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5961-00-342-3667
20 Products
150-0404
TRANSISTOR
NSN, MFG P/N
5961003423667
NSN
5961-00-342-3667
MFG
AUTEK SYSTEMS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 800.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE5200 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 50.0 MAXIMUM BREAKDOWN VOL
Related Searches:
306142
TRANSISTOR
NSN, MFG P/N
5961003422144
NSN
5961-00-342-2144
MFG
FLUKE CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: FIELD EFFECT
OVERALL DIAMETER: 0.208 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL HEIGHT: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
Related Searches:
3N173
TRANSISTOR
NSN, MFG P/N
5961003422144
NSN
5961-00-342-2144
MFG
UNION CARBIDE CORP MATERIALS SYSTEMS DIV
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: FIELD EFFECT
OVERALL DIAMETER: 0.208 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL HEIGHT: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
Related Searches:
ITS30762
TRANSISTOR
NSN, MFG P/N
5961003422144
NSN
5961-00-342-2144
MFG
HARRIS CORP DBA GOVERNMENT COMMUNICATION SYSTEMS DIV
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: FIELD EFFECT
OVERALL DIAMETER: 0.208 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL HEIGHT: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
Related Searches:
M5141
TRANSISTOR
NSN, MFG P/N
5961003422144
NSN
5961-00-342-2144
MFG
SV MICROWAVE INC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: FIELD EFFECT
OVERALL DIAMETER: 0.208 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL HEIGHT: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
Related Searches:
1N5305
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003422231
NSN
5961-00-342-2231
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1N5305A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003422231
NSN
5961-00-342-2231
MFG
ADELCO ELEKTRONIK GMBH
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
932140-15
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003422231
NSN
5961-00-342-2231
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
2015035-1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003422240
NSN
5961-00-342-2240
2015035-1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003422240
NSN
5961-00-342-2240
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - TORRANCE
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 70210
MFR SOURCE CONTROLLING REFERENCE: 2015035-1
OVERALL HEIGHT: 0.330 INCHES MINIMUM AND 0.505 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.544 INCHES MINIMUM AND 0.562 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
Related Searches:
C140BX138
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003422240
NSN
5961-00-342-2240
C140BX138
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003422240
NSN
5961-00-342-2240
MFG
POWEREX INC
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 70210
MFR SOURCE CONTROLLING REFERENCE: 2015035-1
OVERALL HEIGHT: 0.330 INCHES MINIMUM AND 0.505 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.544 INCHES MINIMUM AND 0.562 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
Related Searches:
1902-0031
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961003422520
NSN
5961-00-342-2520
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CRITICALITY CODE JUSTIFICATION: FEAT
SPECIAL FEATURES: ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE ELECTRONICS SUPPLY CENTER PRODUCTION STANDARD NO. L01501; FOR NAVY NUCLEAR PROPULSION PLANT PRODUCTS ONLY
Related Searches:
L01501
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961003422520
NSN
5961-00-342-2520
MFG
DLA LAND AND MARITIME
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CRITICALITY CODE JUSTIFICATION: FEAT
SPECIAL FEATURES: ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE ELECTRONICS SUPPLY CENTER PRODUCTION STANDARD NO. L01501; FOR NAVY NUCLEAR PROPULSION PLANT PRODUCTS ONLY
Related Searches:
40680
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003423071
NSN
5961-00-342-3071
MFG
INTERSIL CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 35.00 AMPERES MAXIMUM DRAIN CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.673 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.557 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKOVER VOLTAGE, DC
Related Searches:
600753-01
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003423071
NSN
5961-00-342-3071
600753-01
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003423071
NSN
5961-00-342-3071
MFG
EDO
Description
CURRENT RATING PER CHARACTERISTIC: 35.00 AMPERES MAXIMUM DRAIN CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.673 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.557 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKOVER VOLTAGE, DC
Related Searches:
S6420A
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003423071
NSN
5961-00-342-3071
S6420A
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003423071
NSN
5961-00-342-3071
MFG
ADVANCED SEMICONDUCTOR INC. DBA A S I
Description
CURRENT RATING PER CHARACTERISTIC: 35.00 AMPERES MAXIMUM DRAIN CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.673 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.557 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKOVER VOLTAGE, DC
Related Searches:
1N5555
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003423564
NSN
5961-00-342-3564
MFG
SILICON TRANSISTOR CORP SUB OF BBF INC
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.313 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.5 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
SMB653448
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003423564
NSN
5961-00-342-3564
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.313 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.5 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
150-404
TRANSISTOR
NSN, MFG P/N
5961003423667
NSN
5961-00-342-3667
MFG
SYSTRON-DONNER CORP MICROWAVE/INSTRUMENT DIV
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 800.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE5200 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 50.0 MAXIMUM BREAKDOWN VOL
Related Searches:
2N4046
TRANSISTOR
NSN, MFG P/N
5961003423667
NSN
5961-00-342-3667
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 800.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE5200 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 50.0 MAXIMUM BREAKDOWN VOL
Related Searches:
2N4047
TRANSISTOR
NSN, MFG P/N
5961003423667
NSN
5961-00-342-3667
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 800.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE5200 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 50.0 MAXIMUM BREAKDOWN VOL
