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5962-01-341-3383
20 Products
1826-1665
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962013413383
NSN
5962-01-341-3383
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.400 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 6.80 MILLIAMPERES MAXIMUM COLLECTOR
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: MONOLITHIC AND HIGH SPEED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 MILLIVOLTS MAXIMUM POSITIVE POWER SUPPLY SPAN
Related Searches:
MM28C010-300MP
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013412449
NSN
5962-01-341-2449
MFG
SEEQ TECHNOLOGY INC
Description
(NON-CORE DATA) BIT QUANTITY: 1024000
(NON-CORE DATA) WORD QUANTITY: 128000
BODY HEIGHT: 0.285 INCHES MAXIMUM
BODY LENGTH: 1.560 INCHES MINIMUM AND 1.640 INCHES MAXIMUM
BODY WIDTH: 0.610 INCHES NOMINAL
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM OUTPUT
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND W/ENABLE AND BIDIRECTIONAL
III OVERALL HEIGHT: 0.500 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 28 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: MEMORY MODULE ASSEMBLY
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 32 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 300.00 NANOSECONDS MAXIMUM ACCESS_!
Related Searches:
ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013412449
NSN
5962-01-341-2449
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 1024000
(NON-CORE DATA) WORD QUANTITY: 128000
BODY HEIGHT: 0.285 INCHES MAXIMUM
BODY LENGTH: 1.560 INCHES MINIMUM AND 1.640 INCHES MAXIMUM
BODY WIDTH: 0.610 INCHES NOMINAL
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM OUTPUT
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND W/ENABLE AND BIDIRECTIONAL
III OVERALL HEIGHT: 0.500 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 28 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: MEMORY MODULE ASSEMBLY
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 32 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 300.00 NANOSECONDS MAXIMUM ACCESS_!
Related Searches:
XM28C010M
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013412449
NSN
5962-01-341-2449
MFG
XICOR INC
Description
(NON-CORE DATA) BIT QUANTITY: 1024000
(NON-CORE DATA) WORD QUANTITY: 128000
BODY HEIGHT: 0.285 INCHES MAXIMUM
BODY LENGTH: 1.560 INCHES MINIMUM AND 1.640 INCHES MAXIMUM
BODY WIDTH: 0.610 INCHES NOMINAL
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM OUTPUT
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND W/ENABLE AND BIDIRECTIONAL
III OVERALL HEIGHT: 0.500 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 28 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: MEMORY MODULE ASSEMBLY
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 32 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 300.00 NANOSECONDS MAXIMUM ACCESS_!
Related Searches:
1818-3307
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013412450
NSN
5962-01-341-2450
MFG
HEWLETT PACKARD CO
Description
(NON-CORE DATA) BIT QUANTITY: 262144
(NON-CORE DATA) WORD QUANTITY: 262144
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 90.00 MILLIAMPERES MAXIMUM SUPPLY
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/24603BEA
FEATURES PROVIDED: DYNAMIC AND MONOLITHIC AND W/CLOCK AND W/BUFFERED OUTPUT
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/246
OPERATING TEMP RANGE: -55.0 TO 110.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: DYNAMIC RANDOM ACCESS MEMORY
SPEC/STD C
Related Searches:
5962-3824603BEA
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013412450
NSN
5962-01-341-2450
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) BIT QUANTITY: 262144
(NON-CORE DATA) WORD QUANTITY: 262144
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 90.00 MILLIAMPERES MAXIMUM SUPPLY
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/24603BEA
FEATURES PROVIDED: DYNAMIC AND MONOLITHIC AND W/CLOCK AND W/BUFFERED OUTPUT
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/246
OPERATING TEMP RANGE: -55.0 TO 110.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: DYNAMIC RANDOM ACCESS MEMORY
SPEC/STD C
Related Searches:
5962-3824603BEB
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013412450
NSN
5962-01-341-2450
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) BIT QUANTITY: 262144
(NON-CORE DATA) WORD QUANTITY: 262144
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 90.00 MILLIAMPERES MAXIMUM SUPPLY
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/24603BEA
FEATURES PROVIDED: DYNAMIC AND MONOLITHIC AND W/CLOCK AND W/BUFFERED OUTPUT
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/246
OPERATING TEMP RANGE: -55.0 TO 110.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: DYNAMIC RANDOM ACCESS MEMORY
SPEC/STD C
Related Searches:
5962-3824603BEX
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013412450
NSN
5962-01-341-2450
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) BIT QUANTITY: 262144
(NON-CORE DATA) WORD QUANTITY: 262144
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 90.00 MILLIAMPERES MAXIMUM SUPPLY
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/24603BEA
FEATURES PROVIDED: DYNAMIC AND MONOLITHIC AND W/CLOCK AND W/BUFFERED OUTPUT
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/246
OPERATING TEMP RANGE: -55.0 TO 110.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: DYNAMIC RANDOM ACCESS MEMORY
SPEC/STD C
Related Searches:
8515203EA
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013412450
NSN
5962-01-341-2450
MFG
DLA LAND AND MARITIME OPNS SUPPORT GROUP DOCUMENT CONTROL UNIT
Description
(NON-CORE DATA) BIT QUANTITY: 262144
(NON-CORE DATA) WORD QUANTITY: 262144
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 90.00 MILLIAMPERES MAXIMUM SUPPLY
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/24603BEA
FEATURES PROVIDED: DYNAMIC AND MONOLITHIC AND W/CLOCK AND W/BUFFERED OUTPUT
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/246
OPERATING TEMP RANGE: -55.0 TO 110.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: DYNAMIC RANDOM ACCESS MEMORY
SPEC/STD C
Related Searches:
M38510/24603BEA
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013412450
NSN
5962-01-341-2450
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) BIT QUANTITY: 262144
(NON-CORE DATA) WORD QUANTITY: 262144
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 90.00 MILLIAMPERES MAXIMUM SUPPLY
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/24603BEA
FEATURES PROVIDED: DYNAMIC AND MONOLITHIC AND W/CLOCK AND W/BUFFERED OUTPUT
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/246
OPERATING TEMP RANGE: -55.0 TO 110.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: DYNAMIC RANDOM ACCESS MEMORY
SPEC/STD C
Related Searches:
M38510/24603BEB
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013412450
NSN
5962-01-341-2450
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) BIT QUANTITY: 262144
(NON-CORE DATA) WORD QUANTITY: 262144
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 90.00 MILLIAMPERES MAXIMUM SUPPLY
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/24603BEA
FEATURES PROVIDED: DYNAMIC AND MONOLITHIC AND W/CLOCK AND W/BUFFERED OUTPUT
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/246
OPERATING TEMP RANGE: -55.0 TO 110.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: DYNAMIC RANDOM ACCESS MEMORY
SPEC/STD C
Related Searches:
M38510/24603BEX
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013412450
NSN
5962-01-341-2450
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) BIT QUANTITY: 262144
(NON-CORE DATA) WORD QUANTITY: 262144
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 90.00 MILLIAMPERES MAXIMUM SUPPLY
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/24603BEA
FEATURES PROVIDED: DYNAMIC AND MONOLITHIC AND W/CLOCK AND W/BUFFERED OUTPUT
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/246
OPERATING TEMP RANGE: -55.0 TO 110.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: DYNAMIC RANDOM ACCESS MEMORY
SPEC/STD C
Related Searches:
MT1259-12
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013412450
NSN
5962-01-341-2450
MFG
MICRON TECHNOLOGY INC.
Description
(NON-CORE DATA) BIT QUANTITY: 262144
(NON-CORE DATA) WORD QUANTITY: 262144
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 90.00 MILLIAMPERES MAXIMUM SUPPLY
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/24603BEA
FEATURES PROVIDED: DYNAMIC AND MONOLITHIC AND W/CLOCK AND W/BUFFERED OUTPUT
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/246
OPERATING TEMP RANGE: -55.0 TO 110.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: DYNAMIC RANDOM ACCESS MEMORY
SPEC/STD C
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SMJ4256-12JDS
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013412450
NSN
5962-01-341-2450
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
(NON-CORE DATA) BIT QUANTITY: 262144
(NON-CORE DATA) WORD QUANTITY: 262144
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 90.00 MILLIAMPERES MAXIMUM SUPPLY
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/24603BEA
FEATURES PROVIDED: DYNAMIC AND MONOLITHIC AND W/CLOCK AND W/BUFFERED OUTPUT
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/246
OPERATING TEMP RANGE: -55.0 TO 110.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: DYNAMIC RANDOM ACCESS MEMORY
SPEC/STD C
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013412450
NSN
5962-01-341-2450
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
(NON-CORE DATA) BIT QUANTITY: 262144
(NON-CORE DATA) WORD QUANTITY: 262144
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 90.00 MILLIAMPERES MAXIMUM SUPPLY
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/24603BEA
FEATURES PROVIDED: DYNAMIC AND MONOLITHIC AND W/CLOCK AND W/BUFFERED OUTPUT
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/246
OPERATING TEMP RANGE: -55.0 TO 110.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: DYNAMIC RANDOM ACCESS MEMORY
SPEC/STD C
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MICROCIRCUIT
NSN, MFG P/N
5962013412666
NSN
5962-01-341-2666
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
MICROCIRCUIT
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656-0926-003
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013413045
NSN
5962-01-341-3045
MFG
ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS
Description
MICROCIRCUIT,MEMORY
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962013413383
NSN
5962-01-341-3383
MFG
NAVAL AIR SYSTEMS COMMAND
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.400 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 6.80 MILLIAMPERES MAXIMUM COLLECTOR
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: MONOLITHIC AND HIGH SPEED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 MILLIVOLTS MAXIMUM POSITIVE POWER SUPPLY SPAN
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LM6161J
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962013413383
NSN
5962-01-341-3383
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.400 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 6.80 MILLIAMPERES MAXIMUM COLLECTOR
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: MONOLITHIC AND HIGH SPEED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 MILLIVOLTS MAXIMUM POSITIVE POWER SUPPLY SPAN
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962013413383
NSN
5962-01-341-3383
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.400 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 6.80 MILLIAMPERES MAXIMUM COLLECTOR
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: MONOLITHIC AND HIGH SPEED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 MILLIVOLTS MAXIMUM POSITIVE POWER SUPPLY SPAN
