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5961-00-167-7609

20 Products

151-0417-00

TRANSISTOR

NSN, MFG P/N

5961001677609

NSN

5961-00-167-7609

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151-0417-00

TRANSISTOR

NSN, MFG P/N

5961001677609

NSN

5961-00-167-7609

MFG

TEKTRONIX INC. DBA TEKTRONIX

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
OVERALL DIAMETER: 0.210 INCHES NOMINAL
OVERALL LENGTH: 0.140 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

SP8314

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961001675824

NSN

5961-00-167-5824

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SP8314

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961001675824

NSN

5961-00-167-5824

MFG

FAIRCHILD SEMICONDUCTOR CORP COMPONENTS GROUP SUB OF SCHLUMBERGER LTD

Description

DESIGN CONTROL REFERENCE: SP8314
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-77
MANUFACTURERS CODE: 13715
SPECIAL FEATURES: SILICON
THE MANUFACTURERS DATA:

ZS176

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001676769

NSN

5961-00-167-6769

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ZS176

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001676769

NSN

5961-00-167-6769

MFG

FERRANTI TECHNOLOGIES LTD

Description

CURRENT RATING PER CHARACTERISTIC: 750.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.100 INCHES NOMINAL
OVERALL LENGTH: 0.200 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, PEAK

S021766

TRANSISTOR

NSN, MFG P/N

5961001677609

NSN

5961-00-167-7609

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S021766

TRANSISTOR

NSN, MFG P/N

5961001677609

NSN

5961-00-167-7609

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
OVERALL DIAMETER: 0.210 INCHES NOMINAL
OVERALL LENGTH: 0.140 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

81B

TUBE REPLACEMENT BA

NSN, MFG P/N

5961001677611

NSN

5961-00-167-7611

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81B

TUBE REPLACEMENT BA

NSN, MFG P/N

5961001677611

NSN

5961-00-167-7611

MFG

MICRO USPD INC

Description

GENERAL CHARACTERISTICS ITEM DESCRIPTION: 2.290 IN. MAX. DIA, 2.780 IN. MAX. LG, FOUR PIN

823GB

TUBE REPLACEMENT BA

NSN, MFG P/N

5961001677612

NSN

5961-00-167-7612

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823GB

TUBE REPLACEMENT BA

NSN, MFG P/N

5961001677612

NSN

5961-00-167-7612

MFG

MICRO USPD INC

B68067

TUBE REPLACEMENT BA

NSN, MFG P/N

5961001677612

NSN

5961-00-167-7612

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B68067

TUBE REPLACEMENT BA

NSN, MFG P/N

5961001677612

NSN

5961-00-167-7612

MFG

DLA LAND AND MARITIME

B68077

CAP,ANNODE

NSN, MFG P/N

5961001677615

NSN

5961-00-167-7615

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B68077

CAP,ANNODE

NSN, MFG P/N

5961001677615

NSN

5961-00-167-7615

MFG

DLA LAND AND MARITIME

Description

GENERAL CHARACTERISTICS ITEM DESCRIPTION: BRASS,QQB639,NICKEL,QQN-290 PLATED,2.250 IN. LG,0.566 IN. DIA

C12

CAP,ANNODE

NSN, MFG P/N

5961001677615

NSN

5961-00-167-7615

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C12

CAP,ANNODE

NSN, MFG P/N

5961001677615

NSN

5961-00-167-7615

MFG

MICRO USPD INC

Description

GENERAL CHARACTERISTICS ITEM DESCRIPTION: BRASS,QQB639,NICKEL,QQN-290 PLATED,2.250 IN. LG,0.566 IN. DIA

68074

COVER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961001677616

NSN

5961-00-167-7616

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68074

COVER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961001677616

NSN

5961-00-167-7616

MFG

DLA LAND AND MARITIME OPNS SUPPORT GROUP STANDARDIZATION UNIT

Description

MATERIAL: BRASS
OVERALL DIAMETER: 0.566 INCHES NOMINAL
OVERALL LENGTH: 0.870 INCHES NOMINAL

C2

COVER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961001677616

NSN

5961-00-167-7616

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C2

COVER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961001677616

NSN

5961-00-167-7616

MFG

MICRO USPD INC

Description

MATERIAL: BRASS
OVERALL DIAMETER: 0.566 INCHES NOMINAL
OVERALL LENGTH: 0.870 INCHES NOMINAL

UDA10

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001677618

NSN

5961-00-167-7618

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UDA10

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001677618

NSN

5961-00-167-7618

MFG

MICRO USPD INC

Description

DESIGN CONTROL REFERENCE: UDA10
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 12969
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

UDB2.5

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961001677619

NSN

5961-00-167-7619

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UDB2.5

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961001677619

NSN

5961-00-167-7619

MFG

PD & E ELECTRONICS LLC

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES FORWARD CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25000.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 1 HALF-WAVE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED STUD
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL DIAMETER: 1.900 INCHES MAXIMUM
OVERALL LENGTH: 0.780 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 THREADED HOLE

1B3142-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001677644

NSN

5961-00-167-7644

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1B3142-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001677644

NSN

5961-00-167-7644

MFG

GE AVIATIONS SYSTEMS LLC DBA GE AVIATION DIV ELECTRICAL POWER-POMPANO

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.3 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

1N746A9

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001677644

NSN

5961-00-167-7644

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1N746A9

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001677644

NSN

5961-00-167-7644

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.3 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

69-6816

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001677644

NSN

5961-00-167-7644

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69-6816

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001677644

NSN

5961-00-167-7644

MFG

INTERNATIONAL RECTIFIER CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.3 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

UDB5

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961001677646

NSN

5961-00-167-7646

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UDB5

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961001677646

NSN

5961-00-167-7646

MFG

MICRO USPD INC

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5000.0 BREAKDOWN VOLTAGE, DC
CIRCUIT CONNECTION STYLE DESIGNATOR: A1 HALF-WAVE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE AND THREADED STUD
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL DIAMETER: 1.850 INCHES MINIMUM AND 1.950 INCHES MAXIMUM
OVERALL LENGTH: 0.730 INCHES MINIMUM AND 0.830 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 1 THREADED HOLE

1N3879

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001677656

NSN

5961-00-167-7656

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1N3879

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001677656

NSN

5961-00-167-7656

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 240.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS

48-84845D11

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001677656

NSN

5961-00-167-7656

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48-84845D11

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001677656

NSN

5961-00-167-7656

MFG

VENTELO

Description

CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 240.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS

158-084-0001

TRANSISTOR

NSN, MFG P/N

5961001677665

NSN

5961-00-167-7665

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158-084-0001

TRANSISTOR

NSN, MFG P/N

5961001677665

NSN

5961-00-167-7665

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DBA NORTHROP GRUMMAN SYSTEMS

Description

ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.375 INCHES MAXIMUM
OVERALL LENGTH: 0.320 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD