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5961-00-012-4988
20 Products
2468804PC1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961000124988
NSN
5961-00-012-4988
2468804PC1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961000124988
NSN
5961-00-012-4988
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES REPETITIVE PEAK FORWARD CURRENT AND 500.00 MILLIAMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
CIRCUIT CONNECTION STYLE DESIGNATOR: 1 HALF-WAVE 1 PHASE
MATERIAL: SILICON
OVERALL HEIGHT: 0.500 INCHES MAXIMUM
OVERALL LENGTH: 10.000 INCHES MAXIMUM
OVERALL WIDTH: 1.560 INCHES MAXIMUM
SPECIAL FEATURES: TERMINAL TYPE-BINDING POST,SPACED 9.500 IN. C TO C;METAL CASE ENCLOSURE;ABSOLUTE MAX VOLTAGE RATINGS:FWD PEAK VOLTAGE 40,000V/VOLTAGE DROP DC 2.0V;MAX RMS INPUT VOLTAGE 28.2 KVOLTS;OPERATING TEMP 0/+65 DEG C
Related Searches:
JAN1N5603
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000118358
NSN
5961-00-011-8358
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5603
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.375 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/404
OVERALL DIAMETER: 3.450 INCHES MINIMUM AND 3.650 INCHES MAXIMUM
OVERALL LENGTH: 1.277 INCHES MINIMUM AND 1.319 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/404 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED HOLE AND 1 THREADED STUD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5000.0 MAXIMUM REVERSE
Related Searches:
JAN1N5603A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000118358
NSN
5961-00-011-8358
JAN1N5603A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000118358
NSN
5961-00-011-8358
MFG
ADELCO ELEKTRONIK GMBH
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5603
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.375 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/404
OVERALL DIAMETER: 3.450 INCHES MINIMUM AND 3.650 INCHES MAXIMUM
OVERALL LENGTH: 1.277 INCHES MINIMUM AND 1.319 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/404 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED HOLE AND 1 THREADED STUD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5000.0 MAXIMUM REVERSE
Related Searches:
10179932-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000118548
NSN
5961-00-011-8548
10179932-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000118548
NSN
5961-00-011-8548
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 18876
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 10179932-1
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.424 INCHES MAXIMUM
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1N1616
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000118548
NSN
5961-00-011-8548
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 18876
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 10179932-1
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.424 INCHES MAXIMUM
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
PS410A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000119188
NSN
5961-00-011-9188
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 0.40 AMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
03021-1N5597TX
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000119482
NSN
5961-00-011-9482
03021-1N5597TX
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000119482
NSN
5961-00-011-9482
MFG
DLA LAND AND MARITIME OPNS SUPPORT GROUP STANDARDIZATION UNIT
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 03021-1N5597TX
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 037Z3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: THREADED STUD AND THREADED HOLE
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL DIAMETER: 1.950 INCHES MAXIMUM
OVERALL LENGTH: 0.347 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 1 THREADED HOLE AND 1 THREADED STUD
TEST DATA DOCUMENT: 037Z3-03021 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10000.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
1N5597
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000119482
NSN
5961-00-011-9482
MFG
UNIVERSAL SEMICONDUCTOR INC. DBA USI ELECTRONICS
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 03021-1N5597TX
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 037Z3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: THREADED STUD AND THREADED HOLE
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL DIAMETER: 1.950 INCHES MAXIMUM
OVERALL LENGTH: 0.347 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 1 THREADED HOLE AND 1 THREADED STUD
TEST DATA DOCUMENT: 037Z3-03021 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10000.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
1N5597-1/4 STUD
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000119482
NSN
5961-00-011-9482
1N5597-1/4 STUD
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000119482
NSN
5961-00-011-9482
MFG
JOINT ELECTRON DEVICE ENGINEERING COUNCIL
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 03021-1N5597TX
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 037Z3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: THREADED STUD AND THREADED HOLE
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL DIAMETER: 1.950 INCHES MAXIMUM
OVERALL LENGTH: 0.347 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 1 THREADED HOLE AND 1 THREADED STUD
TEST DATA DOCUMENT: 037Z3-03021 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10000.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
JAN1N5597
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000119482
NSN
5961-00-011-9482
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 03021-1N5597TX
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 037Z3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: THREADED STUD AND THREADED HOLE
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL DIAMETER: 1.950 INCHES MAXIMUM
OVERALL LENGTH: 0.347 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 1 THREADED HOLE AND 1 THREADED STUD
TEST DATA DOCUMENT: 037Z3-03021 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10000.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
17030
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961000119632
NSN
5961-00-011-9632
MFG
ABRAMS INSTRUMENT CORPORATION
Description
MAJOR COMPONENTS: DIODES 42; BOARD-MATRIX 1
Related Searches:
7207940P001
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961000119717
NSN
5961-00-011-9717
7207940P001
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961000119717
NSN
5961-00-011-9717
MFG
LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS
Description
OVERALL DIAMETER: 0.469 INCHES MINIMUM AND 0.531 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
Related Searches:
2N2197
TRANSISTOR
NSN, MFG P/N
5961000123463
NSN
5961-00-012-3463
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.375 INCHES NOMINAL
OVERALL LENGTH: 0.262 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 133.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.430 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 8.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE
Related Searches:
CV425
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000124207
NSN
5961-00-012-4207
MFG
ROCKY MOUNTAIN MORITA CORP.
Description
DESIGN CONTROL REFERENCE: CV425
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: S0056
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
1903667
TRANSISTOR
NSN, MFG P/N
5961000124215
NSN
5961-00-012-4215
MFG
THALES AVIONICS LTD
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.500 INCHES MAXIMUM
OVERALL LENGTH: 0.340 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 142.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
Related Searches:
2N3054
TRANSISTOR
NSN, MFG P/N
5961000124215
NSN
5961-00-012-4215
MFG
L-3 COMMUNICATIONS CORPORATION DBA COMMUNICATION SYSTEMS - EAST DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.500 INCHES MAXIMUM
OVERALL LENGTH: 0.340 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 142.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
Related Searches:
2N3054A
TRANSISTOR
NSN, MFG P/N
5961000124215
NSN
5961-00-012-4215
MFG
ADELCO ELEKTRONIK GMBH
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.500 INCHES MAXIMUM
OVERALL LENGTH: 0.340 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 142.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
Related Searches:
41670252-001
TRANSISTOR
NSN, MFG P/N
5961000124215
NSN
5961-00-012-4215
MFG
BULL INFORMATION SYSTEMS LIMITED
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.500 INCHES MAXIMUM
OVERALL LENGTH: 0.340 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 142.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
Related Searches:
YB405003-01
TRANSISTOR
NSN, MFG P/N
5961000124215
NSN
5961-00-012-4215
MFG
SELEX COMMUNICATIONS LTD
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.500 INCHES MAXIMUM
OVERALL LENGTH: 0.340 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 142.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
Related Searches:
416
TRANSISTOR
NSN, MFG P/N
5961000124219
NSN
5961-00-012-4219
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 20.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 130.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 120.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
