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5961-00-503-9964
20 Products
13220E3539
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005039964
NSN
5961-00-503-9964
13220E3539
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005039964
NSN
5961-00-503-9964
MFG
CECOM LR CENTER
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.8 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
T1D149N
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961005039933
NSN
5961-00-503-9933
T1D149N
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961005039933
NSN
5961-00-503-9933
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
DESIGN CONTROL REFERENCE: 480342-0000
MANUFACTURERS CODE: 14028
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.780 INCHES MAXIMUM
OVERALL WIDTH: 0.280 INCHES MAXIMUM
THE MANUFACTURERS DATA:
Related Searches:
351-1020-012
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961005039961
NSN
5961-00-503-9961
351-1020-012
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961005039961
NSN
5961-00-503-9961
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
COMPONENT NAME AND QUANTITY: 16 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.035 INCHES MINIMUM AND 0.050 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
OVERALL WIDTH: 0.140 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 0.165 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 10 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM REVERSE
Related Searches:
BC1078
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961005039961
NSN
5961-00-503-9961
BC1078
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961005039961
NSN
5961-00-503-9961
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
COMPONENT NAME AND QUANTITY: 16 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.035 INCHES MINIMUM AND 0.050 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
OVERALL WIDTH: 0.140 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 0.165 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 10 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM REVERSE
Related Searches:
FSA2579M
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961005039961
NSN
5961-00-503-9961
FSA2579M
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961005039961
NSN
5961-00-503-9961
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
COMPONENT NAME AND QUANTITY: 16 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.035 INCHES MINIMUM AND 0.050 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
OVERALL WIDTH: 0.140 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 0.165 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 10 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM REVERSE
Related Searches:
922-6117-012
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005039963
NSN
5961-00-503-9963
922-6117-012
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005039963
NSN
5961-00-503-9963
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 28.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
BA141-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005039963
NSN
5961-00-503-9963
MFG
ITT SEMICONDUCTORS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 28.0 MAXIMUM REVERSE VOLTAGE, PEAK
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353-6532-062
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005039964
NSN
5961-00-503-9964
353-6532-062
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005039964
NSN
5961-00-503-9964
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.8 MAXIMUM NOMINAL REGULATOR VOLTAGE
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4-25259P
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005039964
NSN
5961-00-503-9964
MFG
BASTOGI SISTEMI SPA
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.8 MAXIMUM NOMINAL REGULATOR VOLTAGE
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6350-00-228-2661
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005039964
NSN
5961-00-503-9964
6350-00-228-2661
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005039964
NSN
5961-00-503-9964
MFG
SYSTEMS AND ELECTRONICS INC
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.8 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
LVA68A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005039964
NSN
5961-00-503-9964
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.8 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
351-1020-010
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961005039965
NSN
5961-00-503-9965
351-1020-010
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961005039965
NSN
5961-00-503-9965
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
COMPONENT NAME AND QUANTITY: 16 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 330.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.070 INCHES MAXIMUM
OVERALL LENGTH: 0.290 INCHES MAXIMUM
OVERALL WIDTH: 0.150 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 0.070 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 10 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
FSA1549M
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961005039965
NSN
5961-00-503-9965
FSA1549M
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961005039965
NSN
5961-00-503-9965
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
COMPONENT NAME AND QUANTITY: 16 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 330.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.070 INCHES MAXIMUM
OVERALL LENGTH: 0.290 INCHES MAXIMUM
OVERALL WIDTH: 0.150 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 0.070 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 10 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
TID25A
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961005039965
NSN
5961-00-503-9965
TID25A
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961005039965
NSN
5961-00-503-9965
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
COMPONENT NAME AND QUANTITY: 16 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 330.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.070 INCHES MAXIMUM
OVERALL LENGTH: 0.290 INCHES MAXIMUM
OVERALL WIDTH: 0.150 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 0.070 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 10 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
1906-0024
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961005040210
NSN
5961-00-504-0210
1906-0024
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961005040210
NSN
5961-00-504-0210
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM REPETITIVE PEAK FORWARD CURRENT AND 500.00 MILLIAMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 135.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL LENGTH: 0.213 INCHES NOMINAL
OVERALL WIDTH: 0.320 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 225.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: COMMON ANODE; ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 3 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
DMS 87023B
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961005040210
NSN
5961-00-504-0210
DMS 87023B
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961005040210
NSN
5961-00-504-0210
MFG
DLA LAND AND MARITIME
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM REPETITIVE PEAK FORWARD CURRENT AND 500.00 MILLIAMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 135.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL LENGTH: 0.213 INCHES NOMINAL
OVERALL WIDTH: 0.320 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 225.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: COMMON ANODE; ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 3 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
MMD6150
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961005040210
NSN
5961-00-504-0210
MMD6150
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961005040210
NSN
5961-00-504-0210
MFG
FREESCALE SEMICONDUCTOR INC.
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM REPETITIVE PEAK FORWARD CURRENT AND 500.00 MILLIAMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 135.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL LENGTH: 0.213 INCHES NOMINAL
OVERALL WIDTH: 0.320 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 225.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: COMMON ANODE; ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 3 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
1906-0025
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961005040211
NSN
5961-00-504-0211
1906-0025
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961005040211
NSN
5961-00-504-0211
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM REPETITIVE PEAK FORWARD CURRENT AND 500.00 MILLIAMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
DESIGN CONTROL REFERENCE: 1906-0025
MANUFACTURERS CODE: 50434
OVERALL DIAMETER: 0.092 INCHES MAXIMUM
OVERALL HEIGHT: 0.058 INCHES MAXIMUM
SPECIAL FEATURES: COMMON CATHODE
TERMINAL TYPE AND QUANTITY: 3 RIBBON
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
SMD121
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961005040211
NSN
5961-00-504-0211
SMD121
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961005040211
NSN
5961-00-504-0211
MFG
FREESCALE SEMICONDUCTOR INC.
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM REPETITIVE PEAK FORWARD CURRENT AND 500.00 MILLIAMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
DESIGN CONTROL REFERENCE: 1906-0025
MANUFACTURERS CODE: 50434
OVERALL DIAMETER: 0.092 INCHES MAXIMUM
OVERALL HEIGHT: 0.058 INCHES MAXIMUM
SPECIAL FEATURES: COMMON CATHODE
TERMINAL TYPE AND QUANTITY: 3 RIBBON
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
1901-0781
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005040409
NSN
5961-00-504-0409
MFG
HEWLETT PACKARD CO
Description
CURRENT RATING PER CHARACTERISTIC: 22.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.405 INCHES MAXIMUM
OVERALL LENGTH: 0.246 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.010 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
