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5961-00-192-6230
20 Products
06AJ124
TRANSISTOR
NSN, MFG P/N
5961001926230
NSN
5961-00-192-6230
MFG
SOLITRON DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.340 INCHES MAXIMUM
OVERALL LENGTH: 1.252 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 13499-352-0581 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 55.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 15.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 90.
Related Searches:
FBMZ106
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001926107
NSN
5961-00-192-6107
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
CURRENT RATING PER CHARACTERISTIC: 158.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4969
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/356
OVERALL DIAMETER: 0.090 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/356 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 NOMINAL NOMINA
Related Searches:
JAN1N4969
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001926107
NSN
5961-00-192-6107
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 158.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4969
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/356
OVERALL DIAMETER: 0.090 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/356 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 NOMINAL NOMINA
Related Searches:
JAN1N4969A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001926107
NSN
5961-00-192-6107
JAN1N4969A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001926107
NSN
5961-00-192-6107
MFG
ADELCO ELEKTRONIK GMBH
Description
CURRENT RATING PER CHARACTERISTIC: 158.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4969
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/356
OVERALL DIAMETER: 0.090 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/356 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 NOMINAL NOMINA
Related Searches:
352-0581-030
TRANSISTOR
NSN, MFG P/N
5961001926230
NSN
5961-00-192-6230
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.340 INCHES MAXIMUM
OVERALL LENGTH: 1.252 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 13499-352-0581 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 55.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 15.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 90.
Related Searches:
39179
TRANSISTOR
NSN, MFG P/N
5961001926230
NSN
5961-00-192-6230
MFG
INTERSIL CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.340 INCHES MAXIMUM
OVERALL LENGTH: 1.252 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 13499-352-0581 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 55.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 15.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 90.
Related Searches:
50M30Z1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001926248
NSN
5961-00-192-6248
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 420.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: BRACKET AND UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
11-590-990-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001926262
NSN
5961-00-192-6262
11-590-990-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001926262
NSN
5961-00-192-6262
MFG
FACIT AB EACK
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 170.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5729 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.125 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
133-001-51
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001926262
NSN
5961-00-192-6262
133-001-51
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001926262
NSN
5961-00-192-6262
MFG
TRI SOURCE INC
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 170.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5729 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.125 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1901-5401
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001926262
NSN
5961-00-192-6262
MFG
BR COMMUNICATIONS INC
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 170.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5729 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.125 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1N5401
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001926262
NSN
5961-00-192-6262
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 170.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5729 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.125 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1N5401A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001926262
NSN
5961-00-192-6262
MFG
ADELCO ELEKTRONIK GMBH
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 170.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5729 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.125 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
261-299
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001926262
NSN
5961-00-192-6262
MFG
RS COMPONENTS LIMITED
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 170.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5729 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.125 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
398B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001926262
NSN
5961-00-192-6262
MFG
WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 170.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5729 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.125 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
4500050000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001926262
NSN
5961-00-192-6262
4500050000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001926262
NSN
5961-00-192-6262
MFG
AEROFLEX FRANCE
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 170.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5729 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.125 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
522-216-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001926262
NSN
5961-00-192-6262
522-216-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001926262
NSN
5961-00-192-6262
MFG
ELETTRONICA SPA
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 170.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5729 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.125 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
581-023
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001926262
NSN
5961-00-192-6262
MFG
AMPEX SYSTEMS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 170.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5729 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.125 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
70-75-554
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001926262
NSN
5961-00-192-6262
MFG
SUPACAT LTD
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 170.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5729 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.125 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
BSL-IN5401
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001926262
NSN
5961-00-192-6262
BSL-IN5401
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001926262
NSN
5961-00-192-6262
MFG
BSL EXPRESS SERVICE LTD
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 170.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5729 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.125 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
CAT16631
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001926262
NSN
5961-00-192-6262
MFG
NICE CTI SYSTEMS UK LTD
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 170.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5729 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.125 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
