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5961-01-132-9097
20 Products
125557
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011329097
NSN
5961-01-132-9097
MFG
SCHAEFF NAMCO INC
Description
SEMICONDUCTOR DEVICE ASSEMBLY
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UXA2S303
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011328401
NSN
5961-01-132-8401
MFG
SEMI-GENERAL INC .
Description
III END ITEM IDENTIFICATION: AN/TPN-30A JA E/I FSCM 14203
SPECIAL FEATURES: LEADS IAW MIL-STD-750, METHOD 2026
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42740
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011328402
NSN
5961-01-132-8402
MFG
GEMS SENSORS INC
Description
COMPONENT NAME AND QUANTITY: 4 SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: METAL AND CERAMIC
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 2.250 INCHES NOMINAL
OVERALL LENGTH: 3.125 INCHES NOMINAL
OVERALL WIDTH: 2.625 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 6 THREADED STUD
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ECG 304
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961011328411
NSN
5961-01-132-8411
MFG
PHILIPS ECG INC DIV OF NORTH AMERICAN PHILIPS CORP
Description
COMPONENT FUNCTION RELATIONSHIP: UNMATCHED
COMPONENT NAME AND QUANTITY: 24 TRANSISTOR
FEATURES PROVIDED: MOUNTING HARDWARE
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JANTXV2N5660
TRANSISTOR
NSN, MFG P/N
5961011328730
NSN
5961-01-132-8730
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 0.50 AMPERES MAXIMUM BASE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV2N5660
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
III END ITEM IDENTIFICATION: FLIGHT SET 76301
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE OPTION GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/454
OVERALL HEIGHT: 0.340 INCHES MAXIMUM
OVERALL LENGTH: 1.252 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON_
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JANTXV2N5664
TRANSISTOR
NSN, MFG P/N
5961011328731
NSN
5961-01-132-8731
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 1.00 AMPERES MAXIMUM BASE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV2N5664
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
III END ITEM IDENTIFICATION: FLIGHT SET 76301
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/455
OVERALL HEIGHT: 0.340 INCHES MAXIMUM
OVERALL LENGTH: 1.252 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 30.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFI
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JANTXV1N4123
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011328732
NSN
5961-01-132-8732
JANTXV1N4123
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011328732
NSN
5961-01-132-8732
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N4123
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TXV
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
III END ITEM IDENTIFICATION: FLIGHT SET 76301
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/435
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/435 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011328733
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5961-01-132-8733
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011328733
NSN
5961-01-132-8733
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 28.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N4464
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: LGM 81205
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/406
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.125 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/406 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.800 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING I
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011328734
NSN
5961-01-132-8734
JANTXV1N5648A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011328734
NSN
5961-01-132-8734
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N5648A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TXV
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
III END ITEM IDENTIFICATION: LGM 30 11293
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-13
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/500
OVERALL DIAMETER: 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/500 GOVERNMENT SPECIFICATION
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RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011328847
NSN
5961-01-132-8847
KBPC15-02
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011328847
NSN
5961-01-132-8847
MFG
GENERAL INSTRUMENT CORP CORPORATE HEADQUARTERS
Description
III END ITEM IDENTIFICATION: B-52WEAPONSYS 36378
SPECIAL FEATURES: PLASTIC;15 AMPERES;200 VOLTS;M55 DEG C TO P125 DEG C OPERATING TEMP
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NTE5322
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011328847
NSN
5961-01-132-8847
NTE5322
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011328847
NSN
5961-01-132-8847
MFG
NTE ELECTRONICS INC SUB OF SOLID STATE INC
Description
III END ITEM IDENTIFICATION: B-52WEAPONSYS 36378
SPECIAL FEATURES: PLASTIC;15 AMPERES;200 VOLTS;M55 DEG C TO P125 DEG C OPERATING TEMP
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14SE113
TRANSISTOR
NSN, MFG P/N
5961011329091
NSN
5961-01-132-9091
MFG
SOLITRON DEVICES INC.
Description
TRANSISTOR
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A532A059-101
TRANSISTOR
NSN, MFG P/N
5961011329091
NSN
5961-01-132-9091
MFG
KEARFOTT CORPORATION DBA KEARFOTT DIV GUIDANCE AND NAVIGATION DIVISION
Description
TRANSISTOR
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125562
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011329096
NSN
5961-01-132-9096
MFG
SCHAEFF NAMCO INC
Description
SEMICONDUCTOR DEVICE,DIODE
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14-5393-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011329096
NSN
5961-01-132-9096
14-5393-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011329096
NSN
5961-01-132-9096
MFG
FLIGHT SYSTEMS INC
Description
SEMICONDUCTOR DEVICE,DIODE
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194B5393G1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011329096
NSN
5961-01-132-9096
194B5393G1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011329096
NSN
5961-01-132-9096
MFG
GENERAL ELECTRIC CO GE DRIVE SYSTEMS GOVERNMENT BUSINESS OPN
Description
SEMICONDUCTOR DEVICE,DIODE
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259A9208PXCR
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011329097
NSN
5961-01-132-9097
259A9208PXCR
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011329097
NSN
5961-01-132-9097
MFG
GENERAL ELECTRIC CO GE DRIVE SYSTEMS GOVERNMENT BUSINESS OPN
Description
SEMICONDUCTOR DEVICE ASSEMBLY
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271909
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011329097
NSN
5961-01-132-9097
MFG
NACCO MATERIALS HANDLING GROUP INC
Description
SEMICONDUCTOR DEVICE ASSEMBLY
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271912
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011329097
NSN
5961-01-132-9097
MFG
NACCO MATERIALS HANDLING GROUP INC DBA HYSTER
Description
SEMICONDUCTOR DEVICE ASSEMBLY
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5169138-05
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011329097
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5961-01-132-9097
5169138-05
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011329097
NSN
5961-01-132-9097
MFG
NACCO MATERIALS HANDLING GROUP INC DBA YALE MATERIALS HANDLING DIV NACCO MATERIALS HANDLING GROUP INC.
Description
SEMICONDUCTOR DEVICE ASSEMBLY
