My Quote Request
No products added yet
5961-00-093-0838
20 Products
04450002-001
TRANSISTOR
NSN, MFG P/N
5961000930838
NSN
5961-00-093-0838
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE PLYMOUTH
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
576M5
TRANSISTOR
NSN, MFG P/N
5961000920518
NSN
5961-00-092-0518
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: -100.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND -500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.4 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: DESIGN ANALYSIS; JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND -60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-
Related Searches:
DMS 78019B
TRANSISTOR
NSN, MFG P/N
5961000920518
NSN
5961-00-092-0518
MFG
DLA LAND AND MARITIME
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: -100.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND -500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.4 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: DESIGN ANALYSIS; JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND -60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-
Related Searches:
472-0569-010
TRANSISTOR
NSN, MFG P/N
5961000920519
NSN
5961-00-092-0519
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL DIAMETER: 0.710 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: DESIGN ANALYSIS; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
877M6
TRANSISTOR
NSN, MFG P/N
5961000920519
NSN
5961-00-092-0519
MFG
HARRIS CORP SEMICONDUCTOR SECTOR
Description
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL DIAMETER: 0.710 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: DESIGN ANALYSIS; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
05105-8001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961000920524
NSN
5961-00-092-0524
05105-8001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961000920524
NSN
5961-00-092-0524
MFG
HEWLETT PACKARD CO
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-99
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 625.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN ALL TRANSISTOR
Related Searches:
119-0083
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961000920524
NSN
5961-00-092-0524
119-0083
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961000920524
NSN
5961-00-092-0524
MFG
KEPCO INC.
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-99
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 625.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN ALL TRANSISTOR
Related Searches:
MD8001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961000920524
NSN
5961-00-092-0524
MD8001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961000920524
NSN
5961-00-092-0524
MFG
FREESCALE SEMICONDUCTOR INC.
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-99
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 625.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN ALL TRANSISTOR
Related Searches:
1-913004-216
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000920525
NSN
5961-00-092-0525
1-913004-216
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000920525
NSN
5961-00-092-0525
MFG
EATON CORP ELECTRONIC INSTRUMENTATION DIV LOS ANGELES PLANT
Description
CURRENT RATING PER CHARACTERISTIC: 19.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 13.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
1-913020-016
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000920525
NSN
5961-00-092-0525
1-913020-016
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000920525
NSN
5961-00-092-0525
MFG
GARLOCK SEALING TECHNOLOGIES LLC DBA GARLOCK SEALING TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 19.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 13.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
1ZS13
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000920525
NSN
5961-00-092-0525
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 19.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 13.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
JZ13A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000920525
NSN
5961-00-092-0525
MFG
DIODES INC POWER COMPONENTS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 19.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 13.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
MZ1000-16
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000920525
NSN
5961-00-092-0525
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 19.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 13.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
0N014761-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000920732
NSN
5961-00-092-0732
0N014761-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000920732
NSN
5961-00-092-0732
MFG
NATIONAL SECURITY AGENCY
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.128 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.700 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
SS3027
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000920732
NSN
5961-00-092-0732
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.128 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.700 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
2N4976
TRANSISTOR
NSN, MFG P/N
5961000920784
NSN
5961-00-092-0784
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INTERNAL CONFIGURATION: JUNCTION CONTACT
OVERALL DIAMETER: 0.355 INCHES MINIMUM AND 0.375 INCHES MAXIMUM
OVERALL HEIGHT: 0.645 INCHES MINIMUM AND 0.695 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
SS4105H
TRANSISTOR
NSN, MFG P/N
5961000922507
NSN
5961-00-092-2507
MFG
FREESCALE SEMICONDUCTOR INC.
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: EMITTER
INTERNAL CONFIGURATION: JUNCTION CONTACT
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL HEIGHT: 0.190 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
1N3315
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000922536
NSN
5961-00-092-2536
MFG
FREESCALE SEMICONDUCTOR INC.
Description
DESIGN CONTROL REFERENCE: 1N3315
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 04713
OVERALL LENGTH: 0.470 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.567 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THE MANUFACTURERS DATA:
Related Searches:
1N3315A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000922536
NSN
5961-00-092-2536
MFG
ADELCO ELEKTRONIK GMBH
Description
DESIGN CONTROL REFERENCE: 1N3315
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 04713
OVERALL LENGTH: 0.470 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.567 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THE MANUFACTURERS DATA:
Related Searches:
SS1596
TRANSISTOR
NSN, MFG P/N
5961000930838
NSN
5961-00-093-0838
MFG
FREESCALE SEMICONDUCTOR INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
SEMICONDUCTOR MATERIAL: SILICON
