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5961-01-132-7791
20 Products
353-9016-740
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011327791
NSN
5961-01-132-7791
353-9016-740
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011327791
NSN
5961-01-132-7791
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 6.360 AMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N3306B
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
III END ITEM IDENTIFICATION: MULTI HULL 03950
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/358
OVERALL LENGTH: 0.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTR
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111-10251
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011324536
NSN
5961-01-132-4536
MFG
POWER-ONE DC POWER SUPPLIES
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1N4003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011324536
NSN
5961-01-132-4536
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
948625-6660
TRANSISTOR
NSN, MFG P/N
5961011325672
NSN
5961-01-132-5672
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 1.00 AMPERES MAXIMUM BASE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV2N5666
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TXV
III END ITEM IDENTIFICATION: FLIGHT SET 76301
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/455
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 15.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/455 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER
Related Searches:
JANTXV2N5666
TRANSISTOR
NSN, MFG P/N
5961011325672
NSN
5961-01-132-5672
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 1.00 AMPERES MAXIMUM BASE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV2N5666
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TXV
III END ITEM IDENTIFICATION: FLIGHT SET 76301
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/455
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 15.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/455 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER
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14260200-02
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011325711
NSN
5961-01-132-5711
14260200-02
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011325711
NSN
5961-01-132-5711
MFG
GENERAL DYNAMICS INFORMATION SYSTEMS INC. DBA GENERAL DYNAMICS ADVANCED INFORMATION SYSTEMS
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.080 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES NOMINAL
OVERALL WIDTH: 0.150 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 2.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.150 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -40.0 MAXIMUM FORWARD VOLTAGE, DC ALL TRANSISTOR
Related Searches:
SA2555
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011325711
NSN
5961-01-132-5711
SA2555
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011325711
NSN
5961-01-132-5711
MFG
FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV HQ
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.080 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES NOMINAL
OVERALL WIDTH: 0.150 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 2.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.150 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -40.0 MAXIMUM FORWARD VOLTAGE, DC ALL TRANSISTOR
Related Searches:
JANTX1N4572
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011326109
NSN
5961-01-132-6109
JANTX1N4572
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011326109
NSN
5961-01-132-6109
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4572
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/452
OVERALL DIAMETER: 0.078 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.195 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500/452 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
JANTX1N6151
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011326110
NSN
5961-01-132-6110
JANTX1N6151
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011326110
NSN
5961-01-132-6110
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6151
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/516
OVERALL DIAMETER: 0.135 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM FORWARD POWER DISSIPATION, AVERAGE
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.090 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500/516 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 26.4 MAXIMUM BREAKDOWN VOLTAGE, DC
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151-0225-00
TRANSISTOR
NSN, MFG P/N
5961011326419
NSN
5961-01-132-6419
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
INCLOSURE MATERIAL: PLASTIC OR CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 625.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 12.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 2.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
S042810
TRANSISTOR
NSN, MFG P/N
5961011326419
NSN
5961-01-132-6419
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
INCLOSURE MATERIAL: PLASTIC OR CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 625.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 12.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 2.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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ST43121
TRANSISTOR
NSN, MFG P/N
5961011326419
NSN
5961-01-132-6419
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
INCLOSURE MATERIAL: PLASTIC OR CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 625.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 12.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 2.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
723089-40
TRANSISTOR
NSN, MFG P/N
5961011326420
NSN
5961-01-132-6420
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
TRANSISTOR
Related Searches:
ST921
TRANSISTOR
NSN, MFG P/N
5961011326420
NSN
5961-01-132-6420
MFG
FREESCALE SEMICONDUCTOR INC.
Description
TRANSISTOR
Related Searches:
141-127-0001
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011327497
NSN
5961-01-132-7497
141-127-0001
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011327497
NSN
5961-01-132-7497
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA NORTHROP GRUMMAN SYSTEMS
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MANUFACTURERS CODE: 95542
MATERIAL: SILICON
MFR SOURCE CONTROLLING REFERENCE: 141-127-0001
SPEC/STD CONTROLLING DATA:
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J300
TRANSISTOR
NSN, MFG P/N
5961011327690
NSN
5961-01-132-7690
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 135.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -25.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
22-6110
TRANSISTOR
NSN, MFG P/N
5961011327691
NSN
5961-01-132-7691
MFG
EADS NORTH AMERICA INC. DBA EADS NORTH AMERICA TEST AND SERVICES DIV EADS NORTH AMERICA TEST AND SERVICES
Description
TRANSISTOR
Related Searches:
KS19883L5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011327692
NSN
5961-01-132-7692
MFG
LUCENT TECHNOLOGIES INC DBA FEDERAL MARKETING GROUP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
10179932-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011327789
NSN
5961-01-132-7789
10179932-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011327789
NSN
5961-01-132-7789
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.427 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
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1N1616R
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011327789
NSN
5961-01-132-7789
MFG
SEMITRONICS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.427 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
