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5961-01-157-8442
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1A8129-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011578442
NSN
5961-01-157-8442
1A8129-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011578442
NSN
5961-01-157-8442
MFG
GE AVIATIONS SYSTEMS LLC DBA GE AVIATION DIV ELECTRICAL POWER-POMPANO
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
JAN2N5808
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011575859
NSN
5961-01-157-5859
JAN2N5808
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011575859
NSN
5961-01-157-5859
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM HOLDING CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N5808
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/438
OVERALL LENGTH: 0.505 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.562 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/438 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM OFF-STATE VOLTAGE, RMS TOTAL
Related Searches:
4178601-59
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011575978
NSN
5961-01-157-5978
4178601-59
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011575978
NSN
5961-01-157-5978
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
COMPONENT NAME AND QUANTITY: 8 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 500.00 MILLIAMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6101
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/474
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.310 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 8134
Related Searches:
JAN1N6101
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011575978
NSN
5961-01-157-5978
JAN1N6101
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011575978
NSN
5961-01-157-5978
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
COMPONENT NAME AND QUANTITY: 8 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 500.00 MILLIAMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6101
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/474
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.310 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 8134
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10505579
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011576271
NSN
5961-01-157-6271
MFG
GENERAL DYNAMICS LAND SYSTEMS CANADA CORP
Description
SEMICONDUCTOR DEVICE,DIODE
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167.878
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011576271
NSN
5961-01-157-6271
MFG
WEBASTO THERMOSYSTEMS INC
Description
SEMICONDUCTOR DEVICE,DIODE
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C430
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011576969
NSN
5961-01-157-6969
MFG
PAYNE ENGINEERING COMPANY
Description
III END ITEM IDENTIFICATION: CONTROLLER AC STC LVP
Related Searches:
6999ED1024
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011577676
NSN
5961-01-157-7676
6999ED1024
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011577676
NSN
5961-01-157-7676
MFG
DRS POWER & CONTROL TECHNOLOGIES INC.
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 6999ED1024
MAJOR COMPONENTS: DIODE 6,HEATSINK 1,COMPONENT BOARD 6,THYRISTOR 7
MANUFACTURERS CODE: 27192
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
932485-0001
TRANSISTOR
NSN, MFG P/N
5961011578441
NSN
5961-01-157-8441
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES MAXIMUM BASE CURRENT, DC AND 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 06481-932485 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 450.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 400.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLEC
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GX04417B
TRANSISTOR
NSN, MFG P/N
5961011578441
NSN
5961-01-157-8441
MFG
SEMICOA DBA SEMICOA SEMI CONDUCTORS
Description
CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES MAXIMUM BASE CURRENT, DC AND 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 06481-932485 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 450.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 400.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLEC
Related Searches:
STA6272
TRANSISTOR
NSN, MFG P/N
5961011578441
NSN
5961-01-157-8441
MFG
SILICON TRANSISTOR CORP SUB OF BBF INC
Description
CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES MAXIMUM BASE CURRENT, DC AND 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 06481-932485 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 450.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 400.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLEC
Related Searches:
20-01021-001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011578442
NSN
5961-01-157-8442
20-01021-001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011578442
NSN
5961-01-157-8442
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
41-1001-08
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011578442
NSN
5961-01-157-8442
41-1001-08
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011578442
NSN
5961-01-157-8442
MFG
SIGNAL TECHNOLOGY CORPORATION
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
932455-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011578442
NSN
5961-01-157-8442
932455-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011578442
NSN
5961-01-157-8442
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
95-4239
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011578442
NSN
5961-01-157-8442
95-4239
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011578442
NSN
5961-01-157-8442
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
A3028264
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011578442
NSN
5961-01-157-8442
A3028264
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011578442
NSN
5961-01-157-8442
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
D8352
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011578442
NSN
5961-01-157-8442
MFG
MICROSEMI CORP-COLORADO
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
MBR3045CT
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011578442
NSN
5961-01-157-8442
MBR3045CT
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011578442
NSN
5961-01-157-8442
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
SD-24A
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011578442
NSN
5961-01-157-8442
SD-24A
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011578442
NSN
5961-01-157-8442
MFG
OPTEK TECHNOLOGY INC
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
SD241
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011578442
NSN
5961-01-157-8442
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
SEMICONDUCTOR DEVICES,UNITIZED
