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5962-01-230-5661
20 Products
HB0550-0-P-000
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012305661
NSN
5962-01-230-5661
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
MICROCIRCUIT,DIGITAL
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OP27AZ
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962012305652
NSN
5962-01-230-5652
MFG
ANALOG DEVICES INC. DIV SANTA CLARA SITE
Description
MICROCIRCUIT,LINEAR
Related Searches:
SG104K12/883B
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962012305654
NSN
5962-01-230-5654
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
MICROCIRCUIT,LINEAR
Related Searches:
SG120K12/833B
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962012305654
NSN
5962-01-230-5654
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
MICROCIRCUIT,LINEAR
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SG140K-12/883B
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962012305654
NSN
5962-01-230-5654
MFG
MICROSEMI CORP.-INTEGRATED PRODUCTS
Description
MICROCIRCUIT,LINEAR
Related Searches:
SG120K-12/883B
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962012305655
NSN
5962-01-230-5655
MFG
MICROSEMI CORP.-INTEGRATED PRODUCTS
Description
MICROCIRCUIT,LINEAR
Related Searches:
7783155-003
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012305656
NSN
5962-01-230-5656
MFG
OGDEN AIR LOGISTICS CENTER
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.210 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND W/ACTIVE PULL-UP AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.4 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTP
Related Searches:
M38510/20904BJB
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012305656
NSN
5962-01-230-5656
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.210 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND W/ACTIVE PULL-UP AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.4 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTP
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ROM/PROM FAMILY 028
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012305656
NSN
5962-01-230-5656
ROM/PROM FAMILY 028
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012305656
NSN
5962-01-230-5656
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.210 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND W/ACTIVE PULL-UP AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.4 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTP
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7783155-001
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012305657
NSN
5962-01-230-5657
MFG
OGDEN AIR LOGISTICS CENTER
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.210 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND W/ACTIVE PULL-UP AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.4 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTP
Related Searches:
M38510/20904BJB
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012305657
NSN
5962-01-230-5657
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.210 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND W/ACTIVE PULL-UP AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.4 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTP
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ROM/PROM FAMILY 028
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012305657
NSN
5962-01-230-5657
ROM/PROM FAMILY 028
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012305657
NSN
5962-01-230-5657
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.210 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND W/ACTIVE PULL-UP AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.4 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTP
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156-1706-00
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012305659
NSN
5962-01-230-5659
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
MICROCIRCUIT,MEMORY
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1818-1784
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012305659
NSN
5962-01-230-5659
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
MICROCIRCUIT,MEMORY
Related Searches:
5706848
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012305659
NSN
5962-01-230-5659
MFG
ROHDE & SCHWARZ GMBH & CO. KG
Description
MICROCIRCUIT,MEMORY
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BC5706848
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012305659
NSN
5962-01-230-5659
MFG
ROHDE & SCHWARZ GMBH & CO. KG
Description
MICROCIRCUIT,MEMORY
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012305659
NSN
5962-01-230-5659
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TOSHIBA INTERNATIONAL CORPORATION DBA TOSHIBA INTERNATIONAL
Description
MICROCIRCUIT,MEMORY
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012305659
NSN
5962-01-230-5659
MFG
TOSHIBA INTERNATIONAL CORPORATION DBA TOSHIBA INTERNATIONAL
Description
MICROCIRCUIT,MEMORY
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HC0551-0-P-000
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012305660
NSN
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MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
MICROCIRCUIT,DIGITAL
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012305660
NSN
5962-01-230-5660
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
MICROCIRCUIT,DIGITAL
