Featured Products

My Quote Request

No products added yet

5961-00-812-3748

20 Products

1N758

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008123748

NSN

5961-00-812-3748

View More Info

1N758

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008123748

NSN

5961-00-812-3748

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N758 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

013-466

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008120470

NSN

5961-00-812-0470

View More Info

013-466

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008120470

NSN

5961-00-812-0470

MFG

AMPEX SYSTEMS CORP

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N705 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

1N705

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008120470

NSN

5961-00-812-0470

View More Info

1N705

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008120470

NSN

5961-00-812-0470

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N705 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

11065483-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008120471

NSN

5961-00-812-0471

View More Info

11065483-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008120471

NSN

5961-00-812-0471

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N1116 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG

1N1116

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008120471

NSN

5961-00-812-0471

View More Info

1N1116

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008120471

NSN

5961-00-812-0471

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N1116 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG

291651-0021

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008120471

NSN

5961-00-812-0471

View More Info

291651-0021

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008120471

NSN

5961-00-812-0471

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N1116 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG

5L5532-101-57

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008120471

NSN

5961-00-812-0471

View More Info

5L5532-101-57

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008120471

NSN

5961-00-812-0471

MFG

EADS DEUTSCHLAND GMBH -VERTEIDIGUNG UND ZIVILE SYSTEME-

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N1116 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG

2N1174

TRANSISTOR

NSN, MFG P/N

5961008121693

NSN

5961-00-812-1693

View More Info

2N1174

TRANSISTOR

NSN, MFG P/N

5961008121693

NSN

5961-00-812-1693

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: -200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 200.00 MILLIAMPERES MAXIMUM EMITTER CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N1174
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-215
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.360 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/215 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING

1N3494

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008121871

NSN

5961-00-812-1871

View More Info

1N3494

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008121871

NSN

5961-00-812-1871

MFG

FREESCALE SEMICONDUCTOR INC.

Description

DESIGN CONTROL REFERENCE: 1N3494
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 04713
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:

4JA411CB1AD1

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961008122780

NSN

5961-00-812-2780

View More Info

4JA411CB1AD1

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961008122780

NSN

5961-00-812-2780

MFG

GENERAL ELECTRIC CO POWER ELECTRONICS SYSTEMS DEPT

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES FORWARD CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 210.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 1.562 INCHES NOMINAL
OVERALL LENGTH: 2.810 INCHES NOMINAL
OVERALL WIDTH: 1.562 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG

D58801-1-48

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961008122780

NSN

5961-00-812-2780

View More Info

D58801-1-48

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961008122780

NSN

5961-00-812-2780

MFG

HEVI DUTY ELECTRIC SOLA BASIC INDUSTRIES INC DIV A UNIT OF GENERAL SIGNAL CORP

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES FORWARD CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 210.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 1.562 INCHES NOMINAL
OVERALL LENGTH: 2.810 INCHES NOMINAL
OVERALL WIDTH: 1.562 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG

9190661

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961008122832

NSN

5961-00-812-2832

View More Info

9190661

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961008122832

NSN

5961-00-812-2832

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

COMPONENT FUNCTION RELATIONSHIP: UNMATCHED
COMPONENT NAME AND QUANTITY: 6 SEMICONDUCTOR DEVICE DIODE

1N277

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008123574

NSN

5961-00-812-3574

View More Info

1N277

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008123574

NSN

5961-00-812-3574

MFG

GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 80.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 125.0 MAXIMUM REVERSE VOLTAGE, PEAK

1N2167A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008123747

NSN

5961-00-812-3747

View More Info

1N2167A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008123747

NSN

5961-00-812-3747

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.215 INCHES MINIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE 2505 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.125 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.4 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -2.0 TO 2.0

57544-077-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008123747

NSN

5961-00-812-3747

View More Info

57544-077-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008123747

NSN

5961-00-812-3747

MFG

JAEGER ETS

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.215 INCHES MINIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE 2505 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.125 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.4 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -2.0 TO 2.0

720262

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008123747

NSN

5961-00-812-3747

View More Info

720262

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008123747

NSN

5961-00-812-3747

MFG

SYSTRON-DONNER CORP MICROWAVE/INSTRUMENT DIV

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.215 INCHES MINIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE 2505 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.125 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.4 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -2.0 TO 2.0

1N758A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008123748

NSN

5961-00-812-3748

View More Info

1N758A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008123748

NSN

5961-00-812-3748

MFG

ADELCO ELEKTRONIK GMBH

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N758 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

258996

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008123748

NSN

5961-00-812-3748

View More Info

258996

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008123748

NSN

5961-00-812-3748

MFG

RCA CORP DISTRIBUTOR AND SPECIAL PRODUCTS DIV

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N758 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

353-2723-000

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008123748

NSN

5961-00-812-3748

View More Info

353-2723-000

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008123748

NSN

5961-00-812-3748

MFG

ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N758 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

564487-12

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008123748

NSN

5961-00-812-3748

View More Info

564487-12

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008123748

NSN

5961-00-812-3748

MFG

HONEYWELL INTERNATIONAL INC . DBA HONEYWELL DIV AEROSPACE - TEMPE WEST WARNER ROAD

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N758 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD