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5961-01-014-8103
20 Products
1821-0006
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010148103
NSN
5961-01-014-8103
1821-0006
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010148103
NSN
5961-01-014-8103
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
DESIGN CONTROL REFERENCE: 1821-0006
MANUFACTURERS CODE: 50434
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
THE MANUFACTURERS DATA:
Related Searches:
MR1265
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010144993
NSN
5961-01-014-4993
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 650.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: BRACKET AND UNTHREADED HOLE
OVERALL HEIGHT: 1.000 INCHES MAXIMUM
OVERALL LENGTH: 3.000 INCHES NOMINAL
OVERALL WIDTH: 3.000 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 FLANGE AND 1 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
5082-3239
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010144994
NSN
5961-01-014-4994
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AIRCRAFT, VIKING S-3B
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS
Related Searches:
82169-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010144994
NSN
5961-01-014-4994
MFG
WHITTAKER CORP WHITTAKER ELECTRONIC SYSTEMS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AIRCRAFT, VIKING S-3B
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS
Related Searches:
232462
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010144998
NSN
5961-01-014-4998
MFG
FLUKE CORPORATION
Description
DESIGN CONTROL REFERENCE: 232462
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MANUFACTURERS CODE: 89536
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
68A8313P002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010145461
NSN
5961-01-014-5461
68A8313P002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010145461
NSN
5961-01-014-5461
MFG
GENERAL ELECTRIC CO OUTDOOR BREAKER BUSINESS SECTION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
233798
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010145835
NSN
5961-01-014-5835
233798
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010145835
NSN
5961-01-014-5835
MFG
MAROTTA CONTROLS INC.
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
RT146
TRANSISTOR
NSN, MFG P/N
5961010145916
NSN
5961-01-014-5916
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
DESIGN CONTROL REFERENCE: RT146
MANUFACTURERS CODE: 03508
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
39393N
TRANSISTOR
NSN, MFG P/N
5961010145917
NSN
5961-01-014-5917
MFG
RCA CORP GOVERNMENT AND COMMERCIAL SYSTEMS COMMERCIAL COMMICATIONS SYSTEMS DIV
Description
DESIGN CONTROL REFERENCE: 39393N
MANUFACTURERS CODE: 49675
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:
Related Searches:
37959-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010145920
NSN
5961-01-014-5920
MFG
SIEMENS WATER TECHNOLOGIES CORP. DBA ELECTRIC CATALYTIC PRODUCTS GROUP DIV ELECTROCATALYTIC PRODUCTS DIV
Description
DESIGN CONTROL REFERENCE: 37959-2
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MANUFACTURERS CODE: 89357
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
NL-C38D
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010145923
NSN
5961-01-014-5923
NL-C38D
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010145923
NSN
5961-01-014-5923
MFG
NATIONAL ELECTRONICS DIV OF RICHARDSON ELECTRONICS LTD
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.521 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.562 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM BREAKOVER VOLTAGE, DC
Related Searches:
JAN1N2810B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010146396
NSN
5961-01-014-6396
JAN1N2810B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010146396
NSN
5961-01-014-6396
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.410 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ITEM MUST COMPLY WITH RQMT OF DESC PRODUCTION STD NO. L01899
TERMINAL LENGTH: 0.320 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
L01899
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010146396
NSN
5961-01-014-6396
MFG
DLA LAND AND MARITIME
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.410 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ITEM MUST COMPLY WITH RQMT OF DESC PRODUCTION STD NO. L01899
TERMINAL LENGTH: 0.320 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
44A255220G01
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010146429
NSN
5961-01-014-6429
44A255220G01
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010146429
NSN
5961-01-014-6429
MFG
BAE SYSTEMS CONTROLS INC.
Description
MAJOR COMPONENTS: DI0DE 4; BOARD 1; BRACKET 1
OVERALL LENGTH: 2.620 INCHES MAXIMUM
OVERALL WIDTH: 2.320 INCHES MAXIMUM
Related Searches:
1-45
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010146430
NSN
5961-01-014-6430
MFG
MOTOROLA INC MOTOROLA AUTOMOTIVE ELECTRONICS
Description
MAJOR COMPONENTS: RING 1; DIODE 3; SCREW 1
Related Searches:
48P233806-21-11
DIODE
NSN, MFG P/N
5961010146570
NSN
5961-01-014-6570
MFG
HERLEY CHICAGO DBA STEWART WARNER ELECTRONICS
Description
DIODE
Related Searches:
48P233845-21-11
TRANSISTOR
NSN, MFG P/N
5961010146629
NSN
5961-01-014-6629
MFG
HERLEY CHICAGO DBA STEWART WARNER ELECTRONICS
Description
TRANSISTOR
Related Searches:
48P233854-21-11
TRANSISTOR
NSN, MFG P/N
5961010146630
NSN
5961-01-014-6630
MFG
HERLEY CHICAGO DBA STEWART WARNER ELECTRONICS
Description
TRANSISTOR
Related Searches:
10669446
TRANSISTOR
NSN, MFG P/N
5961010146927
NSN
5961-01-014-6927
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 MILLIAMPERES MAXIMUM EMITTER CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: UNIJUNCTION
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 18876-10669446 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BASE TO EMITTER VOLTAGE, DC
Related Searches:
2N491A
TRANSISTOR
NSN, MFG P/N
5961010146927
NSN
5961-01-014-6927
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 MILLIAMPERES MAXIMUM EMITTER CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: UNIJUNCTION
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 18876-10669446 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BASE TO EMITTER VOLTAGE, DC
