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5961-01-278-7200

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33565

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012787200

NSN

5961-01-278-7200

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33565

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012787200

NSN

5961-01-278-7200

MFG

THALES COMMUNICATIONS INC.

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 43.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
III END ITEM IDENTIFICATION: 5820-01-102-3921 DIGITAL MESSAGE DEVICE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
SPECIFICATION/STANDARD DATA: 56996-B4024724 MANUFACTURERS SPECIFICATION CONTROL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.1 NOMINAL NOMINAL REGULA

0N407763-2

TRANSISTOR

NSN, MFG P/N

5961012785865

NSN

5961-01-278-5865

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0N407763-2

TRANSISTOR

NSN, MFG P/N

5961012785865

NSN

5961-01-278-5865

MFG

NATIONAL SECURITY AGENCY

0N404066-1

TRANSISTOR

NSN, MFG P/N

5961012785866

NSN

5961-01-278-5866

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0N404066-1

TRANSISTOR

NSN, MFG P/N

5961012785866

NSN

5961-01-278-5866

MFG

NATIONAL SECURITY AGENCY

0N407764-2

TRANSISTOR

NSN, MFG P/N

5961012785867

NSN

5961-01-278-5867

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0N407764-2

TRANSISTOR

NSN, MFG P/N

5961012785867

NSN

5961-01-278-5867

MFG

NATIONAL SECURITY AGENCY

0N407764-1

TRANSISTOR

NSN, MFG P/N

5961012785868

NSN

5961-01-278-5868

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0N407764-1

TRANSISTOR

NSN, MFG P/N

5961012785868

NSN

5961-01-278-5868

MFG

NATIONAL SECURITY AGENCY

0N404057-1

TRANSISTOR

NSN, MFG P/N

5961012785869

NSN

5961-01-278-5869

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0N404057-1

TRANSISTOR

NSN, MFG P/N

5961012785869

NSN

5961-01-278-5869

MFG

NATIONAL SECURITY AGENCY

0N407779-1

TRANSISTOR

NSN, MFG P/N

5961012785870

NSN

5961-01-278-5870

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0N407779-1

TRANSISTOR

NSN, MFG P/N

5961012785870

NSN

5961-01-278-5870

MFG

NATIONAL SECURITY AGENCY

0N407779-2

TRANSISTOR

NSN, MFG P/N

5961012785871

NSN

5961-01-278-5871

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0N407779-2

TRANSISTOR

NSN, MFG P/N

5961012785871

NSN

5961-01-278-5871

MFG

NATIONAL SECURITY AGENCY

BR-351

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961012785935

NSN

5961-01-278-5935

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BR-351

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961012785935

NSN

5961-01-278-5935

MFG

OAI ELECTRONICS INC

Description

III END ITEM IDENTIFICATION: 5820-01-126-7736 RECEIVER-TRANSMITTER,RADIO

BR-251

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961012785936

NSN

5961-01-278-5936

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BR-251

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961012785936

NSN

5961-01-278-5936

MFG

OAI ELECTRONICS INC

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 REPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A1 HALF-WAVE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: PLUG-IN TERMINAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 1.100 INCHES MAXIMUM
OVERALL LENGTH: 1.125 INCHES NOMINAL
OVERALL WIDTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG

MB251

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961012785936

NSN

5961-01-278-5936

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MB251

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961012785936

NSN

5961-01-278-5936

MFG

DIODES INC

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 REPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A1 HALF-WAVE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: PLUG-IN TERMINAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 1.100 INCHES MAXIMUM
OVERALL LENGTH: 1.125 INCHES NOMINAL
OVERALL WIDTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG

35-1110

TRANSISTOR

NSN, MFG P/N

5961012786396

NSN

5961-01-278-6396

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35-1110

TRANSISTOR

NSN, MFG P/N

5961012786396

NSN

5961-01-278-6396

MFG

DRS POWER & CONTROL TECHNOLOGIES INC.

Description

(NON-CORE DATA) DEPARTURE FROM CITED DOCUMENT: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
CRITICALITY CODE JUSTIFICATION: ZZZW
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N6437
SPEC/STD CONTROLLING DATA:

JAN2N6437

TRANSISTOR

NSN, MFG P/N

5961012786396

NSN

5961-01-278-6396

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JAN2N6437

TRANSISTOR

NSN, MFG P/N

5961012786396

NSN

5961-01-278-6396

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

(NON-CORE DATA) DEPARTURE FROM CITED DOCUMENT: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
CRITICALITY CODE JUSTIFICATION: ZZZW
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N6437
SPEC/STD CONTROLLING DATA:

490140776-9

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012786431

NSN

5961-01-278-6431

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490140776-9

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012786431

NSN

5961-01-278-6431

MFG

QUICK-SET INTERNATIONAL INC. DBA MOOG QUICKSET

SD1431

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961012787057

NSN

5961-01-278-7057

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SD1431

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961012787057

NSN

5961-01-278-7057

MFG

DEAN TECHNOLOGY INC. DBA CKE

13-1319441-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012787198

NSN

5961-01-278-7198

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13-1319441-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012787198

NSN

5961-01-278-7198

MFG

GTE GOVERNMENT SYSTEMS CORP STRATEGIC SYSTEMS DIV

1N5816

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012787198

NSN

5961-01-278-7198

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1N5816

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012787198

NSN

5961-01-278-7198

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

UTG5383

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012787198

NSN

5961-01-278-7198

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UTG5383

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012787198

NSN

5961-01-278-7198

MFG

MICRO USPD INC

B4024724

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012787200

NSN

5961-01-278-7200

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B4024724

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012787200

NSN

5961-01-278-7200

MFG

DEPARTMENT OF THE ARMY HQ UNITED STATES ARMY COMMUNICATIONS RESEARCH AND DEVELOPMENT COMMAND

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 43.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
III END ITEM IDENTIFICATION: 5820-01-102-3921 DIGITAL MESSAGE DEVICE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
SPECIFICATION/STANDARD DATA: 56996-B4024724 MANUFACTURERS SPECIFICATION CONTROL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.1 NOMINAL NOMINAL REGULA

BZX55B9V1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012787200

NSN

5961-01-278-7200

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BZX55B9V1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012787200

NSN

5961-01-278-7200

MFG

STMICROELECTRONICS INC

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 43.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
III END ITEM IDENTIFICATION: 5820-01-102-3921 DIGITAL MESSAGE DEVICE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
SPECIFICATION/STANDARD DATA: 56996-B4024724 MANUFACTURERS SPECIFICATION CONTROL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.1 NOMINAL NOMINAL REGULA