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5961-00-115-8565

20 Products

5529A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001158565

NSN

5961-00-115-8565

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5529A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001158565

NSN

5961-00-115-8565

MFG

SYLVANIA ELECTRIC PRODUCTS INC SEMICONDUCTOR PRODUCTS DIV

M4L3052

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961001158477

NSN

5961-00-115-8477

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M4L3052

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961001158477

NSN

5961-00-115-8477

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC AND 20.00 MILLIAMPERES MAXIMUM HOLDING CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.104 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: INTERNAL JUNCTION CONFIGURATION ARRANGEMENT PNPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE5303 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM REVERSE VOLTAGE, DC AND 1.5 MAXIMUM FORWARD VOLTAGE, AVERAGE

10794-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001158479

NSN

5961-00-115-8479

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10794-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001158479

NSN

5961-00-115-8479

MFG

DRS TECHNOLOGIES CANADA COMPANY DBA DRS FLIGHT SAFETY & COMMUNICATIO NS

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5039 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REVERSE VOLTAGE, PEAK

1N4724

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001158479

NSN

5961-00-115-8479

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1N4724

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001158479

NSN

5961-00-115-8479

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5039 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REVERSE VOLTAGE, PEAK

1N4724A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001158479

NSN

5961-00-115-8479

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1N4724A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001158479

NSN

5961-00-115-8479

MFG

ADELCO ELEKTRONIK GMBH

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5039 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REVERSE VOLTAGE, PEAK

353-6471-060

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001158479

NSN

5961-00-115-8479

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353-6471-060

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001158479

NSN

5961-00-115-8479

MFG

ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5039 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REVERSE VOLTAGE, PEAK

353-6492-020

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001158480

NSN

5961-00-115-8480

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353-6492-020

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001158480

NSN

5961-00-115-8480

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC OR PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.650 INCHES NOMINAL
OVERALL LENGTH: 2.500 INCHES MINIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK

3781B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001158480

NSN

5961-00-115-8480

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3781B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001158480

NSN

5961-00-115-8480

MFG

WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC OR PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.650 INCHES NOMINAL
OVERALL LENGTH: 2.500 INCHES MINIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK

PD2749-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001158480

NSN

5961-00-115-8480

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PD2749-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001158480

NSN

5961-00-115-8480

MFG

TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC OR PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.650 INCHES NOMINAL
OVERALL LENGTH: 2.500 INCHES MINIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK

MM2711

TRANSISTOR

NSN, MFG P/N

5961001158561

NSN

5961-00-115-8561

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MM2711

TRANSISTOR

NSN, MFG P/N

5961001158561

NSN

5961-00-115-8561

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 50.00 NANOAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS CASE AND 175.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.700 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: HIGH FREQUENCY LOW POWER SILICON NPN BJT; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.209 MILLIMETERS MAXIMUM
TERMINAL LENGTH: 0.200 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN

D5529A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001158565

NSN

5961-00-115-8565

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D5529A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001158565

NSN

5961-00-115-8565

MFG

SKYWORKS SOLUTIONS INC.

479-1175-001

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961001159747

NSN

5961-00-115-9747

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479-1175-001

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961001159747

NSN

5961-00-115-9747

MFG

BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS

Description

ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
MANUFACTURERS CODE: 94756
MATERIAL: SILICON
MFR SOURCE CONTROLLING REFERENCE: 479-1175-001
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.045 INCHES NOMINAL
OVERALL LENGTH: 1.000 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 5 TAB, SOLDER LUG

SA1552

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961001159747

NSN

5961-00-115-9747

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SA1552

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961001159747

NSN

5961-00-115-9747

MFG

SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY

Description

ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
MANUFACTURERS CODE: 94756
MATERIAL: SILICON
MFR SOURCE CONTROLLING REFERENCE: 479-1175-001
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.045 INCHES NOMINAL
OVERALL LENGTH: 1.000 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 5 TAB, SOLDER LUG

472-0822-005

TRANSISTOR

NSN, MFG P/N

5961001159751

NSN

5961-00-115-9751

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472-0822-005

TRANSISTOR

NSN, MFG P/N

5961001159751

NSN

5961-00-115-9751

MFG

BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-46
MANUFACTURERS CODE: 94756
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 472-0822-005
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.085 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 1.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTER

NS3602

TRANSISTOR

NSN, MFG P/N

5961001159751

NSN

5961-00-115-9751

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NS3602

TRANSISTOR

NSN, MFG P/N

5961001159751

NSN

5961-00-115-9751

MFG

NATIONAL SEMICONDUCTOR CORP

Description

CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-46
MANUFACTURERS CODE: 94756
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 472-0822-005
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.085 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 1.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTER

SWB7596

TRANSISTOR

NSN, MFG P/N

5961001159751

NSN

5961-00-115-9751

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SWB7596

TRANSISTOR

NSN, MFG P/N

5961001159751

NSN

5961-00-115-9751

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-46
MANUFACTURERS CODE: 94756
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 472-0822-005
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.085 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 1.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTER

1563098-2

TRANSISTOR

NSN, MFG P/N

5961001160898

NSN

5961-00-116-0898

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1563098-2

TRANSISTOR

NSN, MFG P/N

5961001160898

NSN

5961-00-116-0898

MFG

NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER

Description

ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

8210-1002

TRANSISTOR

NSN, MFG P/N

5961001160898

NSN

5961-00-116-0898

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8210-1002

TRANSISTOR

NSN, MFG P/N

5961001160898

NSN

5961-00-116-0898

MFG

GENRAD INC

Description

ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

479-0726-004

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001160927

NSN

5961-00-116-0927

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479-0726-004

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001160927

NSN

5961-00-116-0927

MFG

BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS

Description

DESIGN CONTROL REFERENCE: 479-0726-004
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 94756
OVERALL DIAMETER: 0.125 INCHES NOMINAL
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY NAVORD OD41152
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

144-033-0001

HOLDER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961001161402

NSN

5961-00-116-1402

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144-033-0001

HOLDER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961001161402

NSN

5961-00-116-1402

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DBA NORTHROP GRUMMAN SYSTEMS

Description

COAXIAL CONNECTOR SERIES DESIGNATION: ANY ACCEPTABLE
INPUT CONTACT TYPE: MALE
INPUT TERMINAL TYPE: ELECTRICAL CONTACT
OUTPUT TERMINAL TYPE: ANY ACCEPTABLE
OVERALL DIAMETER: 0.440 INCHES NOMINAL
OVERALL LENGTH: 0.750 INCHES NOMINAL