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5961-00-086-8330
20 Products
1N191
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000868330
NSN
5961-00-086-8330
MFG
GENERAL DYNAMICS C4 SYSTEMS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 90.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.095 INCHES MAXIMUM
OVERALL LENGTH: 0.265 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
7792399
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000868329
NSN
5961-00-086-8329
MFG
ARMY UNITED STATES DEPARTMENT OF THE DBA ROCK ISLAND ARSENAL
Description
CURRENT RATING PER CHARACTERISTIC: 40.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.105 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.2 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
7792400
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000868330
NSN
5961-00-086-8330
MFG
ARMY UNITED STATES DEPARTMENT OF THE DBA ROCK ISLAND ARSENAL
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 90.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.095 INCHES MAXIMUM
OVERALL LENGTH: 0.265 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
IN191
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000868330
NSN
5961-00-086-8330
MFG
GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 90.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.095 INCHES MAXIMUM
OVERALL LENGTH: 0.265 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1N21FM
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961000868807
NSN
5961-00-086-8807
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: MICROWAVE
OVERALL DIAMETER: 0.292 INCHES MINIMUM AND 0.296 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.800 INCHES MINIMUM AND 0.840 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
720650-6
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961000868807
NSN
5961-00-086-8807
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: MICROWAVE
OVERALL DIAMETER: 0.292 INCHES MINIMUM AND 0.296 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.800 INCHES MINIMUM AND 0.840 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
40-666-003-16
TRANSISTOR
NSN, MFG P/N
5961000868894
NSN
5961-00-086-8894
MFG
GE AVIATION BISHOPS CLEEVE CHELTENHAM
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
1N1132
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000869016
NSN
5961-00-086-9016
MFG
SKYWORKS SOLUTIONS INC.
Description
DESIGN CONTROL REFERENCE: 2181418-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 55939
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 CONNECTOR, COAXIAL
THE MANUFACTURERS DATA:
Related Searches:
2181418-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000869016
NSN
5961-00-086-9016
MFG
HONEYWELL INTL DBA HONEYWELL DIV BUSINESS AND GENERAL AVIATION
Description
DESIGN CONTROL REFERENCE: 2181418-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 55939
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 CONNECTOR, COAXIAL
THE MANUFACTURERS DATA:
Related Searches:
1N3055
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000869018
NSN
5961-00-086-9018
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 165.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.520 INCHES NOMINAL
OVERALL LENGTH: 5.000 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE4073 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 18000.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
2182007-4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000869018
NSN
5961-00-086-9018
MFG
HONEYWELL INTL DBA HONEYWELL DIV BUSINESS AND GENERAL AVIATION
Description
CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 165.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.520 INCHES NOMINAL
OVERALL LENGTH: 5.000 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE4073 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 18000.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
615011-7
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000869023
NSN
5961-00-086-9023
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 7.90 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.375 INCHES NOMINAL
OVERALL LENGTH: 1.062 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 800.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 37695-615011 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.4 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
D10316A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000869023
NSN
5961-00-086-9023
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CURRENT RATING PER CHARACTERISTIC: 7.90 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.375 INCHES NOMINAL
OVERALL LENGTH: 1.062 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 800.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 37695-615011 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.4 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
2181736-1
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961000869131
NSN
5961-00-086-9131
2181736-1
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961000869131
NSN
5961-00-086-9131
MFG
HONEYWELL INTL DBA HONEYWELL DIV BUSINESS AND GENERAL AVIATION
Description
HOLDER,SEMICONDUCTOR DEVICE
Related Searches:
22246REVA
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961000869131
NSN
5961-00-086-9131
22246REVA
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961000869131
NSN
5961-00-086-9131
MFG
MICROWAVE DEVELOPMENT LABORATORIES INC. DBA MDL
Description
HOLDER,SEMICONDUCTOR DEVICE
Related Searches:
4913335-73
TRANSISTOR
NSN, MFG P/N
5961000869157
NSN
5961-00-086-9157
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
GT1395
TRANSISTOR
NSN, MFG P/N
5961000869157
NSN
5961-00-086-9157
MFG
GENERAL SEMICONDUCTOR INC
Description
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
S59-34
TRANSISTOR
NSN, MFG P/N
5961000869157
NSN
5961-00-086-9157
MFG
PSI-PERIPHERAL SUPPORT
Description
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
124-0029-274
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000869165
NSN
5961-00-086-9165
124-0029-274
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000869165
NSN
5961-00-086-9165
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE AND 30.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, AVERAGE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND MOUNTING HARDWARE
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.375 INCHES
OVERALL LENGTH: 1.999 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.070 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
2051509
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000869165
NSN
5961-00-086-9165
MFG
CHAMPION AEROSPACE LLC
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE AND 30.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, AVERAGE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND MOUNTING HARDWARE
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.375 INCHES
OVERALL LENGTH: 1.999 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.070 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
