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5961-00-416-9791
20 Products
348421-1
TUNNEL DIODE ASSY
NSN, MFG P/N
5961004169791
NSN
5961-00-416-9791
MFG
L-3 COMMUNICATIONS CORPORATION DBA COMMUNICATION SYSTEMS - EAST DIVISION
Description
TUNNEL DIODE ASSY
Related Searches:
352-0695-011
TRANSISTOR
NSN, MFG P/N
5961004164897
NSN
5961-00-416-4897
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND -4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N3740
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-441
OVERALL DIAMETER: 0.620 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.340 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/441 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 U
Related Searches:
52CST319523
TRANSISTOR
NSN, MFG P/N
5961004164897
NSN
5961-00-416-4897
MFG
BOOKHAM TECHNOLOGY PLC
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND -4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N3740
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-441
OVERALL DIAMETER: 0.620 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.340 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/441 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 U
Related Searches:
JANTX2N3740
TRANSISTOR
NSN, MFG P/N
5961004164897
NSN
5961-00-416-4897
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND -4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N3740
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-441
OVERALL DIAMETER: 0.620 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.340 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/441 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 U
Related Searches:
JANTX2N3740A
TRANSISTOR
NSN, MFG P/N
5961004164897
NSN
5961-00-416-4897
MFG
ADELCO ELEKTRONIK GMBH
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND -4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N3740
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-441
OVERALL DIAMETER: 0.620 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.340 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/441 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 U
Related Searches:
TX2N3740
TRANSISTOR
NSN, MFG P/N
5961004164897
NSN
5961-00-416-4897
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND -4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N3740
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-441
OVERALL DIAMETER: 0.620 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.340 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/441 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 U
Related Searches:
593B79-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004165853
NSN
5961-00-416-5853
MFG
CARDWELL CONDENSER CORP LAPOINTE-ADMIRAL DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
593B79-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004165854
NSN
5961-00-416-5854
MFG
CARDWELL CONDENSER CORP LAPOINTE-ADMIRAL DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
593C81
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004165855
NSN
5961-00-416-5855
593C81
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004165855
NSN
5961-00-416-5855
MFG
CARDWELL CONDENSER CORP LAPOINTE-ADMIRAL DIV
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
136900-1-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004166051
NSN
5961-00-416-6051
136900-1-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004166051
NSN
5961-00-416-6051
MFG
CARDWELL CONDENSER CORP LAPOINTE-ADMIRAL DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
10-22384-2
TRANSISTOR
NSN, MFG P/N
5961004169681
NSN
5961-00-416-9681
MFG
THE BOEING COMPANY DBA BOEING
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
MANUFACTURERS CODE: 81205
MFR SOURCE CONTROLLING REFERENCE: 10-22384-2
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES NOMINAL
OVERALL LENGTH: 0.260 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 450.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
2N491
TRANSISTOR
NSN, MFG P/N
5961004169681
NSN
5961-00-416-9681
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
MANUFACTURERS CODE: 81205
MFR SOURCE CONTROLLING REFERENCE: 10-22384-2
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES NOMINAL
OVERALL LENGTH: 0.260 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 450.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
535518-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004169684
NSN
5961-00-416-9684
535518-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004169684
NSN
5961-00-416-9684
MFG
RAYTHEON COMPANY
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM GATE CURRENT ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND BURN IN AND GOLD PLATED LEADS
III END ITEM IDENTIFICATION: AIRBORNE RADAR AND MISCELLANEOUS ELECTRONIC EQUIPMENT
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 50.0 MAXIMUM DRAIN TO
Related Searches:
STBE2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004169746
NSN
5961-00-416-9746
MFG
SEMTECH CORPORATION
Description
DESIGN CONTROL REFERENCE: STBE2
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 14099
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
1901-0674
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004169786
NSN
5961-00-416-9786
MFG
HEWLETT PACKARD CO
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.165 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
353-3718-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004169786
NSN
5961-00-416-9786
353-3718-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004169786
NSN
5961-00-416-9786
MFG
ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.165 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
3SF1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004169786
NSN
5961-00-416-9786
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.165 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
921356
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004169786
NSN
5961-00-416-9786
MFG
THALES UK LIMITED
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.165 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
AO/3513059-D4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004169786
NSN
5961-00-416-9786
AO/3513059-D4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004169786
NSN
5961-00-416-9786
MFG
BAE SYSTEMS RO DEFENCE
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.165 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
UT1350
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004169786
NSN
5961-00-416-9786
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.165 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
