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5961-00-089-0595

20 Products

6740-3

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961000890595

NSN

5961-00-089-0595

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6740-3

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961000890595

NSN

5961-00-089-0595

MFG

ROCKWELL COLLINS AEROSPACE & ELECTRONICS INC. DBA RC DISPLAYS SYSTEMS

Description

COMPONENT NAME AND QUANTITY: 3 SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: W/HEAT SINK
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.725 INCHES NOMINAL
OVERALL LENGTH: 0.937 INCHES NOMINAL
OVERALL WIDTH: 0.315 INCHES NOMINAL
TERMINAL LENGTH: 0.300 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 PIN

1N1611A

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961000889785

NSN

5961-00-088-9785

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1N1611A

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961000889785

NSN

5961-00-088-9785

MFG

SKYWORKS SOLUTIONS INC.

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 4 SEMICONDUCTOR DEVICE DIODE
FUNCTION FOR WHICH DESIGNED: MICROWAVE
III END ITEM IDENTIFICATION: P-3 ORION AIRCRAFT.
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-22 ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: PRESS FIT ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.294 INCHES NOMINAL ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.800 INCHES MINIMUM AND 0.840 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE

261C307

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961000889785

NSN

5961-00-088-9785

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261C307

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961000889785

NSN

5961-00-088-9785

MFG

EDO CORP DIV EDO CORPORATION ANTENNA PRODUCTS & TECHNOLOGIES

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 4 SEMICONDUCTOR DEVICE DIODE
FUNCTION FOR WHICH DESIGNED: MICROWAVE
III END ITEM IDENTIFICATION: P-3 ORION AIRCRAFT.
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-22 ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: PRESS FIT ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.294 INCHES NOMINAL ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.800 INCHES MINIMUM AND 0.840 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE

2W1691

TRANSISTOR

NSN, MFG P/N

5961000889898

NSN

5961-00-088-9898

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2W1691

TRANSISTOR

NSN, MFG P/N

5961000889898

NSN

5961-00-088-9898

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

DESIGN CONTROL REFERENCE: 2W1691
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 01295
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

576R131H05

TRANSISTOR

NSN, MFG P/N

5961000889898

NSN

5961-00-088-9898

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576R131H05

TRANSISTOR

NSN, MFG P/N

5961000889898

NSN

5961-00-088-9898

MFG

WESTINGHOUSE ELECTRIC CORP

Description

DESIGN CONTROL REFERENCE: 2W1691
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 01295
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

014-210

TRANSISTOR

NSN, MFG P/N

5961000890499

NSN

5961-00-089-0499

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014-210

TRANSISTOR

NSN, MFG P/N

5961000890499

NSN

5961-00-089-0499

MFG

AMPEX SYSTEMS CORP

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-2N2218 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

2L5512-230-007425

TRANSISTOR

NSN, MFG P/N

5961000890499

NSN

5961-00-089-0499

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2L5512-230-007425

TRANSISTOR

NSN, MFG P/N

5961000890499

NSN

5961-00-089-0499

MFG

EADS DEUTSCHLAND GMBH -VERTEIDIGUNG UND ZIVILE SYSTEME-

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-2N2218 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

2N1387

TRANSISTOR

NSN, MFG P/N

5961000890499

NSN

5961-00-089-0499

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2N1387

TRANSISTOR

NSN, MFG P/N

5961000890499

NSN

5961-00-089-0499

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-2N2218 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

2N2218

TRANSISTOR

NSN, MFG P/N

5961000890499

NSN

5961-00-089-0499

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2N2218

TRANSISTOR

NSN, MFG P/N

5961000890499

NSN

5961-00-089-0499

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-2N2218 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

80500023

TRANSISTOR

NSN, MFG P/N

5961000890499

NSN

5961-00-089-0499

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80500023

TRANSISTOR

NSN, MFG P/N

5961000890499

NSN

5961-00-089-0499

MFG

ERICSSON INFORMATION SYSTEM A/S

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-2N2218 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

854-0053

TRANSISTOR

NSN, MFG P/N

5961000890499

NSN

5961-00-089-0499

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854-0053

TRANSISTOR

NSN, MFG P/N

5961000890499

NSN

5961-00-089-0499

MFG

R DOWN MFG INC

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-2N2218 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

2578856-2

TRANSISTOR

NSN, MFG P/N

5961000890500

NSN

5961-00-089-0500

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2578856-2

TRANSISTOR

NSN, MFG P/N

5961000890500

NSN

5961-00-089-0500

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN MS2

Description

DESIGN CONTROL REFERENCE: ZA1264
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 12969
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

3A1122

TRANSISTOR

NSN, MFG P/N

5961000890500

NSN

5961-00-089-0500

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3A1122

TRANSISTOR

NSN, MFG P/N

5961000890500

NSN

5961-00-089-0500

MFG

MICRO USPD INC

Description

DESIGN CONTROL REFERENCE: ZA1264
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 12969
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

SW1064

TRANSISTOR

NSN, MFG P/N

5961000890500

NSN

5961-00-089-0500

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SW1064

TRANSISTOR

NSN, MFG P/N

5961000890500

NSN

5961-00-089-0500

MFG

GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP

Description

DESIGN CONTROL REFERENCE: ZA1264
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 12969
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

2W1724

TRANSISTOR

NSN, MFG P/N

5961000890501

NSN

5961-00-089-0501

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2W1724

TRANSISTOR

NSN, MFG P/N

5961000890501

NSN

5961-00-089-0501

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG

576R880H01

TRANSISTOR

NSN, MFG P/N

5961000890501

NSN

5961-00-089-0501

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576R880H01

TRANSISTOR

NSN, MFG P/N

5961000890501

NSN

5961-00-089-0501

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

Description

ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG

6740-1

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961000890594

NSN

5961-00-089-0594

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6740-1

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961000890594

NSN

5961-00-089-0594

MFG

ROCKWELL COLLINS AEROSPACE & ELECTRONICS INC. DBA RC DISPLAYS SYSTEMS

Description

COMPONENT NAME AND QUANTITY: 3 SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.650 INCHES NOMINAL
OVERALL LENGTH: 0.937 INCHES NOMINAL
OVERALL WIDTH: 0.315 INCHES NOMINAL
TERMINAL LENGTH: 0.300 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 PIN

1850-0422

TRANSISTOR

NSN, MFG P/N

5961000890597

NSN

5961-00-089-0597

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1850-0422

TRANSISTOR

NSN, MFG P/N

5961000890597

NSN

5961-00-089-0597

MFG

AGILENT TECHNOLOGIES INC. DIV AGILENT TECHNOLOGIES HEADQUARTERS

Description

CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 90.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: VOLTAGE MINIMUM; JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN

5080-0450

TRANSISTOR

NSN, MFG P/N

5961000890597

NSN

5961-00-089-0597

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5080-0450

TRANSISTOR

NSN, MFG P/N

5961000890597

NSN

5961-00-089-0597

MFG

HEWLETT PACKARD CO

Description

CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 90.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: VOLTAGE MINIMUM; JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN

SP2252

TRANSISTOR

NSN, MFG P/N

5961000890597

NSN

5961-00-089-0597

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SP2252

TRANSISTOR

NSN, MFG P/N

5961000890597

NSN

5961-00-089-0597

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 90.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: VOLTAGE MINIMUM; JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN