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5962-01-234-2320

20 Products

158300-0001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012342320

NSN

5962-01-234-2320

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158300-0001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012342320

NSN

5962-01-234-2320

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

DM74S288J/883B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012342131

NSN

5962-01-234-2131

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DM74S288J/883B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012342131

NSN

5962-01-234-2131

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.160 INCHES NOMINAL
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
FEATURES PROVIDED: 3-STATE OUTPUT AND PROGRAMMABLE AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 5 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM FAMILY 013

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012342131

NSN

5962-01-234-2131

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ROM/PROM FAMILY 013

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012342131

NSN

5962-01-234-2131

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.160 INCHES NOMINAL
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
FEATURES PROVIDED: 3-STATE OUTPUT AND PROGRAMMABLE AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 5 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

TBP18S030J

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012342131

NSN

5962-01-234-2131

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TBP18S030J

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012342131

NSN

5962-01-234-2131

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.160 INCHES NOMINAL
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
FEATURES PROVIDED: 3-STATE OUTPUT AND PROGRAMMABLE AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 5 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

5882768

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012342133

NSN

5962-01-234-2133

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5882768

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012342133

NSN

5962-01-234-2133

MFG

NAVAL SEA SYSTEMS COMMAND

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.205 INCHES NOMINAL
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: BIPOLAR AND PROGRAMMABLE AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

L537111054

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012342133

NSN

5962-01-234-2133

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L537111054

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012342133

NSN

5962-01-234-2133

MFG

LOCKHEED MARTIN LIBRASCOPE CORP

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.205 INCHES NOMINAL
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: BIPOLAR AND PROGRAMMABLE AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

L537300124

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012342133

NSN

5962-01-234-2133

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L537300124

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012342133

NSN

5962-01-234-2133

MFG

LOCKHEED MARTIN LIBRASCOPE CORP

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.205 INCHES NOMINAL
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: BIPOLAR AND PROGRAMMABLE AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

M38510/20802BJB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012342133

NSN

5962-01-234-2133

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M38510/20802BJB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012342133

NSN

5962-01-234-2133

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.205 INCHES NOMINAL
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: BIPOLAR AND PROGRAMMABLE AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM FAMILY 026

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012342133

NSN

5962-01-234-2133

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ROM/PROM FAMILY 026

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012342133

NSN

5962-01-234-2133

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.205 INCHES NOMINAL
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: BIPOLAR AND PROGRAMMABLE AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

100817-001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012342314

NSN

5962-01-234-2314

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100817-001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012342314

NSN

5962-01-234-2314

MFG

INTEL CORP SALES OFFICE

54-112

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012342314

NSN

5962-01-234-2314

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54-112

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012342314

NSN

5962-01-234-2314

MFG

INTEL CORP SALES OFFICE

ROM/PROM

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012342314

NSN

5962-01-234-2314

View More Info

ROM/PROM

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012342314

NSN

5962-01-234-2314

MFG

DLA LAND AND MARITIME

100663-021

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012342319

NSN

5962-01-234-2319

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100663-021

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012342319

NSN

5962-01-234-2319

MFG

INTEL CORP SALES OFFICE

40-0003-241

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012342319

NSN

5962-01-234-2319

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40-0003-241

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012342319

NSN

5962-01-234-2319

MFG

INTEL CORP SALES OFFICE

54-150

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012342319

NSN

5962-01-234-2319

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54-150

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012342319

NSN

5962-01-234-2319

MFG

INTEL CORP SALES OFFICE

5N74S195J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012342319

NSN

5962-01-234-2319

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5N74S195J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012342319

NSN

5962-01-234-2319

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

DM74S195N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012342319

NSN

5962-01-234-2319

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DM74S195N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012342319

NSN

5962-01-234-2319

MFG

NATIONAL SEMICONDUCTOR CORPORATION

SN74S195N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012342319

NSN

5962-01-234-2319

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SN74S195N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012342319

NSN

5962-01-234-2319

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

67411-0001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012342320

NSN

5962-01-234-2320

View More Info

67411-0001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012342320

NSN

5962-01-234-2320

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

MD2716M/B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012342320

NSN

5962-01-234-2320

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MD2716M/B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012342320

NSN

5962-01-234-2320

MFG

INTEL CORP SALES OFFICE