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5961-00-021-3223

20 Products

762-5305-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000213223

NSN

5961-00-021-3223

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762-5305-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000213223

NSN

5961-00-021-3223

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

MOUNTING METHOD: TERMINAL
TERMINAL LENGTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD W/TERMINAL LUG

1902-0075

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000208333

NSN

5961-00-020-8333

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1902-0075

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000208333

NSN

5961-00-020-8333

MFG

HEWLETT PACKARD CO

Description

CURRENT RATING PER CHARACTERISTIC: 13.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.438 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 28.7 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

1902-0229

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000208333

NSN

5961-00-020-8333

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1902-0229

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000208333

NSN

5961-00-020-8333

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

CURRENT RATING PER CHARACTERISTIC: 13.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.438 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 28.7 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

SZ1521-188

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000208333

NSN

5961-00-020-8333

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SZ1521-188

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000208333

NSN

5961-00-020-8333

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 13.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.438 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 28.7 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

617921-4

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961000209017

NSN

5961-00-020-9017

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617921-4

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961000209017

NSN

5961-00-020-9017

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE

354-0234-00

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961000209131

NSN

5961-00-020-9131

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354-0234-00

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961000209131

NSN

5961-00-020-9131

MFG

TEKTRONIX INC. DBA TEKTRONIX

Description

MATERIAL: PLASTIC ACETAL
MOUNTING FACILITY TYPE AND QUANTITY: 1 FRICTION SINGLE MOUNTING FACILITY
OVERALL DIAMETER: 0.436 INCHES NOMINAL
OVERALL LENGTH: 0.220 INCHES NOMINAL
STYLE DESIGNATOR: 3C CYLINDRICAL

353-3594-000

SEMICONDUCTOR DEVIC

NSN, MFG P/N

5961000209541

NSN

5961-00-020-9541

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353-3594-000

SEMICONDUCTOR DEVIC

NSN, MFG P/N

5961000209541

NSN

5961-00-020-9541

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

762-9881-001

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961000213222

NSN

5961-00-021-3222

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762-9881-001

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961000213222

NSN

5961-00-021-3222

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

0122-0008

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000213358

NSN

5961-00-021-3358

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0122-0008

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000213358

NSN

5961-00-021-3358

MFG

HEWLETT PACKARD CO

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM REVERSE VOLTAGE, PEAK

10128362

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000213358

NSN

5961-00-021-3358

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10128362

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000213358

NSN

5961-00-021-3358

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM REVERSE VOLTAGE, PEAK

PC114

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000213358

NSN

5961-00-021-3358

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PC114

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000213358

NSN

5961-00-021-3358

MFG

TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM REVERSE VOLTAGE, PEAK

VA114

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000213358

NSN

5961-00-021-3358

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VA114

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000213358

NSN

5961-00-021-3358

MFG

CRYSTALONICS INC.

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM REVERSE VOLTAGE, PEAK

420521-01

TRANSISTOR

NSN, MFG P/N

5961000214008

NSN

5961-00-021-4008

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420521-01

TRANSISTOR

NSN, MFG P/N

5961000214008

NSN

5961-00-021-4008

MFG

BAE SYSTEMS CONTROLS INC

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: SILICON

MC1162-12KV

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000214010

NSN

5961-00-021-4010

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MC1162-12KV

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000214010

NSN

5961-00-021-4010

MFG

MICROSEMI CORPORATION

Description

INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON

A25A509-016-101

TRANSISTOR

NSN, MFG P/N

5961000215564

NSN

5961-00-021-5564

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A25A509-016-101

TRANSISTOR

NSN, MFG P/N

5961000215564

NSN

5961-00-021-5564

MFG

LOCKHEED MARTIN CORPORATION DIV LOCKHEED MARTIN INFORMATION SYSTEMS & GLOBAL SOLUTIONS

Description

INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

S24249

TRANSISTOR

NSN, MFG P/N

5961000215564

NSN

5961-00-021-5564

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S24249

TRANSISTOR

NSN, MFG P/N

5961000215564

NSN

5961-00-021-5564

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

1N755A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000215566

NSN

5961-00-021-5566

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1N755A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000215566

NSN

5961-00-021-5566

MFG

FREESCALE SEMICONDUCTOR INC.

Description

DESIGN CONTROL REFERENCE: 507523-10
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 96214
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

507523-10

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000215566

NSN

5961-00-021-5566

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507523-10

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000215566

NSN

5961-00-021-5566

MFG

RAYTHEON COMPANY

Description

DESIGN CONTROL REFERENCE: 507523-10
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 96214
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

2N3403

TRANSISTOR

NSN, MFG P/N

5961000216509

NSN

5961-00-021-6509

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2N3403

TRANSISTOR

NSN, MFG P/N

5961000216509

NSN

5961-00-021-6509

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 165.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.676 INCHES MAXIMUM
OVERALL LENGTH: 0.407 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 560.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE4810 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR

2N3403A

TRANSISTOR

NSN, MFG P/N

5961000216509

NSN

5961-00-021-6509

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2N3403A

TRANSISTOR

NSN, MFG P/N

5961000216509

NSN

5961-00-021-6509

MFG

ADELCO ELEKTRONIK GMBH

Description

CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 165.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.676 INCHES MAXIMUM
OVERALL LENGTH: 0.407 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 560.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE4810 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR