSN
5961-01-410-6732
1569AS2064
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014106732
NSN
5961-01-410-6732
MFG
NAVAL AIR SYSTEMS COMMAND
Description
DESIGN CONTROL REFERENCE: 1569AS2064
III END ITEM IDENTIFICATION: AIRCRAFT MODEL EP-3E (PECULIAR)
MANUFACTURERS CODE: 30003
THE MANUFACTURERS DATA:
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A3006699-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014106768
NSN
5961-01-410-6768
A3006699-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014106768
NSN
5961-01-410-6768
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.970 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 80063-A3006699 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -5.0 MAXIMUM BASE TO EMITTER VOLTAGE, DC
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SM636HRR-11588
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014106768
NSN
5961-01-410-6768
SM636HRR-11588
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014106768
NSN
5961-01-410-6768
MFG
MICROSEMI CORP.-INTEGRATED PRODUCTS
Description
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.970 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 80063-A3006699 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -5.0 MAXIMUM BASE TO EMITTER VOLTAGE, DC
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NE73435CX
TRANSISTOR
NSN, MFG P/N
5961014106840
NSN
5961-01-410-6840
MFG
CALIFORNIA EASTERN LABS
Description
FUNCTION FOR WHICH DESIGNED: AMPLIFIER
INCLOSURE MATERIAL: METAL AND CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 2.55 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: HERMETIC MICRO-X
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC
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15132
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014107317
NSN
5961-01-410-7317
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
III END ITEM IDENTIFICATION: SHOP EQUIPMENT, ARTILLERY
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TIC126D
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014107325
NSN
5961-01-410-7325
TIC126D
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014107325
NSN
5961-01-410-7325
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
III END ITEM IDENTIFICATION: SHOP EQUIPMENT, ARTILLERY
Related Searches:
233884-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014107785
NSN
5961-01-410-7785
MFG
CUBIC DEFENSE APPLICATIONS INC.
Description
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 94987
MFR SOURCE CONTROLLING REFERENCE: 233884-1
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 94987-233884 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC
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DKV6533-46
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014107785
NSN
5961-01-410-7785
DKV6533-46
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014107785
NSN
5961-01-410-7785
MFG
SKYWORKS SOLUTIONS INC.
Description
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 94987
MFR SOURCE CONTROLLING REFERENCE: 233884-1
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 94987-233884 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC
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104460
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014107810
NSN
5961-01-410-7810
MFG
MICROWAVE DESIGN & MFG
Description
CAPACITANCE RATING IN PICOFARADS: 10.0 MAXIMUM
FUNCTION FOR WHICH DESIGNED: VOLTAGE VARIABLE CAPACITOR
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.176 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 60994-104460 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
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SQ 1224A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014107810
NSN
5961-01-410-7810
MFG
API ELECTRONICS INC.
Description
CAPACITANCE RATING IN PICOFARADS: 10.0 MAXIMUM
FUNCTION FOR WHICH DESIGNED: VOLTAGE VARIABLE CAPACITOR
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.176 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 60994-104460 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
104474
TRANSISTOR
NSN, MFG P/N
5961014107811
NSN
5961-01-410-7811
MFG
MICROWAVE DESIGN & MFG
Description
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: CASE FINISH GOLD
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.450 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 60994-104474 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM FORWARD VOLTAGE, AVERAGE
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SM571
TRANSISTOR
NSN, MFG P/N
5961014107811
NSN
5961-01-410-7811
MFG
SPECTRUM MICROWAVE INC DIV PHILADELPHIA OPERATIONS
Description
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: CASE FINISH GOLD
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.450 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 60994-104474 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM FORWARD VOLTAGE, AVERAGE
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75036-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014108678
NSN
5961-01-410-8678
75036-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014108678
NSN
5961-01-410-8678
MFG
NARCO SCIENTIFIC INDUSTRIES AVIONICS DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
9102-1252-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014110261
NSN
5961-01-411-0261
9102-1252-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014110261
NSN
5961-01-411-0261
MFG
BAE SYSTEMS INTEGRATED DEFENSE SOLUTIONS INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
CS91-1390-400
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014110261
NSN
5961-01-411-0261
CS91-1390-400
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014110261
NSN
5961-01-411-0261
MFG
BAE SYSTEMS OPERATIONS LTD
Description
SEMICONDUCTOR DEVICE,DIODE
