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5961-00-054-2190

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312C202H02

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961000542190

NSN

5961-00-054-2190

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312C202H02

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961000542190

NSN

5961-00-054-2190

MFG

WESTINGHOUSE ELECTRIC CORP

Description

CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 312C202H02
MANUFACTURERS CODE: 79500
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP MECH; ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS.
THE MANUFACTURERS DATA:

4901-04-0300

TRANSISTOR

NSN, MFG P/N

5961000540265

NSN

5961-00-054-0265

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4901-04-0300

TRANSISTOR

NSN, MFG P/N

5961000540265

NSN

5961-00-054-0265

MFG

WAVETEK RF PRODUCTS INC

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NONDEFINITIVE SPEC/STD DATA: 2N4030 TYPE
OVERALL DIAMETER: 0.359 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 800.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOL

2N1194

TRANSISTOR

NSN, MFG P/N

5961000540372

NSN

5961-00-054-0372

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2N1194

TRANSISTOR

NSN, MFG P/N

5961000540372

NSN

5961-00-054-0372

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 190.0 MAXIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 25.0 MAXIMU

2N1194A

TRANSISTOR

NSN, MFG P/N

5961000540372

NSN

5961-00-054-0372

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2N1194A

TRANSISTOR

NSN, MFG P/N

5961000540372

NSN

5961-00-054-0372

MFG

ADELCO ELEKTRONIK GMBH

Description

CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 190.0 MAXIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 25.0 MAXIMU

77943

TRANSISTOR

NSN, MFG P/N

5961000540372

NSN

5961-00-054-0372

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77943

TRANSISTOR

NSN, MFG P/N

5961000540372

NSN

5961-00-054-0372

MFG

NEWINGTON ELECTRIC CO INC

Description

CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 190.0 MAXIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 25.0 MAXIMU

174-25566-03

TRANSISTOR

NSN, MFG P/N

5961000540569

NSN

5961-00-054-0569

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174-25566-03

TRANSISTOR

NSN, MFG P/N

5961000540569

NSN

5961-00-054-0569

MFG

GTE COMMUNICATION SYSTEMS CORP

Description

CURRENT RATING PER CHARACTERISTIC: -0.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 225.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND -15.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

294-335846-000

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961000540911

NSN

5961-00-054-0911

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294-335846-000

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961000540911

NSN

5961-00-054-0911

MFG

CMC ELECTRONICS INC

294-333019-000

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961000540912

NSN

5961-00-054-0912

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294-333019-000

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961000540912

NSN

5961-00-054-0912

MFG

CMC ELECTRONICS INC

Description

CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: REPEATER SET, RADIO
MATERIAL: SILICON
SPECIAL FEATURES: ENVIRONMENTAL PROTECTION:CORROSION;INCLOSURE FEATURE:HERMETICALLY SEALED; WEAPON SYSTEM ESSENTIAL

ED8032

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961000540912

NSN

5961-00-054-0912

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ED8032

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961000540912

NSN

5961-00-054-0912

MFG

ELECTRONIC DEVICES INC DBA E D I

Description

CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: REPEATER SET, RADIO
MATERIAL: SILICON
SPECIAL FEATURES: ENVIRONMENTAL PROTECTION:CORROSION;INCLOSURE FEATURE:HERMETICALLY SEALED; WEAPON SYSTEM ESSENTIAL

FSPF-15CM

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961000540912

NSN

5961-00-054-0912

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FSPF-15CM

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961000540912

NSN

5961-00-054-0912

MFG

SOLITRON DEVICES INC.

Description

CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: REPEATER SET, RADIO
MATERIAL: SILICON
SPECIAL FEATURES: ENVIRONMENTAL PROTECTION:CORROSION;INCLOSURE FEATURE:HERMETICALLY SEALED; WEAPON SYSTEM ESSENTIAL

SM-A-698360

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961000540912

NSN

5961-00-054-0912

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SM-A-698360

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961000540912

NSN

5961-00-054-0912

MFG

US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR

Description

CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: REPEATER SET, RADIO
MATERIAL: SILICON
SPECIAL FEATURES: ENVIRONMENTAL PROTECTION:CORROSION;INCLOSURE FEATURE:HERMETICALLY SEALED; WEAPON SYSTEM ESSENTIAL

294-333450-000

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961000540913

NSN

5961-00-054-0913

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294-333450-000

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961000540913

NSN

5961-00-054-0913

MFG

CMC ELECTRONICS INC

181-638-0014

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000541379

NSN

5961-00-054-1379

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181-638-0014

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000541379

NSN

5961-00-054-1379

MFG

KEARFOTT CORPORATION DBA KEARFOTT DIV GUIDANCE AND NAVIGATION DIVISION

Description

FUNCTION FOR WHICH DESIGNED: MICROWAVE
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.220 INCHES MAXIMUM
OVERALL LENGTH: 0.750 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON

1N78FMR

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000541379

NSN

5961-00-054-1379

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1N78FMR

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000541379

NSN

5961-00-054-1379

MFG

M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM

Description

FUNCTION FOR WHICH DESIGNED: MICROWAVE
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.220 INCHES MAXIMUM
OVERALL LENGTH: 0.750 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON

G181-638-0014

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000541379

NSN

5961-00-054-1379

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G181-638-0014

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000541379

NSN

5961-00-054-1379

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

FUNCTION FOR WHICH DESIGNED: MICROWAVE
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.220 INCHES MAXIMUM
OVERALL LENGTH: 0.750 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON

312C202H03

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961000542194

NSN

5961-00-054-2194

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312C202H03

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961000542194

NSN

5961-00-054-2194

MFG

WESTINGHOUSE ELECTRIC CORP

Description

CIRCUIT CONNECTION STYLE DESIGNATOR: 3 DOUBLER 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: BRACKET
OVERALL HEIGHT: 7.000 INCHES NOMINAL
OVERALL LENGTH: 6.380 INCHES NOMINAL
OVERALL WIDTH: 7.000 INCHES NOMINAL

7D403H1X2

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961000542194

NSN

5961-00-054-2194

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7D403H1X2

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961000542194

NSN

5961-00-054-2194

MFG

FAIRCHILD INDUSTRIAL PRODUCTS COMPANY

Description

CIRCUIT CONNECTION STYLE DESIGNATOR: 3 DOUBLER 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: BRACKET
OVERALL HEIGHT: 7.000 INCHES NOMINAL
OVERALL LENGTH: 6.380 INCHES NOMINAL
OVERALL WIDTH: 7.000 INCHES NOMINAL

127069

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000543033

NSN

5961-00-054-3033

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127069

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000543033

NSN

5961-00-054-3033

MFG

ITT CORPORATION DBA ITT GILFILLAN

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 1.250 INCHES NOMINAL
OVERALL LENGTH: 7.625 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 18.0 WATTS MAXIMUM FORWARD POWER DISSIPATION, AVERAGE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 24930-127069 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -18.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 18.0 MAXIMUM FORWARD VOLTAGE, AVERAGE

ED8217

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000543033

NSN

5961-00-054-3033

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ED8217

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000543033

NSN

5961-00-054-3033

MFG

ELECTRONIC DEVICES INC DBA E D I

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 1.250 INCHES NOMINAL
OVERALL LENGTH: 7.625 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 18.0 WATTS MAXIMUM FORWARD POWER DISSIPATION, AVERAGE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 24930-127069 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -18.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 18.0 MAXIMUM FORWARD VOLTAGE, AVERAGE

1N4437-1

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961000543263

NSN

5961-00-054-3263

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1N4437-1

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961000543263

NSN

5961-00-054-3263

MFG

L-3 COMMUNICATIONS CORPORATION DBA L 3 COMMUNICATIONS CORPORATION EOS DIVISION

Description

CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -65.0 TO 160.0 DEG CELSIUS
OVERALL HEIGHT: 0.400 INCHES NOMINAL
OVERALL LENGTH: 1.530 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 INSULATED WIRE LEAD W/TERMINAL LUG