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5961-00-528-2735
20 Products
387AS524
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961005282735
NSN
5961-00-528-2735
387AS524
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961005282735
NSN
5961-00-528-2735
MFG
NAVAL AIR SYSTEMS COMMAND
Description
DESIGN CONTROL REFERENCE: 387AS689
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 28009
OVERALL HEIGHT: 0.874 INCHES MINIMUM AND 1.030 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.049 INCHES MINIMUM AND 1.062 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
Related Searches:
SM-A-595829-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005267974
NSN
5961-00-526-7974
SM-A-595829-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005267974
NSN
5961-00-526-7974
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
FA3413U
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961005267975
NSN
5961-00-526-7975
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
COMPONENT FUNCTION RELATIONSHIP: UNMATCHED
COMPONENT NAME AND QUANTITY: 3 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 450.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, REPETITIVE, MAXIMUM PEAK TOTAL VALUE 1ST SEMICONDUCTOR DEVICE DIODE 150.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, REPETITIVE, MAXIMUM PEAK TOTAL VALUE 2ND SEMICONDUCTOR DEVICE DIODE 150.00 MILLIAMPERES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS ALL SEMICONDUCTOR DEVICE DIODE
INTERNAL CONFIGURATION: JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE
INTERNAL JUNCTION CONFIGURATION: PN ALL SEMICONDUCTOR DEVICE DIODE
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35 1ST SEMICONDUCTOR DEVICE DIODE DO-7 2ND SEMICONDUCTOR DEVICE DIODE DO-7 3RD SEMICONDUCTOR DEVICE DIODE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: TERMINAL ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETE
Related Searches:
SM-A-595820-1
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961005267975
NSN
5961-00-526-7975
SM-A-595820-1
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961005267975
NSN
5961-00-526-7975
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
COMPONENT FUNCTION RELATIONSHIP: UNMATCHED
COMPONENT NAME AND QUANTITY: 3 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 450.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, REPETITIVE, MAXIMUM PEAK TOTAL VALUE 1ST SEMICONDUCTOR DEVICE DIODE 150.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, REPETITIVE, MAXIMUM PEAK TOTAL VALUE 2ND SEMICONDUCTOR DEVICE DIODE 150.00 MILLIAMPERES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS ALL SEMICONDUCTOR DEVICE DIODE
INTERNAL CONFIGURATION: JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE
INTERNAL JUNCTION CONFIGURATION: PN ALL SEMICONDUCTOR DEVICE DIODE
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35 1ST SEMICONDUCTOR DEVICE DIODE DO-7 2ND SEMICONDUCTOR DEVICE DIODE DO-7 3RD SEMICONDUCTOR DEVICE DIODE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: TERMINAL ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETE
Related Searches:
1583770-5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005281630
NSN
5961-00-528-1630
MFG
SEMITRONICS CORP
Description
OVERALL HEIGHT: 0.500 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.683 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
Related Searches:
402A-1N1190A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005281630
NSN
5961-00-528-1630
402A-1N1190A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005281630
NSN
5961-00-528-1630
MFG
POWEREX INC
Description
OVERALL HEIGHT: 0.500 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.683 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
Related Searches:
402M1N1190A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005281630
NSN
5961-00-528-1630
402M1N1190A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005281630
NSN
5961-00-528-1630
MFG
WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV
Description
OVERALL HEIGHT: 0.500 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.683 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
Related Searches:
D468AM
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005281630
NSN
5961-00-528-1630
MFG
FMC TECHNOLOGIES INC DIV MATERIAL HANDLING SOLUTIONS
Description
OVERALL HEIGHT: 0.500 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.683 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
Related Searches:
16601946
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005281801
NSN
5961-00-528-1801
MFG
SYPRIS ELECTRONICS LLC
Description
DESIGN CONTROL REFERENCE: 16601946
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 28009
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
387AS502
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005281801
NSN
5961-00-528-1801
MFG
NAVAL AIR SYSTEMS COMMAND
Description
DESIGN CONTROL REFERENCE: 16601946
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 28009
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
387AS689
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961005282735
NSN
5961-00-528-2735
387AS689
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961005282735
NSN
5961-00-528-2735
MFG
SYPRIS ELECTRONICS LLC
Description
DESIGN CONTROL REFERENCE: 387AS689
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 28009
OVERALL HEIGHT: 0.874 INCHES MINIMUM AND 1.030 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.049 INCHES MINIMUM AND 1.062 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
Related Searches:
1N2167
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005287844
NSN
5961-00-528-7844
MFG
COMPONENTS INC SEMCOR DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
15-11095-00
TRANSISTOR
NSN, MFG P/N
5961005288190
NSN
5961-00-528-8190
MFG
COMPAQ FEDERAL LLC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 310.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5986 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.095 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
2N5638
TRANSISTOR
NSN, MFG P/N
5961005288190
NSN
5961-00-528-8190
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 310.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5986 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.095 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
P58-005762-004
TRANSISTOR
NSN, MFG P/N
5961005288190
NSN
5961-00-528-8190
MFG
THOMSON MULTIMEDIA BROADCAST SOLUTIONS INC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 310.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5986 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.095 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
10M15ZR1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005288596
NSN
5961-00-528-8596
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 170.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
10Z15DR1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005288596
NSN
5961-00-528-8596
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CURRENT RATING PER CHARACTERISTIC: 170.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
2995139
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005288596
NSN
5961-00-528-8596
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
CURRENT RATING PER CHARACTERISTIC: 170.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
6096926-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961005288682
NSN
5961-00-528-8682
6096926-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961005288682
NSN
5961-00-528-8682
MFG
LOCKHEED MARTIN CORPORATION DBA MISSION SYSTEMS & SENSORS
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: LEAD SURFACES GOLD
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.225 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 8 PIN
TRANSFER RATIO: 800.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR
VOLTAGE RATING I
Related Searches:
YY0027
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961005288682
NSN
5961-00-528-8682
YY0027
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961005288682
NSN
5961-00-528-8682
MFG
SOLITRON DEVICES INC.
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: LEAD SURFACES GOLD
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.225 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 8 PIN
TRANSFER RATIO: 800.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR
VOLTAGE RATING I
