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5962-01-337-0165
20 Products
72-01595-007
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013370165
NSN
5962-01-337-0165
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 262144
(NON-CORE DATA) WORD QUANTITY: 32768
BODY HEIGHT: 0.165 INCHES MAXIMUM
BODY LENGTH: 1.389 INCHES MINIMUM AND 1.411 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND HIGH SPEED AND MONOLITHIC AND STATIC OPERATION
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013370165
NSN
5962-01-337-0165
MFG
CALWEST FIRE PROTECTION
Description
(NON-CORE DATA) BIT QUANTITY: 262144
(NON-CORE DATA) WORD QUANTITY: 32768
BODY HEIGHT: 0.165 INCHES MAXIMUM
BODY LENGTH: 1.389 INCHES MINIMUM AND 1.411 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND HIGH SPEED AND MONOLITHIC AND STATIC OPERATION
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
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72-01594-007
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013370166
NSN
5962-01-337-0166
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
MICROCIRCUIT,DIGITAL
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95-01472-001
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013370166
NSN
5962-01-337-0166
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
MICROCIRCUIT,DIGITAL
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013370166
NSN
5962-01-337-0166
MFG
DLA LAND AND MARITIME
Description
MICROCIRCUIT,DIGITAL
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013370168
NSN
5962-01-337-0168
MFG
DLA LAND AND MARITIME OPNS SUPPORT GROUP DOCUMENT CONTROL UNIT
Description
MICROCIRCUIT,DIGITAL
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72-01605-207
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013370168
NSN
5962-01-337-0168
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
MICROCIRCUIT,DIGITAL
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013370168
NSN
5962-01-337-0168
MFG
CYPRESS SEMICONDUCTOR CORPORATION
Description
MICROCIRCUIT,DIGITAL
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013370168
NSN
5962-01-337-0168
MFG
INTEGRATED DEVICE TECHNOLOGY INC
Description
MICROCIRCUIT,DIGITAL
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72-01330-007
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013370169
NSN
5962-01-337-0169
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
MICROCIRCUIT,DIGITAL
Related Searches:
Z85C3008CEE
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013370169
NSN
5962-01-337-0169
MFG
ZILOG INC
Description
MICROCIRCUIT,DIGITAL
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72-01602-207
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013370170
NSN
5962-01-337-0170
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
MICROCIRCUIT,MEMORY
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013370170
NSN
5962-01-337-0170
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
MICROCIRCUIT,MEMORY
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013370170
NSN
5962-01-337-0170
MFG
ALTERA CORPORATION
Description
MICROCIRCUIT,MEMORY
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013370170
NSN
5962-01-337-0170
MFG
DLA LAND AND MARITIME
Description
MICROCIRCUIT,MEMORY
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013370171
NSN
5962-01-337-0171
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
95-01476-001
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013370171
NSN
5962-01-337-0171
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013370171
NSN
5962-01-337-0171
MFG
DLA LAND AND MARITIME
Description
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
72-01027-001
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013370172
NSN
5962-01-337-0172
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
MICROCIRCUIT,MEMORY
Related Searches:
95-01458-001
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013370172
NSN
5962-01-337-0172
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
MICROCIRCUIT,MEMORY
